STMicroelectronics STP50N60DM6

Overview

STP50N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 600 V V_DS, 70 mΩ typ. R_DS(on) at V_GS = 10 V, 36 A continuous drain current at T_C = 25 °C, fast-recovery body diode (t_rr = 115 ns), and built-in Zener-protected gate. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS.

For engineers reviewing the STP50N60DM6 datasheet, STP50N60DM6 pinout, STP50N60DM6 application, or STP50N60DM6 equivalent, key selection criteria include avalanche ruggedness (E_AS = 700 mJ), dv/dt capability (100 V/ns), low Q_g (55 nC), C_oss,eq (416 pF), and integrated Zener gate protection - all critical for reliable high-frequency hard-switching and resonant converter designs.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon architecture optimized for ultra-low Q_rr (0.54 µC) and t_rr while maintaining industry-leading R_DS(on)/area. Its fast-recovery body diode enables reduced switching losses in synchronous rectification and bidirectional topologies without external diodes.

The device integrates back-to-back gate-source Zener diodes rated at ±30 V, eliminating need for external gate protection. Thermal resistance junction-to-case is 0.5 °C/W, supporting high-power operation with standard TO-220 heatsinking under continuous 36 A conduction.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected). Standard through-hole mounting; tab serves as primary heat path and electrical drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and IXFH50N60X3, STP50N60DM6 delivers superior combination of low Q_rr, integrated gate protection, and 100% avalanche rating - making it optimal for high-reliability, high-frequency bridge converters where diode recovery behavior and gate integrity directly impact system MTBF.

Availability

STP50N60DM6 is available at Aetrix Electronics and suitable for industrial SMPS, UPS inverters, ZVS phase-shift converters, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP50N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The MDmesh DM6 series was developed specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion, targeting next-generation server PSUs, telecom rectifiers, and industrial UPS systems demanding lowest possible switching and conduction losses.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP50N60DM6 supports 23 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12912 Rev 2. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries when heatsinked appropriately.

Is an external gate resistor required for reliable switching?

Yes - a gate resistor (e.g., 4.7 Ω) is recommended to control dV/dt and suppress oscillation, especially given the device's low input capacitance (C_iss = 2350 pF) and high dv/dt capability. The datasheet test circuit (Figure 13) uses RG = 4.7 Ω for switching time characterization.

Does the body diode conduct in both directions?

No - the intrinsic body diode is unidirectional (anode at source, cathode at drain) and only conducts from source to drain. It does not support reverse current flow (drain-to-source) except under avalanche conditions, which are limited by E_AS rating.

Can STP50N60DM6 replace STP55NF06L in a 60 V design?

No - STP50N60DM6 is a 600 V device with different silicon technology, gate threshold (3.25–4.75 V), and dynamic characteristics. It is not a drop-in replacement for 60 V logic-level MOSFETs like STP55NF06L; voltage rating mismatch risks catastrophic failure under normal operation.