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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP4LN80K5

Name: STP4LN80K5
Brand: STMicroelectronics
SKU: STP4LN80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP4LN80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP4LN80K5.pdf

Description:: MOSFET N-CHANNEL 800V 3A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP4LN80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, delivering 800 V V_DS, 2.6 Ω R_DS(on) max at V_GS = 10 V, and 3 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (3.7 nC), Zener-protected gate, and 100% avalanche tested for ruggedness in high-energy switching circuits such as offline SMPS and industrial AC-DC converters.

For engineers reviewing the STP4LN80K5 datasheet, STP4LN80K5 pinout, STP4LN80K5 application, or STP4LN80K5 equivalent, key selection criteria include its 800 V breakdown rating, 2.1 Ω typical R_DS(on), 15 V/ns diode recovery dv/dt capability, 160 mJ single-pulse avalanche energy, and TO-220 package thermal resistance of 2.08 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical silicon architecture to minimize conduction and switching losses simultaneously. Its low FoM (R_DS(on) × Q_g = 9.6 Ω·nC) enables high power density in space-constrained 800 V applications, while Zener gate protection and 100% unclamped inductive switching (UIS) testing ensure robustness against overvoltage transients.

The device integrates an intrinsic body diode with 230 ns reverse recovery time (T_J = 25 °C) and 1.04 µC Q_rr, optimized for hard-switched topologies. Its 50 V/ns MOSFET dv/dt ruggedness rating and 12 A pulsed drain current support reliable operation under fast transient conditions in flyback, PFC, and resonant converter stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains-related surge voltages in universal-input offline converters without derating.
R_DS(on) max	2.6 Ω at V_GS = 10 V, I_D = 1 A - Enables low conduction loss at 3 A continuous current in TO-220 package.
Q_g	3.7 nC - Reduces gate drive power and enables faster switching with standard 10 V logic-level drivers.
E_AS	160 mJ - Supports reliable unclamped inductive switching up to 0.8 A avalanche current without failure.
R_thJC	2.08 °C/W - Allows 60 W total dissipation at T_C = 25 °C; critical for heatsink-limited industrial designs.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate voltage transients in high-side configurations.

Pinout & Package

STP4LN80K5 is housed in a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring appropriate insulation when mounted to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts 10 V logic-level drive; Zener-protected to ±30 V maximum.
2 (TAB/D)	Drain (case-connected)	Main high-voltage output node; thermally coupled to heatsink via isolated mounting.
3 (S)	Source	Reference node for gate drive; carries full load current and body diode return path.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) by ~30% vs prior K3/K4 generations at same voltage class, improving efficiency in 800 V PFC stages.
Ultra-low FoM (R_DS(on) × Q_g)	9.6 Ω·nC - Enables higher frequency operation without sacrificing conduction loss, extending power density limits.
Zener-protected gate	Integrated ±30 V gate-source clamp prevents ESD or overdrive damage during handling and board-level stress.
100% UIS tested	Each unit validated for single-pulse avalanche energy ≥160 mJ at T_J = 25 °C, ensuring production reliability.
Low C_oss & C_rss	11 pF C_oss, 0.3 pF C_rss - Minimizes Miller effect and improves hard-switching stability in high-frequency converters.

Applications

Industrial AC-DC Power Supplies

High-Voltage DC-DC Converters

Use Scenario: Universal-input (85–265 V_AC) offline flyback and forward converters delivering 30–100 W output.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 800 V blocking and 3 A peak currents during PWM cycles.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >88% efficiency at full load without active cooling.

Use Scenario: Isolated 400–800 V input DC-DC modules for telecom rectifiers and battery charging systems.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge or LLC resonant topologies operating up to 200 kHz.

Use Value: 50 V/ns dv/dt ruggedness and low C_rss suppress false triggering during zero-voltage switching transitions.

