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STMicroelectronics STP4NB100
- Part No.:
- STP4NB100
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP4NB100.pdf
- Description:
- MOSFET N-CH 1000V 3.8A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,548
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Product details
Overview
STP4NB100 from STMicroelectronics is a high-voltage N-channel PowerMESH™ MOSFET in TO-220 package, rated for 1000 V drain-source voltage, 4 Ω typical RDS(on), and 3.8 A continuous drain current at Tc = 25 °C. It features 100% avalanche tested ruggedness, extremely high dv/dt capability (4 V/ns), and minimized gate charge (32 nC), making it suitable for high-speed switching in industrial SMPS and welding inverters.
For engineers reviewing the STP4NB100 datasheet, STP4NB100 pinout, STP4NB100 application, or STP4NB100 equivalent, key selection considerations include its 1000 V blocking rating, 4 Ω on-resistance at VGS = 10 V, 360 mJ single-pulse avalanche energy, TO-220 thermal resistance (1 °C/W), and diode reverse recovery performance (trr = 750 ns, Qrr = 5.4 µC).
Technical Context
This MOSFET employs ST's proprietary high-voltage MESH OVERLAY™ process with strip layout and edge termination, delivering lowest RDS(on) per die area and exceptional unclamped inductive switching robustness. Its gate threshold voltage (3–5 V) and transconductance (1.5–3 S) support reliable turn-on with standard 10 V gate drivers.
The device integrates a fast-recovery source-drain diode (VSD = 1.6 V at 3.8 A, trr = 750 ns) and exhibits low intrinsic capacitances (Ciss = 1400 pF, Coss = 117 pF), enabling efficient hard-switching operation up to several hundred kHz in resonant and quasi-resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1000 V - supports primary-side switching in 800 V DC bus systems without derating |
| RDS(on) | 4 Ω (typ) at VGS = 10 V - enables <3.8 A continuous conduction with ≤15 W conduction loss at Tc = 25 °C |
| ID (cont) | 3.8 A at Tc = 25 °C - defines maximum steady-state current under heatsink-cooled conditions |
| EAS | 360 mJ - quantifies single-pulse avalanche energy handling without failure, critical for inductive load snubbing |
| Qg | 32 nC - determines gate drive power requirement and switching speed with 4.7 Ω resistor |
| trr | 750 ns - limits diode commutation losses and EMI generation during hard-switched transitions |
| Rthj-case | 1 °C/W - allows junction temperature rise of 125 °C at 125 W dissipation, defining thermal design margin |
Pinout & Package
STP4NB100 uses the standard TO-220 package with three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary heat transfer path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives 10 V logic-level signal to fully enhance channel; requires <32 nC charge for full turn-on |
| Pin 2 (Drain) | High-voltage power output | Connected to 1000 V DC bus or transformer primary; electrically tied to metal tab for thermal conduction |
| Pin 3 (Source) | Power return / reference node | Serves as common return for gate drive and load current; forms ground reference for driver ICs |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees survival under unclamped inductive switching stress up to 3.8 A and 360 mJ per pulse |
| Extremely high dv/dt capability | 4 V/ns rated slope ensures immunity to false triggering during fast voltage transients in high-noise environments |
| Minimized gate charge | 32 nC total gate charge reduces driver power loss and enables faster switching with lower gate resistor values |
| Low intrinsic capacitances | Ciss = 1400 pF and Coss = 117 pF minimize capacitive switching losses and improve ZVS/ZCS transition efficiency |
| Very low RDS(on) per area | 4 Ω achieved via PowerMESH™ strip layout and edge termination-reduces conduction loss density vs. planar HV MOSFETs |
Applications
| Industrial SMPS | Welding Inverters |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters operating from 380–800 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary; operates at 50–200 kHz with hard switching. Use Value: 1000 V rating eliminates need for series stacking; 4 Ω RDS(on) keeps conduction loss below 60 W at full load. |
Use Scenario: Inverter leg switch in IGBT-assisted or all-MOSFET arc-welding power stages. IC Role / Device Role / Timing Role: Main switching element in half-bridge topology driving high-current AC output through leakage-inductance-coupled transformer. Use Value: 360 mJ avalanche energy absorbs inductive kickback during short-circuit events; 4 V/ns dv/dt tolerance prevents spurious turn-on. |
| UPS DC-AC Converters | Motor Drive Stages |
|
Use Scenario: High-side switch in three-phase inverter stage of online double-conversion UPS systems. IC Role / Device Role / Timing Role: Voltage-blocking switch in bridge arm; handles bidirectional current via integrated body diode during regeneration. Use Value: Fast 750 ns reverse recovery and low Qrr reduce commutation losses and EMI during PWM dead-time transitions. |
