STMicroelectronics STP55NF06FP
- Part No.:
- STP55NF06FP
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STP55NF06FP.pdf
- Description:
- MOSFET N-CH 60V 50A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:36
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Product details
Overview
STP55NF06FP from STMicroelectronics is an N-channel 60 V, 50 A Power MOSFET in TO-220FP package, featuring 0.015 Ω RDS(on) max at VGS = 10 V, 100% avalanche tested, and exceptional dv/dt capability (7 V/ns). It serves as a primary switch in high-efficiency isolated DC-DC converters for telecom and server power supplies.
For engineers reviewing the STP55NF06FP datasheet, STP55NF06FP pinout, STP55NF06FP application, or STP55NF06FP equivalent, key selection criteria include thermal resistance (Rthj-case = 5 °C/W), gate charge (Qg = 44.5 nC), safe operating area under pulsed conditions, and insulation withstand voltage (2500 V DC).
Technical Context
This MOSFET employs ST's STripFET™ II process to minimize input capacitance (Ciss = 1300 pF) and gate charge-critical for high-frequency switching in resonant and phase-shifted full-bridge topologies. Its low RDS(on) and robust avalanche rating support hard-switched operation without snubbers in 48 V input telecom rectifiers.
The TO-220FP package provides reinforced insulation (2500 V DC) and reduced thermal resistance versus standard TO-220, enabling higher continuous current (50 A at TC = 25 °C) despite lower power dissipation (30 W) due to its isolated tab design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports 48 V nominal bus with 25% margin for transient overvoltage in telecom systems. |
| RDS(on) max | 0.015 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 50 A, critical for >95% efficiency in high-current output stages. |
| ID (cont.) | 50 A @ TC = 25 °C - Rated for high-current primary-side switching in 500–1000 W DC-DC modules. |
| EAS | 340 mJ - Withstands unclamped inductive switching events without failure, reducing need for external clamping. |
| dv/dt | 7 V/ns - Resists false turn-on during fast voltage transients in high-di/dt environments like synchronous rectification. |
| Qg | 44.5 nC - Low gate drive power requirement enables use with standard 1 A gate drivers at 300–500 kHz. |
| VISO | 2500 V DC - Meets reinforced insulation requirements for primary-to-secondary isolation in offline SMPS designs. |
Pinout & Package
STP55NF06FP uses the TO-220FP package-a variant of TO-220 with electrically isolated metal tab (no internal connection to Drain), enabling direct heatsink mounting without insulating pads while maintaining 2500 V DC isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Low-inductance source connection; referenced to PCB ground plane for stable gate control. |
| 2 (Gate) | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD-requires gate resistor and TVS protection. |
| 3 (Drain) | Main power input terminal | Connected internally to isolated tab; carries full switched current but remains galvanically separated from heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse ruggedness up to 340 mJ-eliminates need for derating in unclamped inductive loads. |
| Exceptional dv/dt immunity | 7 V/ns rating prevents spurious turn-on during fast voltage transitions in bridge-leg configurations. |
| STripFET™ II process | Reduces Ciss to 1300 pF and Qg to 44.5 nC-enabling efficient 300–600 kHz operation with minimal driver loss. |
| Isolated tab (TO-220FP) | 2500 V DC insulation allows direct heatsink mounting without thermal pad compromise on creepage/clearance. |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: Primary-side switch in 48 V input, 12 V/50 A isolated forward or half-bridge converter for telecom shelf power. IC Role / Device Role / Timing Role: High-current, hard-switched main power transistor handling 50 A peak drain current with 200 A pulsed capability. Use Value: 0.015 Ω RDS(on) limits conduction loss to ≤1.5 W at full load, directly supporting >95% system efficiency targets. | Use Scenario: High-side switch in multiphase buck-derived VRM supplying CPU core voltage (1.0–1.8 V) at up to 300 A total. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side synchronous rectification stage with fast diode recovery (trr = 75 ns). Use Value: Integrated body diode with 1.5 V forward drop and 170 nC Qrr reduces reverse recovery loss versus discrete Schottky solutions. |
| Industrial UPS Inverters | EV Onboard Chargers (OBC) |