Lighting Ballasts & HID Drivers

Motor Drive Inverters (Small Industrial)

Use Scenario: Electronic ballasts for high-intensity discharge (HID) lamps requiring sustained 600–800 V operation.

IC Role / Device Role / Timing Role: Half-bridge upper-leg switch managing lamp ignition surges and steady-state arc current.

Use Value: 100% avalanche-tested construction withstands repetitive 160 mJ energy pulses during lamp restrike events.

Use Scenario: Low-power (<1 kW) three-phase inverter drives for pumps, fans, and conveyors in factory automation.

IC Role / Device Role / Timing Role: Phase-leg switching device in IGBT-replacement configurations for improved efficiency at partial load.

Use Value: TO-220 package with 2.08 °C/W R_thJC supports 3 A continuous current with passive heatsinking in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP3LN80K5	Lower R_DS(on) (1.8 Ω typ.), same 800 V rating, but reduced I_D (2.5 A) and E_AS (120 mJ).	Better conduction efficiency at <2 A loads; less margin for surge current or avalanche stress.	Select when optimizing for lowest on-resistance in thermally relaxed designs with lower peak current demands.
FQP8N80C	Higher R_DS(on) (3.5 Ω max), no Zener gate protection, lower Q_g (3.2 nC), same TO-220 package.	Lower cost alternative with reduced ruggedness; not 100% UIS tested per datasheet.	Acceptable for non-critical, cost-sensitive applications where gate protection and avalanche reliability are secondary.

Compared with STP3LN80K5 and FQP8N80C, STP4LN80K5 delivers balanced performance across R_DS(on), avalanche energy, and gate protection-making it optimal for industrial-grade 800 V switching where reliability under transient stress is mandatory.

Availability

STP4LN80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage DC-DC converters, and lighting ballasts requiring stable component supply and long-term manufacturability.

Supply support for STP4LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STP4LN80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–900 V offline and industrial power conversion systems.

FAQ

Is STP4LN80K5 suitable for use in zero-voltage switching (ZVS) topologies?

Yes. Its low C_rss (0.3 pF) and 50 V/ns dv/dt ruggedness enable stable ZVS operation in LLC and phase-shifted full-bridge converters. The 230 ns body diode t_rr and 1.04 µC Q_rr support soft commutation at 2.5 A, reducing switching loss and EMI in resonant designs.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 1.9 A continuous drain current at T_C = 100 °C. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the SOA boundary at elevated ambient temperatures without exceeding 150 °C junction temperature.

Does STP4LN80K5 require external gate protection circuitry?

No. The integrated Zener diode clamps gate-source voltage to ±30 V, eliminating the need for external TVS diodes in most applications. However, a series gate resistor (4.7–10 Ω) is still recommended to dampen ringing and control switching speed.

Can STP4LN80K5 replace older STP4NK80Z or STP4NK80ZFP devices?

Yes, with design validation. STP4LN80K5 offers lower R_DS(on) (2.6 Ω vs 3.0 Ω), lower Q_g (3.7 nC vs 4.5 nC), and enhanced avalanche ruggedness (160 mJ vs 120 mJ), but shares identical TO-220 pinout and voltage rating-making it a direct upgrade for efficiency and reliability improvement.

STP4LN80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.6Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 3.7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 122 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP4LN80K5 FAQ

1.How can I place an order for STP4LN80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP4LN80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP4LN80K5 reliable?

The price and inventory of STP4LN80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP4LN80K5 is usually 5 days.

3.What payment methods are accepted for STP4LN80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP4LN80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP4LN80K5?

STP4LN80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP4LN80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP4LN80K5?

For technical support, including STP4LN80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP4LN80K5 requirements.

6.How does Aetrix verify that STP4LN80K5 is sourced from the original manufacturer or authorized distributors?

All STP4LN80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP4LN80K5 meets industry standards.

7.What is the process for return or replacement of STP4LN80K5?

All STP4LN80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP4LN80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP4LN80K5 part is unused and in its original packaging.

Return procedure for STP4LN80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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