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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP5N95K3

Name: STP5N95K3
Brand: STMicroelectronics
SKU: STP5N95K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP5N95K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP5N95K3.pdf

Description:: MOSFET N-CH 950V 4A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:3,664

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Product details

Overview

STP5N95K3 from STMicroelectronics is an N-channel 950 V, 3.5 Ω (max), 4 A MDmesh K3 Power MOSFET in DPAK (TO-252) package, featuring 100% avalanche tested operation, 5 V/ns dv/dt capability, and Zener-protected gate. It delivers low on-resistance and improved diode reverse recovery for high-voltage switching in offline SMPS and industrial inverters.

For engineers reviewing the STP5N95K3 datasheet, STP5N95K3 pinout, STP5N95K3 application, or STP5N95K3 equivalent, this device is selected for high-reliability 800 V-class flyback, resonant LLC, and PFC stages where ruggedness under unclamped inductive switching and fast diode recovery are critical.

Technical Context

This MOSFET employs ST's MDmesh K3 vertical structure optimized for high-voltage power conversion, integrating a Zener-protected gate to withstand ±30 V transients and enabling robust gate drive in noisy environments. Its 1.39 °C/W junction-to-case thermal resistance supports high-power density layouts with minimal heatsinking.

The device exhibits extremely low output capacitance (Coss = 38 pF typ.) and energy-related Co(er) = 15 pF, reducing switching losses during hard-switched transitions. Its 410 ns reverse recovery time (trr) at TJ = 25 °C and 17 A IRRM support efficient operation in continuous conduction mode (CCM) PFC and bridgeless topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - Withstands full mains rectified voltage (e.g., 650 V DC bus + 30% margin) in universal-input offline converters.
R_DS(on)	3.5 Ω max - Enables low conduction loss at 4 A continuous drain current, supporting >90% efficiency in 100–300 W PFC stages.
E_AS	100 mJ - Guarantees single-pulse avalanche survival under worst-case unclamped inductive switching (e.g., transformer saturation).
C_iss	460 pF - Low input capacitance reduces gate drive power and improves high-frequency switching stability.
trr	410 ns - Fast body diode recovery minimizes shoot-through risk and commutation loss in half-bridge and synchronous rectifier applications.
dv/dt	5 V/ns - High intrinsic immunity to false turn-on during high-slew-rate voltage transients in high-side configurations.
Q_g	19 nC - Enables efficient gate driving with standard 1–2 A peak gate drivers without excessive Miller plateau duration.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2) for thermal and electrical connection; thermally enhanced plastic surface-mount outline compliant with JEDEC TO-252-2 standards.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±30 V drive; Zener-protected to prevent ESD-induced failure during assembly or operation.
2 (D, Tab)	Drain (exposed metal tab)	Main high-voltage power path; electrically and thermally connected to PCB copper pour for heat dissipation and low-inductance return.
3 (S)	Source	Reference node for gate drive and current sensing; tied to source of driver IC or shunt resistor in low-side switch configuration.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for 100 mJ single-pulse avalanche energy-ensures field reliability in overvoltage fault conditions.
Extremely high dv/dt capability	5 V/ns rated slope prevents spurious turn-on during rapid V_DS transitions in high-side or bridge-leg switching.
Very low intrinsic capacitance	C_oss = 38 pF and C_rss = 1 pF minimize capacitive coupling and switching loss in high-frequency (>100 kHz) topologies.
Improved diode reverse recovery	trr = 410 ns and Q_rr = 3.5 µC reduce diode switching loss and EMI generation in discontinuous/continuous conduction mode converters.
Zener-protected gate	Integrated gate-source Zener clamps transients to ±20 V-eliminates need for external gate protection components in cost-sensitive designs.

Applications

Industrial AC-DC Power Supplies

High-Voltage DC-DC Converters

Use Scenario: Universal-input (85–265 V_AC) offline flyback and LLC resonant converters delivering 100–300 W.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 950 V blocking and 4 A peak current in primary winding drive.

Use Value: Avalanche ruggedness and 5 V/ns dv/dt rating ensure stable operation during line surges and transformer leakage spikes without snubber overhead.

