STMicroelectronics STP4NK80ZFP

Overview

STP4NK80ZFP from STMicroelectronics is an N-channel 800 V, 3.5 Ω (max), 3 A Zener-protected SuperMESH™ power MOSFET in TO-220FP package. It delivers high dv/dt immunity (4.5 V/ns), 100% avalanche tested ruggedness (190 mJ single-pulse EAS), and integrated gate-source Zener clamping (±30 V rating, 3000 V HBM ESD). It is used in offline SMPS primary-side switching for industrial AC-DC adapters and LED drivers.

For engineers reviewing the STP4NK80ZFP datasheet, STP4NK80ZFP pinout, STP4NK80ZFP application, or STP4NK80ZFP equivalent, key selection criteria include its 800 V V_DSS, 3.5 Ω R_DS(on) at 10 V_GS, 22.5 nC total gate charge, 1.89 A continuous current at T_C = 100°C, and TO-220FP thermal resistance of 5 °C/W (junction-to-case).

Technical Context

This MOSFET employs ST's SuperMESH™ strip-based layout to minimize R_DS(on) while preserving high-voltage robustness. Its intrinsic capacitances are optimized: C_iss = 575 pF, C_oss = 67 pF, and C_rss = 13 pF at V_DS = 25 V, enabling fast switching with low EMI generation in hard-switched topologies.

The device integrates back-to-back gate-source Zener diodes (BVGSO = 30 V) for transient suppression and ESD protection, eliminating external clamping components. Its unclamped inductive switching capability is validated to 3 A repetitive avalanche current and 190 mJ single-pulse energy under defined test conditions.

Key Specifications

Pinout & Package

STP4NK80ZFP uses the TO-220FP (Full-Pak) package: insulated plastic case with internal heatsink tab, no metal tab exposure, designed for PCB-mount isolation. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with STP4NK80ZFP, STP4NK80Z offers superior thermal conduction but adds mechanical complexity, while STD4NK80Z trades thermal headroom for SMT manufacturability-making STP4NK80ZFP the balanced choice for mid-power isolated converters needing isolation-by-package.

Availability

STP4NK80ZFP is available at Aetrix Electronics and suitable for industrial AC-DC adapters, LED driver primary stages, and UPS inverter circuits requiring stable component supply across multi-year production cycles.

Supply support for STP4NK80ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The SuperMESH™ MOSFET product line targets high-voltage switching applications demanding ruggedness, low R_DS(on), and high dv/dt immunity-specifically engineered for offline SMPS, lighting ballasts, and motor control inverters.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STP4NK80ZFP supports 1.89 A continuous drain current when the case temperature is maintained at 100°C, as specified in Table 1 of the datasheet. This value reflects thermal derating from the 3 A rating at 25°C and is critical for heatsink sizing in enclosed industrial enclosures.

Does STP4NK80ZFP require an external gate resistor for safe operation?

Yes-a gate resistor (typically 4.7 Ω, per Figure 18 test circuit) is required to control switching speed, limit peak gate current, and prevent oscillation. The 22.5 nC total gate charge and low Crss make it sensitive to PCB layout parasitics; proper gate drive impedance ensures reliable turn-on/turn-off timing.

Can STP4NK80ZFP replace STP4NK80Z in existing TO-220 footprint designs?

No-STP4NK80ZFP uses TO-220FP (insulated tab), while STP4NK80Z uses standard TO-220 (exposed metal tab). Pinout is identical (G-D-S), but mechanical mounting differs: TO-220FP mounts directly to PCB without insulator, whereas TO-220 requires isolation hardware. PCB land pattern must be verified for insulation clearance.

Is the source-drain diode suitable for synchronous rectification?

No-the integrated body diode has t_rr = 400 ns and Q_rr = 1520 µC at 150°C, making it unsuitable for high-frequency synchronous rectification. It is optimized for unclamped inductive switching and freewheeling in flyback/forward converters-not for low-loss bidirectional conduction.