STMicroelectronics STP52N25M5

Overview

STP52N25M5 from STMicroelectronics is an N-channel MDmesh™ V Power MOSFET rated for 250 V drain-source voltage, 0.055 Ω typical R_DS(on) at V_GS = 10 V and I_D = 14 A, 28 A continuous drain current at T_C = 25 °C, and housed in a TO-220 package. It delivers high dv/dt capability (15 V/ns), 100% avalanche tested performance, and is optimized for hard-switching SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP52N25M5 datasheet, STP52N25M5 pinout, STP52N25M5 application, or STP52N25M5 equivalent, key selection criteria include its low R_DS(on) × area figure of merit, unclamped inductive switching robustness (E_AS = 230 mJ), thermal resistance (R_thj-case = 1.14 °C/W), and gate charge profile (Q_g = 47 nC) for efficient high-frequency operation.

Technical Context

This MOSFET employs ST's proprietary vertical MDmesh™ V process combined with PowerMESH™ horizontal layout to achieve ultra-low on-resistance without sacrificing voltage rating or ruggedness. Its 250 V V_(BR)DSS and 15 V/ns dv/dt rating support reliable operation in fast-switching topologies with high bus voltages.

The device features fully characterized reverse recovery behavior (t_rr = 168 ns at T_J = 25 °C, Q_rr = 1.2 µC) and is 100% tested for single-pulse avalanche energy (E_AS = 230 mJ at V_DD = 50 V), enabling robust design in inductive load switching applications without external snubbers.

Key Specifications

Pinout & Package

STP52N25M5 is supplied in a standard TO-220 package (Type A), with leads formed for through-hole mounting and case connected to drain for direct heatsink coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP52N25N3 and IRFP4668PBF, STP52N25M5 offers superior avalanche ruggedness and proven TO-220 mechanical reliability for high-reliability industrial systems, while balancing conduction loss and gate drive requirements better than older-generation alternatives.

Availability

STP52N25M5 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, solar microinverters, and motor drives requiring stable component supply and long-term manufacturability.

Supply support for STP52N25M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The STP52N25M5 belongs to ST's MDmesh™ V high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power conversion in industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP52N25M5 supports 18 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Is the device suitable for use in synchronous rectification topologies?

No - the STP52N25M5 is not optimized for synchronous rectification. Its body diode exhibits t_rr = 168 ns and Q_rr = 1.2 µC at 25 °C, which is too slow and lossy for high-frequency SR applications. Dedicated low-Q_rr, logic-level MOSFETs with enhanced diode softness are recommended instead.

Does the TO-220 package have an isolated tab?

No - the metal tab of the STP52N25M5 TO-220 package is internally connected to the drain terminal. Electrical isolation from the heatsink is mandatory unless the heatsink is referenced to the same high-voltage potential, typically achieved using insulating pads and shoulder washers rated for ≥250 V working voltage.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V at I_D = 100 µA. This wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature extremes. Driving below 8 V risks incomplete turn-on and excessive R_DS(on), increasing conduction loss and thermal stress.