STMicroelectronics STP4NK80Z
- Part No.:
- STP4NK80Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP4NK80Z.pdf
- Description:
- MOSFET N-CH 800V 3A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:928
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Product details
Overview
STP4NK80Z from STMicroelectronics is an N-channel 800 V, 3.5 Ω (max), 3 A Zener-protected SuperMESH™ power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, lighting ballasts, and AC-DC adapters. It features 100% avalanche tested ruggedness, 4.5 V/ns dv/dt capability, and integrated gate-source Zener clamping.
For engineers reviewing the STP4NK80Z datasheet, STP4NK80Z pinout, STP4NK80Z application, or STP4NK80Z equivalent, key selection criteria include its 800 V VDSS, 3 A continuous drain current at TC = 25°C, 1.56 °C/W Rthj-case, 22.5 nC total gate charge, and built-in ESD protection rated to 3000 V HBM.
Technical Context
The STP4NK80Z employs ST's SuperMESH™ strip-based layout to minimize RDS(on) while preserving high dv/dt immunity (4.5 V/ns) under unclamped inductive switching. Its gate-source Zener diodes (BVGSO = 30 V) provide intrinsic overvoltage protection without external components.
It delivers 190 mJ single-pulse avalanche energy (EAS) at Tj = 25°C with IAR = 3 A, and exhibits low dynamic capacitances: Ciss = 575 pF, Coss = 67 pF, and Crss = 13 pF at VDS = 25 V, enabling efficient high-frequency hard-switching operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 800 V - Withstands full mains-related transients in 400 VAC systems without breakdown. |
| RDS(on) max | 3.5 Ω @ VGS = 10 V, ID = 1.5 A - Enables low conduction loss in 3 A switching applications. |
| ID cont | 3 A @ TC = 25°C - Supports sustained output power up to ~24 W in TO-220 heatsink-limited designs. |
| EAS | 190 mJ - Absorbs inductive energy during turn-off without failure in flyback or PFC stages. |
| Qg | 22.5 nC - Determines gate drive power requirement; compatible with standard 1–2 W gate drivers. |
| dv/dt | 4.5 V/ns - Resists false triggering in noisy high-dV/dt environments like motor drives and dimmers. |
| Rthj-case | 1.56 °C/W - Enables thermal design with ≤ 125°C junction rise at 80 W dissipation (derated). |
Pinout & Package
STP4NK80Z uses a standard TO-220 package with three leads: Gate (pin 1), Drain (pin 2, tab-connected), Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Gate | Control input; requires 10 V for full enhancement; protected by integrated 30 V Zener. |
| Pin 2 (Center/Tab) | Drain | High-voltage power input; electrically tied to metal tab; requires insulating washer if heatsink grounded. |
| Pin 3 (Right) | Source | Power return path; referenced to control ground; carries full load current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated 30 V bidirectional gate-source Zener eliminates need for external clamping diodes. |
| 100% avalanche tested | Each unit validated for repetitive and non-repetitive avalanche stress per JEDEC JESD22-A115. |
| Low gate charge | 22.5 nC total charge enables fast switching with minimal driver loss at 65–100 kHz. |
| High dv/dt immunity | 4.5 V/ns rating ensures reliable operation in high-noise industrial and lighting circuits. |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards. |
Applications
| Offline AC-DC Adapters | Electronic Lighting Ballasts |
|---|---|
|
Use Scenario: Primary-side switch in 20–35 W flyback converters for universal-input (85–265 VAC) wall adapters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 65 kHz with zero-voltage switching assist. Use Value: 800 V rating allows direct connection to rectified mains without voltage dividers; 3.5 Ω RDS(on) limits conduction loss to < 320 mW at 3 A peak. |
Use Scenario: Half-bridge switch in 22–40 W fluorescent lamp electronic ballasts driving resonant LC tank. IC Role / Device Role / Timing Role: Fast-switching power transistor handling 400 V DC bus; commutates at 25–50 kHz with controlled diode recovery. Use Value: 400 ns reverse recovery time (trr) and 1520 µC Qrr reduce switching losses and EMI during zero-current crossing. |
| Industrial Motor Drives | Switched-Mode Power Supplies |
|
Use Scenario: Low-side switch in 3-phase inverter half-bridge modules for small BLDC fans and pumps. IC Role / Device Role / Timing Role: High-voltage freewheeling path during PWM dead-time; handles inductive kickback via body diode. Use Value: 1.6 V forward drop (VSD) at 3 A and 190 mJ EAS prevent latch-up and thermal runaway during fault conditions. |
