STMicroelectronics STP5N80K5

Overview

STP5N80K5 from STMicroelectronics is an N-channel 800 V, 4 A high-voltage Power MOSFET in TO-220 package, featuring 1.75 Ω max R_DS(on), 5 nC total gate charge, and 100% avalanche-tested ruggedness. It delivers ultra-low FoM for high-efficiency SMPS, PFC stages, and industrial switching power supplies operating up to 150 °C junction temperature.

For engineers reviewing the STP5N80K5 datasheet, STP5N80K5 pinout, STP5N80K5 application, or STP5N80K5 equivalent, key selection criteria include its 800 V V_(BR)DSS, 2.08 °C/W R_thJC, Zener-protected gate, 165 mJ E_AS, and MDmesh K5 technology enabling superior dv/dt ruggedness (50 V/ns) and low C_oss (15 pF).

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 vertical structure to simultaneously reduce on-resistance and gate charge-achieving 1.50 Ω typ. R_DS(on) at V_GS = 10 V and 5 nC Q_g. Its Zener-protected gate withstands ±30 V V_GS, and it passes 100% unclamped inductive avalanche testing at I_AR = 1.2 A.

The device exhibits robust switching behavior with 12.7 ns t_d(on), 23 ns t_d(off), and 265 ns t_rr (T_J = 25 °C), supported by low Crss (0.3 pF) and Co(er) (12 pF). Its 4.5 V/ns diode recovery dv/dt rating ensures reliable operation in hard-switched flyback and resonant converters.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), standard 3-pin configuration. Mounting hole centered on tab; slug flatness ≤0.10 mm ensures uniform thermal contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPP50R800CP and STW20NK80Z, STP5N80K5 offers optimal balance of low Q_g and ruggedness for mid-power SMPS-delivering lower total switching loss below 100 kHz while maintaining built-in gate protection and TO-220 manufacturability.

Availability

STP5N80K5 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU PFC stages, LED driver power stages, and universal-input AC-DC adapters requiring stable component supply across multi-year production cycles.

Supply support for STP5N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP5N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in 600–900 V applications where low FoM and avalanche robustness are critical.

FAQ

Is STP5N80K5 suitable for hard-switched half-bridge topologies?

Yes-its 50 V/ns MOSFET dv/dt ruggedness rating and 100% avalanche-tested construction make it suitable for hard-switched half-bridge configurations up to 640 V bus voltage. The Zener-protected gate prevents spurious turn-on during high dV/dt transitions across the high-side switch, and the 2.08 °C/W R_thJC supports thermal management with standard TO-220 heatsinks.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 2.3 A at T_C = 100 °C, as specified in Table 1 of DS11342. This derating reflects thermal limitations-not SOA constraints-and assumes proper heatsinking to maintain case temperature at or below 100 °C. At T_C = 25 °C, ID is rated at 4 A.

Does STP5N80K5 include an integrated body diode, and what are its recovery characteristics?

Yes-it features a monolithic source-drain diode with 4 A continuous forward current rating and 16 A pulsed capability. At T_J = 25 °C, its reverse recovery time is 265 ns and Q_rr is 1.59 µC under standard test conditions (I_SD = 4 A, di/dt = 100 A/µs, V_DD = 60 V), making it suitable for quasi-resonant and soft-switched topologies.

Can STP5N80K5 replace older STP5NK80Z in existing designs?

Yes-STP5N80K5 is a direct drop-in replacement for STP5NK80Z in most applications, offering identical TO-220 pinout, same 800 V rating, and improved R_DS(on) (1.75 Ω vs. 1.8 Ω) and Q_g (5 nC vs. 70 nC). No layout or gate drive changes are required, and the Zener-protected gate adds robustness not present in the Z-series part.