STMicroelectronics STP4N90K5

Overview

STP4N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh™ K5 technology, rated for 900 V V_DS, 1.90 Ω typ. R_DS(on) at V_GS = 10 V and I_D = 1.5 A, with 100% avalanche tested capability and built-in Zener-protected gate. It operates in switching power supplies, PFC stages, and industrial SMPS where high efficiency and ruggedness are required.

For engineers reviewing the STP4N90K5 datasheet, STP4N90K5 pinout, STP4N90K5 application, or STP4N90K5 equivalent, key selection criteria include its 900 V breakdown voltage, ultra-low 5.3 nC total gate charge, 2.08 °C/W junction-to-case thermal resistance, Zener-protected gate (±30 V), and TO-220 package compatibility with standard heatsinking layouts.

Technical Context

This device implements a proprietary vertical MDmesh™ K5 structure to minimize conduction loss and switching losses simultaneously. Its 173 pF input capacitance, 29 pF time-related output capacitance, and 2.8 nC gate-drain charge enable fast, low-loss hard-switching up to several hundred kHz.

The integrated source-drain diode features 289 ns reverse recovery time at T_j = 25 °C and 1.56 µC Q_rr, while the 100% unclamped inductive avalanche rating of 1 A/160 mJ supports robust operation under transient overloads without external snubbers.

Key Specifications

Pinout & Package

Supplied in TO-220 package (Type A), with isolated tab (drain-connected), standard 3-pin layout, and ECOPACK® compliance. Mounting hole Ø3.8 mm, lead pitch 2.54 mm, body height 15.75 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP3NK90Z and FQP4N90C, the STP4N90K5 delivers superior power density via lower R_DS(on) × Q_g, better thermal performance (2.08 °C/W vs ≥2.5 °C/W), and guaranteed avalanche ruggedness - making it optimal for compact, high-reliability industrial and telecom power systems.

Availability

STP4N90K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, and AC-DC adapters requiring stable component supply across multi-year production cycles.

Supply support for STP4N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ K5 product line targets high-efficiency, high-voltage power conversion - specifically engineered to replace older planar MOSFETs in PFC, SMPS, and lighting ballast applications where R_DS(on), Q_g, and avalanche robustness are critical.

FAQ

Is the STP4N90K5 suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (17.9 pF) and energy-related C_o(er) (11 pF), combined with 2.8 nC Q_gd, enable reliable ZVS operation in LLC resonant converters up to 300 kHz. The 900 V rating provides sufficient margin for resonant voltage peaks in 380 V DC bus applications.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 1.9 A at T_C = 100 °C. This derating reflects thermal limitations of the TO-220 package and must be applied when heatsink temperature exceeds 75 °C in sustained operation.

Does the built-in Zener protect against both positive and negative gate transients?

Yes. The back-to-back Zener diodes provide symmetrical ±30 V clamping (V_(BR)GSO = 30 V), protecting against both positive gate overvoltage (e.g., Miller spike) and negative transients (e.g., shoot-through induced reverse bias).

Can the STP4N90K5 replace the STP4NK90Z in existing designs?

Yes, with validation. Both share TO-220 package and 900 V rating, but STP4N90K5 offers 15% lower R_DS(on) and 30% lower Q_g. Gate drive timing and snubber values may require minor adjustment due to faster switching edges and reduced Miller charge.