Use Scenario: DC link switch in high-voltage (>600 V) brushless DC motor drives for industrial pumps and compressors. IC Role / Device Role / Timing Role: High-side or low-side switching element in inverter half-bridge; subjected to repetitive unclamped inductive stress. Use Value: 100% avalanche testing ensures reliability across thousands of motor start-stop cycles without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NB100 | 5 A ID (cont), same 1000 V/4 Ω rating, higher Ptot (150 W), identical TO-220 package | Supports higher continuous current loads but requires larger heatsink due to increased power dissipation | Select when system peak current exceeds 3.8 A while retaining same voltage and thermal interface |
| FQP4N100 | 1000 V, 4 Ω RDS(on), 4 A ID (cont), TO-220, but no guaranteed avalanche rating or dv/dt spec | Lacks 100% avalanche test and specified dv/dt immunity-unsuitable for unclamped inductive switching | Acceptable only in resistive or lightly inductive loads where avalanche stress is absent |
Compared with STP4NB100, STP5NB100 offers +0.2 A current headroom with identical ruggedness, while FQP4N100 trades verified avalanche robustness for marginal current gain-making STP4NB100 the preferred choice for mission-critical industrial switching where reliability under fault conditions is non-negotiable.
Availability
STP4NB100 is available at Aetrix Electronics and suitable for industrial SMPS, welding inverters, UPS DC-AC converters, and motor drive stages requiring stable component supply and long-term lifecycle support.
Supply support for STP4NB100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STP4NB100 belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching in industrial power conversion systems demanding 1000 V blocking and repeatable avalanche survivability.
FAQ
Is STP4NB100 pin-compatible with STP4NB100FP?
Yes-both share identical pinout (Gate-Drain-Source) and mechanical footprint for TO-220 and TO-220FP packages respectively. However, STP4NB100FP has lower thermal resistance (3.12 °C/W vs. 1 °C/W) and reduced power dissipation (40 W vs. 125 W), so direct substitution requires thermal redesign and derating of continuous current.
What gate drive voltage is required for full enhancement?
A minimum VGS of 10 V is required to achieve the specified RDS(on) ≤ 4.4 Ω. The gate threshold voltage ranges from 3 V to 5 V, but operation below 8 V risks incomplete turn-on and excessive conduction loss; 12–15 V is recommended for margin against noise and temperature drift.
Can STP4NB100 replace an IGBT in a 1000 V inverter?
It can replace IGBTs in lower-power (<3 kW), higher-frequency (>50 kHz) inverters where switching loss dominates over conduction loss. Unlike IGBTs, STP4NB100 lacks minority-carrier storage, enabling faster switching and zero tail current-but its 3.8 A rating limits current-handling capability compared to similarly rated IGBTs.
Does STP4NB100 require a gate resistor for safe operation?
Yes-a gate resistor (typically 4.7–10 Ω) is mandatory to control dV/dt during turn-on/off, limit peak gate current, and prevent oscillation. The datasheet specifies switching times and gate charge using RG = 4.7 Ω; omitting it risks gate oxide damage and erratic switching behavior due to parasitic inductance.
STP4NB100 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 1000 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP4NB100 FAQ
1.How can I place an order for STP4NB100 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP4NB100 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP4NB100 reliable?
The price and inventory of STP4NB100 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP4NB100 is usually 5 days.
3.What payment methods are accepted for STP4NB100?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP4NB100 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP4NB100?
STP4NB100 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP4NB100 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP4NB100?
For technical support, including STP4NB100 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP4NB100 requirements.
6.How does Aetrix verify that STP4NB100 is sourced from the original manufacturer or authorized distributors?
All STP4NB100 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP4NB100 meets industry standards.
7.What is the process for return or replacement of STP4NB100?
All STP4NB100 units undergo pre-shipment inspection (PSI). If there is an issue with STP4NB100, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP4NB100 part is unused and in its original packaging.
Return procedure for STP4NB100:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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