STMicroelectronics STP5N60M2

Overview

STP5N60M2 from STMicroelectronics is an N-channel 600 V, 1.4 Ω max, 3.5 A MDmesh™ M2 Power MOSFET in TO-220 package, designed as a high-voltage switching transistor for offline SMPS primary-side power conversion. It features 100% avalanche testing, Zener gate protection, and low gate charge (8 nC) for efficient hard-switching operation in 65–100 kHz flyback and resonant converters.

For engineers reviewing the STP5N60M2 datasheet, STP5N60M2 pinout, STP5N60M2 application, or STP5N60M2 equivalent, key selection criteria include R_DS(on) at 10 V, E_AS = 80 mJ, dv/dt ruggedness (50 V/ns), and thermal resistance (R_thj-case = 2.8 °C/W) for conduction and switching loss optimization in compact industrial power supplies.

Technical Context

This MOSFET employs ST's MDmesh™ M2 strip layout and optimized vertical structure to achieve low on-resistance while maintaining high voltage blocking capability. Its COSS profile is engineered for reduced turn-off energy, and the integrated Zener-protected gate ensures robustness against overvoltage transients during gate drive faults.

The device operates with V_GS(th) of 2–4 V and exhibits stable R_DS(on) up to 150 °C junction temperature. Its 15 V/ns diode recovery dv/dt rating and 220 ns trr at T_j = 25 °C support reliable operation in inductive load switching with fast source-drain diode recovery.

Key Specifications

Pinout & Package

STP5N60M2 uses TO-220 type A package (3-pin, through-hole), with drain connected to the metal tab for direct heatsinking. The case is electrically tied to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STD5N60M2 and STU5N60M2, STP5N60M2 offers identical electrical specs but superior thermal performance via TO-220 metal tab-making it optimal for thermally demanding, heatsink-mounted applications where airflow is limited.

Availability

STP5N60M2 is available at Aetrix Electronics and suitable for industrial flyback PSUs, LED driver primary switches, AC-DC adapters, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for STP5N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STP5N60M2 belongs to the MDmesh™ M2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in compact form factors.

FAQ

What is the maximum continuous drain current for STP5N60M2 at 100 °C case temperature?

The maximum continuous drain current is 2.2 A at T_C = 100 °C, as specified in Table 1 of DS9958 Rev 5. This derating reflects thermal limitations of the TO-220 package under sustained high-temperature operation and must be applied in thermal design calculations for ambient temperatures above 50 °C.

Does STP5N60M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STP5N60M2 includes an integral source-drain diode rated for 3.5 A continuous and 14 A pulsed current. Its reverse recovery time is 220 ns at T_j = 25 °C and 314 ns at T_j = 150 °C, with Q_rr = 1.05 µC and 1.5 µC respectively-critical for minimizing switching loss in inductive circuits.

Can STP5N60M2 be used in avalanche mode, and what is its single-pulse energy rating?

Yes, STP5N60M2 is 100% avalanche tested with a guaranteed single-pulse avalanche energy (E_AS) of 80 mJ at T_j = 25 °C, using I_AR = 0.5 A and V_DD = 50 V. This rating applies only to non-repetitive events and requires proper gate biasing and thermal management to avoid cumulative damage.

What is the gate threshold voltage range, and how does it vary with temperature?

V_GS(th) ranges from 2 V to 4 V at T_j = 25 °C, with typical value 3 V. As shown in Figure 11, it decreases linearly with rising temperature-normalized to ~0.7× nominal at T_j = 150 °C-requiring gate drive headroom ≥12 V to maintain full enhancement across the full operating range.