Use Scenario: Isolated 400–800 V input DC-DC modules for telecom and server power distribution.

IC Role / Device Role / Timing Role: Active clamp or synchronous rectifier switch in phase-shifted full-bridge or dual-active-bridge topologies.

Use Value: Low C_oss and fast trr enable zero-voltage switching (ZVS) across wide load ranges, improving efficiency above 94%.

Motor Drive Inverters

Lighting Ballasts & LED Drivers

Use Scenario: 3-phase inverter stages in HVAC compressors and industrial pumps operating up to 690 V AC line.

IC Role / Device Role / Timing Role: Upper-leg IGBT/MOSFET replacement in 600 V+ inverter legs requiring high dV/dt immunity and low switching loss.

Use Value: Zener-protected gate and 100% avalanche test eliminate gate oxide failure risk during motor short-circuit events and regeneration transients.

Use Scenario: High-efficiency constant-current LED drivers for street lighting and industrial high-bay fixtures (input 277–480 V AC).

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) or active-clamp forward topologies driving 100–200 W LED loads.

Use Value: 3.5 Ω R_DS(on) and 19 nC Q_g balance conduction and switching losses at 65–130 kHz, enabling >92% system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF5N95K3	Fused TO-220FP package; higher R_thJA (60 °C/W vs. 50 °C/W); same die, lower thermal mass.	Better suited for lower-power (<150 W), through-hole prototyping or legacy board designs with no SMT reflow capability.	Select when mechanical mounting simplicity outweighs thermal performance and board space constraints.
STU5N95K3	IPAK (TO-251) package; identical electrical specs but smaller footprint and lower thermal resistance (R_thJC = 1.25 °C/W).	Preferred for ultra-compact, high-density power modules where PCB area is constrained and forced-air cooling is available.	Choose for space-constrained designs requiring highest thermal efficiency per mm² in automated SMT production.

Compared with STF5N95K3 and STU5N95K3, STP5N95K3 offers optimal trade-off between thermal performance (1.39 °C/W R_thJC), manufacturability (DPAK tape-and-reel), and cost-making it the default choice for volume production of mid-power industrial SMPS.

Availability

STP5N95K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage DC-DC converters, and motor drive inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for STP5N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh K3 family-engineered specifically for high-efficiency, high-reliability 600–1000 V power conversion in offline SMPS, PFC, and motor control applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP5N95K3 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6265 Rev 4. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does STP5N95K3 include integrated gate protection?

Yes-the device integrates a Zener diode between gate and source, clamping transient voltages to ±20 V. This eliminates the need for external gate protection components and enhances robustness against ESD and Miller-induced turn-on during high-dv/dt switching.

Can STP5N95K3 be used in avalanche mode for circuit protection?

Yes-every unit undergoes 100% production avalanche testing at 100 mJ (E_AS). It is qualified for repetitive or non-repetitive unclamped inductive switching events, making it suitable for designs relying on controlled avalanche for overvoltage protection.

What is the recommended PCB footprint for thermal performance?

ST recommends a minimum 1 inch² FR-4 copper area (2 oz) connected to the drain tab for optimal thermal performance. The DPAK footprint must follow Figure 22 in DS6265 Rev 4, with thermal vias under the tab to inner ground planes to achieve R_thJA ≈ 50 °C/W.

STP5N95K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP5N95K3 FAQ

1.How can I place an order for STP5N95K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP5N95K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP5N95K3 reliable?

The price and inventory of STP5N95K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP5N95K3 is usually 5 days.

3.What payment methods are accepted for STP5N95K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP5N95K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP5N95K3?

STP5N95K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP5N95K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP5N95K3?

For technical support, including STP5N95K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP5N95K3 requirements.

6.How does Aetrix verify that STP5N95K3 is sourced from the original manufacturer or authorized distributors?

All STP5N95K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP5N95K3 meets industry standards.

7.What is the process for return or replacement of STP5N95K3?

All STP5N95K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP5N95K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP5N95K3 part is unused and in its original packaging.

Return procedure for STP5N95K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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