STMicroelectronics STP50N65DM6

Overview

STP50N65DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, designed for high-efficiency bridge topologies and ZVS phase-shift converters. It delivers 650 V V_DS, 74 mΩ typical R_DS(on) at V_GS = 10 V, 33 A continuous drain current at T_C = 25 °C, and features an ultra-fast-recovery body diode with Q_rr = 0.65 µC (T_j = 25 °C) and trr = 130 ns.

For engineers reviewing the STP50N65DM6 datasheet, STP50N65DM6 pinout, STP50N65DM6 application, or STP50N65DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), low gate charge (Q_g = 52.5 nC), avalanche-rated operation (E_AS = 560 mJ), and TO-220 thermal performance (R_thj-case = 0.5 °C/W).

Technical Context

This device implements ST's MDmesh DM6 silicon architecture optimized for high-voltage switching efficiency: it integrates a Zener-protected gate structure, achieves extremely high dv/dt ruggedness (100 V/ns) under unclamped inductive load conditions, and maintains stable R_DS(on) across temperature (normalized to 1.0 at 25 °C, ~2.2 at 125 °C).

The fast-recovery body diode enables robust synchronous rectification and hard-switched bridge operation, with confirmed trr = 130 ns and Q_rr = 0.65 µC at T_j = 25 °C, and trr = 226 ns at T_j = 150 °C - critical for minimizing commutation losses in resonant and soft-switching topologies.

Key Specifications

Pinout & Package

STP50N65DM6 uses a TO-220 type A package with isolated tab (D), where the drain is connected to the metal tab for direct heatsinking. The package complies with ECOPACK environmental standards and provides mechanical robustness per ST's outline drawing 0015988_typeA_Rev_23.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with IPW65R090CFD7 and STW50N65DM6, STP50N65DM6 offers optimal balance of cost, thermal interface simplicity (TO-220 tab isolation), and proven ruggedness for 2–3 kW industrial power stages - especially where gate drive simplicity and Zener protection are prioritized over marginal R_DS(on) reduction.

Availability

STP50N65DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server & telecom power supplies, renewable energy inverters, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for STP50N65DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP50N65DM6 belongs to the MDmesh DM6 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in hard- and soft-switched topologies including phase-shift full-bridge, LLC resonant, and active clamp forward converters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP50N65DM6 supports 21 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12360 Rev 4. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries when heatsink temperature remains ≤100 °C.

Is the body diode suitable for synchronous rectification in a 100 kHz LLC resonant converter?

Yes - the body diode exhibits trr = 130 ns and Q_rr = 0.65 µC at T_j = 25 °C, and maintains trr = 226 ns at T_j = 150 °C. These values are validated for inductive-load recovery testing per Figure 15, making it viable for synchronous rectification up to 200 kHz with appropriate dead-time control.

Does STP50N65DM6 require external gate protection?

No - the device integrates Zener protection on the gate oxide, rated for ±25 V V_GS. This eliminates the need for external gate clamping diodes in most applications, provided gate drive circuitry limits peak transient voltage to within this range and avoids excessive ringing.

How does its avalanche capability compare to standard 650 V MOSFETs?

STP50N65DM6 is 100% production-tested for single-pulse avalanche energy E_AS = 560 mJ at T_j = 25 °C, significantly exceeding typical industry minimums (often 200–300 mJ). This enables reliable operation in unclamped inductive switching scenarios such as motor phase current interruption or UPS overload recovery.