Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP4NK60Z

Name: STP4NK60Z
Brand: STMicroelectronics
SKU: STP4NK60Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP4NK60Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP4NK60Z.pdf

Description:: MOSFET N-CH 600V 4A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:552

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP4NK60Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 600 V drain-source voltage, 1.7 Ω typical R_DS(on), and 4 A continuous drain current in TO-220 package. It delivers high dv/dt capability and 100% avalanche-tested ruggedness for offline SMPS, AC-DC adapters, and industrial motor control.

For engineers reviewing the STP4NK60Z datasheet, STP4NK60Z pinout, STP4NK60Z application, or STP4NK60Z equivalent, key selection criteria include its 4.5 V/ns peak diode recovery dv/dt rating, 120 mJ single-pulse avalanche energy, 1.79 °C/W junction-to-case thermal resistance, and Zener-protected gate structure for ESD robustness.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high-voltage integrity and fast switching performance. Its intrinsic capacitance (C_iss = 510 pF, C_oss = 67 pF) and low Q_g (18.8–26 nC) support efficient hard-switching in 50–100 kHz flyback and forward converters.

The integrated Zener protection clamps gate-source voltage to ±30 V, enabling direct drive from standard PWM controllers without external gate protection. Its 150 °C maximum junction temperature and 4.5 V/ns dv/dt rating make it suitable for unclamped inductive load switching where parasitic ringing and voltage overshoot are critical concerns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies without derating.
R_DS(on) typ.	1.7 Ω at V_GS = 10 V, I_D = 2 A - enables <1.7 W conduction loss at 4 A, reducing heatsink requirements.
Q_g	18.8–26 nC - low gate charge minimizes driver power loss and allows use with low-current gate drivers (e.g., UC384x family).
E_AS	120 mJ at T_J = 25 °C - ensures reliable operation under unclamped inductive switching stress (e.g., relay/snubberless triac driving).
dv/dt	4.5 V/ns - high immunity to false turn-on during fast transient events in noisy industrial environments.
R_thJC	1.79 °C/W - enables 70 W total power dissipation at T_C = 25 °C, supporting compact heatsink designs.
V_GS(th)	3.0–4.5 V - compatible with 5 V logic-level gate drive and provides margin against noise-induced turn-on.

Pinout & Package

STP4NK60Z uses the TO-220 (Type A) package with isolated tab. The metal tab is electrically connected to the drain terminal and serves as the primary heat path. Mounting requires insulating hardware unless drain is at system ground potential.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts 10 V drive for full enhancement; Zener-protected to ±30 V.
2 (D / TAB)	Drain / Heat Sink Interface	High-voltage output node; electrically tied to metal tab; must be insulated if not at ground potential.
3 (S)	Source	Power return path and reference for gate drive; connects to source of upstream switch or ground in low-side configuration.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 120 mJ single-pulse avalanche energy - eliminates need for external snubbers in inductive load switching.
SuperMESH technology	Reduces R_DS(on) by ~25% vs. prior PowerMESH generation while preserving 600 V breakdown and thermal stability.
Zener-protected gate	Integrated bidirectional Zener clamps V_GS to ±30 V - prevents gate oxide rupture during ESD events or gate driver faults.
Low C_oss & C_rss	C_oss = 67 pF, C_rss = 13 pF - reduces Miller effect, improves switching controllability, and lowers EMI in high-frequency SMPS.
High dv/dt immunity	Rated 4.5 V/ns - suppresses spurious turn-on during rapid voltage transients in bridge-leg or PFC stage applications.

Applications

AC-DC Adapter Primary Switch

Flyback SMPS Main Switch

Use Scenario: 36 W universal-input (85–265 VAC) adapter powering IoT gateways.

IC Role / Device Role / Timing Role: High-side main switch in discontinuous conduction mode (DCM) flyback topology operating at 65 kHz.

Use Value: 1.7 Ω R_DS(on) limits conduction loss to ≤1.4 W at full load, enabling natural convection cooling without fan.

Use Scenario: 65 W open-frame power supply for industrial HMIs with wide ambient temperature range (−25 to +70 °C).

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley-switching controller.