Use Scenario: Main switch in 15–25 W boost PFC pre-regulator stage operating at 65 kHz. IC Role / Device Role / Timing Role: Unidirectional high-voltage switch shaping input current waveform; synchronized to line voltage zero-crossings. Use Value: 3 A continuous rating supports >0.95 PF correction at 230 VAC; low Coss (67 pF) minimizes capacitive turn-on loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK80Z | Lower VDSS (800 V same), higher RDS(on) (4.5 Ω max), lower ID (2.5 A) | Suitable for lower-power (<15 W) adapters where thermal margin is constrained | Select when gate drive capability is limited and lower conduction loss is not required. |
| FQP4N80 | Same VDSS, higher RDS(on) (4.0 Ω), no integrated Zener, lower EAS (120 mJ) | Requires external gate protection; less robust in unclamped inductive loads | Choose only in cost-sensitive, non-avalanche-critical applications with proven gate clamping. |
Compared with STP3NK80Z and FQP4N80, STP4NK80Z offers superior avalanche ruggedness (190 mJ vs. 120–150 mJ), lower on-resistance (3.5 Ω vs. 4.0–4.5 Ω), and guaranteed Zener protection-making it preferred for reliability-critical offline power stages.
Availability
STP4NK80Z is available at Aetrix Electronics and suitable for offline AC-DC adapters, electronic lighting ballasts, and industrial motor drives requiring stable component supply across long production lifecycles.
Supply support for STP4NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.
The SuperMESH™ MOSFET product line targets high-efficiency, high-reliability offline power conversion-designed specifically for 65–130 kHz SMPS topologies where ruggedness, low RDS(on), and fast switching coexist.
FAQ
Is STP4NK80Z pin-compatible with STP4NK80ZFP?
No. STP4NK80Z uses TO-220 (3-pin, vertical lead form), while STP4NK80ZFP uses TO-220FP (3-pin, insulated flange, shorter leads). Pin numbering is identical (G-D-S), but mechanical mounting, thermal interface, and creepage distances differ. PCB footprint and heatsink isolation must be redesigned for TO-220FP.
What is the maximum safe operating temperature for continuous operation?
The STP4NK80Z has a maximum junction temperature (TJ) of 150°C. For continuous operation at 3 A, case temperature must be held ≤100°C using a heatsink with Rthj-case ≤ 1.56 °C/W and ambient derating. At TC = 100°C, ID is derated to 1.89 A per datasheet Table 1.
Does STP4NK80Z require an external gate resistor?
Yes. A gate resistor (typically 4.7–22 Ω) is required to dampen ringing, limit peak gate current, and control switching speed. The datasheet specifies td(on)/tr/td(off)/tf values measured with RG = 4.7 Ω; omitting it risks oscillation, shoot-through, or gate oxide damage due to high dv/dt coupling.
Can STP4NK80Z replace STD4NK80Z in a DPAK layout?
No. STD4NK80Z uses DPAK (TO-252) surface-mount package with different pad layout, thermal path, and solder profile. STP4NK80Z is through-hole TO-220. Direct replacement would require full PCB redesign, new stencil, and requalification of thermal performance and mechanical stress.
STP4NK80Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.5 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 575 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 80W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP4NK80Z FAQ
1.How can I place an order for STP4NK80Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STP4NK80Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP4NK80Z reliable?
The price and inventory of STP4NK80Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP4NK80Z is usually 5 days.
3.What payment methods are accepted for STP4NK80Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP4NK80Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP4NK80Z?
STP4NK80Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP4NK80Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP4NK80Z?
For technical support, including STP4NK80Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP4NK80Z requirements.
6.How does Aetrix verify that STP4NK80Z is sourced from the original manufacturer or authorized distributors?
All STP4NK80Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP4NK80Z meets industry standards.
7.What is the process for return or replacement of STP4NK80Z?
All STP4NK80Z units undergo pre-shipment inspection (PSI). If there is an issue with STP4NK80Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP4NK80Z part is unused and in its original packaging.
Return procedure for STP4NK80Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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