Use Scenario: Half-bridge leg switch in 380 V DC link inverter for 3 kVA uninterruptible power supply. IC Role / Device Role / Timing Role: 60 V-rated device used in stacked configuration with active voltage balancing for medium-voltage AC output generation. Use Value: 7 V/ns dv/dt immunity ensures reliable commutation during rapid bus voltage transitions without shoot-through risk. | Use Scenario: Primary-side switch in CLLC resonant converter for 6.6 kW EV onboard charger interfacing 400 V battery pack. IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch leveraging low Coss (300 pF) and Qgd/Qgs ratio of 1.66. Use Value: Optimized charge ratio enables clean ZVS across wide load range, reducing EMI and improving light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFP4668PBF | RDS(on) = 0.014 Ω, Qg = 55 nC, TO-247 package, no isolation | Higher gate drive loss; requires insulated mounting hardware for isolation | Preferred where higher power dissipation (190 W) and lower RDS(on) outweigh isolation needs. |
| IXFH50N60P | RDS(on) = 0.022 Ω, Qg = 52 nC, TO-247, 600 V rating | Over-specified voltage rating increases cost and capacitance; unsuitable for 48 V systems needing minimal Ciss | Only suitable if future-proofing for 600 V bus or legacy design reuse is required. |
Compared with IRFP4668PBF and IXFH50N60P, STP55NF06FP uniquely balances low conduction loss, low gate charge, and built-in 2500 V isolation-making it optimal for space-constrained, safety-critical 48 V telecom and server power stages where thermal and safety compliance are non-negotiable.
Availability
STP55NF06FP is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial UPS inverters requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for STP55NF06FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
STP55NF06FP belongs to ST's STripFET™ II Power MOSFET product line-engineered specifically for high-efficiency, high-reliability switching in telecom and computing power supplies where low RDS(on), ruggedness, and isolation are mandatory.
FAQ
What is the maximum continuous drain current for STP55NF06FP at 100 °C case temperature?
The maximum continuous drain current is 35 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220FP package (Rthj-case = 5 °C/W) and must be validated against actual heatsink performance and ambient conditions.
Does STP55NF06FP require a gate driver with negative turn-off capability?
No-STP55NF06FP has a gate threshold voltage (VGS(th)) of 2–4 V and does not require negative turn-off. A standard 0–12 V gate driver with ≥1 A peak output is sufficient; however, a 10 Ω gate resistor is recommended to dampen ringing during fast switching.
Can STP55NF06FP be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (confirmed in Figure 13) enables inherent current sharing. For parallel operation, match gate resistors within ±5%, ensure symmetrical layout, and verify thermal coupling to avoid localized hot spots above 150 °C junction temperature.
Is the TO-220FP package lead-free and RoHS compliant?
Yes-STP55NF06FP is manufactured in ECOPACK®-compliant TO-220FP packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Full compliance documentation is available via ST's quality portal using device marking "P55NF06FP".
STP55NF06FP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 27.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STP55NF06FP FAQ
1.How can I place an order for STP55NF06FP through Aetrix?
Please submit a Request for Quotation (RFQ) for STP55NF06FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP55NF06FP reliable?
The price and inventory of STP55NF06FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP55NF06FP is usually 5 days.
3.What payment methods are accepted for STP55NF06FP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP55NF06FP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP55NF06FP?
STP55NF06FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP55NF06FP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP55NF06FP?
For technical support, including STP55NF06FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP55NF06FP requirements.
6.How does Aetrix verify that STP55NF06FP is sourced from the original manufacturer or authorized distributors?
All STP55NF06FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP55NF06FP meets industry standards.
7.What is the process for return or replacement of STP55NF06FP?
All STP55NF06FP units undergo pre-shipment inspection (PSI). If there is an issue with STP55NF06FP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP55NF06FP part is unused and in its original packaging.
Return procedure for STP55NF06FP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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