STMicroelectronics STP5N62K3

Overview

STP5N62K3 from STMicroelectronics is an N-channel 620 V, 1.28 Ω (typ.) MDmesh™ K3 Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 4.2 A continuous drain current at T_C = 25 °C, features built-in Zener-protected gate, and supports 12 V/ns dv/dt capability with 120 mJ single-pulse avalanche energy.

For engineers reviewing the STP5N62K3 datasheet, STP5N62K3 pinout, STP5N62K3 application, or STP5N62K3 equivalent, key selection criteria include its 620 V V_DS, low R_DS(on) of 1.28 Ω (typ.), TO-220 thermal resistance of 5 °C/W (junction-to-case), Zener-protected gate, and verified 290 ns reverse recovery time at 150 °C junction temperature.

Technical Context

This device employs ST's optimized vertical MDmesh™ K3 structure to achieve ultra-low on-resistance while maintaining robust 620 V breakdown voltage and high dv/dt immunity. Its intrinsic gate resistance is 4 Ω, and output capacitance is characterized by C_oss = 50 pF and C_oss,eq = 16.6 pF (0–496 V), enabling fast, low-loss switching in hard-switched topologies.

The integrated source-drain diode exhibits improved reverse recovery performance: t_rr = 290 ns (T_j = 25 °C) and Q_rr = 1.9 µC under 4.2 A, 100 A/µs di/dt conditions. The gate-source Zener diode is rated at ±30 V, providing ESD protection without external components.

Key Specifications

Pinout & Package

STP5N62K3 uses a standard TO-220 package with 3-pin configuration: tab-connected drain, pin 1 gate, pin 2 source, pin 3 drain (tab). The metal tab is electrically connected to the drain terminal and serves as primary heat dissipation path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP5N62K3, STP6N62K3 offers +43% current capacity in identical TO-220 packaging, while FDPF5N62NZ trades conduction efficiency for SMT compatibility and reduced gate charge-making STP5N62K3 optimal for cost-sensitive, thermally constrained through-hole designs requiring balanced switching and conduction performance.

Availability

STP5N62K3 is available at Aetrix Electronics and suitable for industrial motor drives, server PSU PFC stages, and offline flyback converters requiring stable component supply and long-term lifecycle support.

Supply support for STP5N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STP5N62K3 belongs to the MDmesh™ K3 family, engineered specifically for high-efficiency, high-reliability high-voltage switching in offline AC-DC conversion and industrial power control applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STP5N62K3 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6792 Rev 3. This derating reflects thermal limits of the TO-220 package and ensures safe operation within the -55 to +150 °C junction temperature range without exceeding R_thj-case = 5 °C/W.

Does STP5N62K3 require an external gate Zener diode?

No. STP5N62K3 integrates back-to-back gate-source Zener diodes rated at ±30 V, as confirmed in Table 8 and the Features section. This eliminates the need for external gate clamping components in standard gate driver designs, reducing BOM count and layout complexity.

How does the diode reverse recovery performance compare at elevated temperature?

At T_j = 150 °C, t_rr increases to 320 ns and Q_rr rises to 2.2 µC (Table 7), reflecting typical silicon behavior. These values remain competitive versus同类 600 V MOSFETs and are validated under ISD = 4.2 A, di/dt = 100 A/µs, and VDD = 60 V conditions.

Can STP5N62K3 be used in avalanche-mode operation?

Yes. STP5N62K3 is 100% avalanche tested with I_AR = 4.2 A and E_AS = 120 mJ (Table 3), enabling reliable unclamped inductive switching in relay drivers, solenoid controls, and flyback snubberless designs-provided pulse width remains within SOA limits and T_j does not exceed 150 °C.