Use Value: 150 °C T_J(max) and 1.79 °C/W R_thJC ensure stable operation at 70 °C ambient without thermal throttling.

Industrial Motor Starter

AC Solid-State Relay Driver

Use Scenario: 1/4 HP single-phase induction motor starter with soft-start and overload protection.

IC Role / Device Role / Timing Role: Low-side switching element controlling motor winding current in half-wave phase-controlled drive.

Use Value: 4.5 V/ns dv/dt rating prevents false triggering from commutation spikes during zero-cross detection.

Use Scenario: Snubberless AC SSR module for HVAC zone control with 240 VAC resistive loads.

IC Role / Device Role / Timing Role: Main switching element replacing electromechanical relay; driven by optocoupler-isolated gate driver.

Use Value: Integrated Zener protection eliminates need for external gate clamp diodes, reducing BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	Same die, TO-220FP package with insulated tab; R_thJC = 5 °C/W; P_TOT = 25 W at T_C = 25 °C.	Used where electrical isolation of drain from heatsink is mandatory (e.g., floating ground systems).	Select when mechanical mounting requires non-conductive interface; trade-off is 64% lower power dissipation vs. TO-220.
IPP60R190C6	650 V, 190 mΩ, 21 A, CoolMOS™ P6; lower R_DS(on) but higher Q_g (44 nC); no integrated Zener.	Suitable for high-efficiency, high-power (>100 W) resonant topologies where gate protection is externally managed.	Choose for >100 W designs needing lower conduction loss; requires external gate protection and higher gate drive strength.

Compared with STP4NK60ZFP, the original TO-220 variant offers 2.8× higher thermal power handling; versus IPP60R190C6, it trades higher R_DS(on) for built-in gate protection and simpler drive requirements in cost-sensitive sub-100 W applications.

Availability

STP4NK60Z is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, industrial motor starters, and solid-state relay modules requiring stable component supply across long-lifecycle industrial programs.

Supply support for STP4NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP4NK60Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-reliability, cost-optimized switching in offline power conversion up to 100 W - emphasizing ruggedness, ease of drive, and thermal efficiency in TO-220 form factor.

FAQ

Is STP4NK60Z suitable for zero-voltage switching (ZVS) topologies?

No - STP4NK60Z is optimized for hard-switched applications like DCM flyback and phase-controlled motor drives. Its C_oss (67 pF) and Q_gd/Q_gs ratio are not tuned for resonant ZVS; devices like STW42NM60ND offer lower C_oss and enhanced body diode recovery for such use cases.

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of ≤4.7 Ω is recommended for turn-on to ensure adequate dV/dt control and minimize switching losses. For turn-off, a separate 10–22 Ω resistor or active pull-down is advised to prevent oscillation during Miller plateau crossing.

Does STP4NK60Z require a gate driver IC, or can it be driven directly from a microcontroller?

Direct microcontroller drive is not recommended: its V_GS(th) (3–4.5 V) overlaps with logic-high levels, risking partial turn-on and thermal runaway. A dedicated gate driver (e.g., STMicro's TD350) or at least a discrete buffer stage is required for safe, efficient operation.

How does the Zener protection affect gate drive design?

The integrated Zener clamps V_GS to ±30 V, eliminating need for external TVS diodes. However, gate drive circuits must still limit peak current during turn-on to avoid exceeding the Zener's surge rating - use series resistance ≥10 Ω with 12 V drive to keep I_G < 1 A peak.

STP4NK60Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP4NK60Z FAQ

1.How can I place an order for STP4NK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP4NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP4NK60Z reliable?

The price and inventory of STP4NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP4NK60Z is usually 5 days.

3.What payment methods are accepted for STP4NK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP4NK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP4NK60Z?

STP4NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP4NK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP4NK60Z?

For technical support, including STP4NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP4NK60Z requirements.

6.How does Aetrix verify that STP4NK60Z is sourced from the original manufacturer or authorized distributors?

All STP4NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP4NK60Z meets industry standards.

7.What is the process for return or replacement of STP4NK60Z?

All STP4NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STP4NK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP4NK60Z part is unused and in its original packaging.

Return procedure for STP4NK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…