STMicroelectronics STP5N95K5

Overview

STP5N95K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 vertical structure, delivering 950 V V_DS, 2.5 Ω max R_DS(on) at V_GS = 10 V and 3.5 A continuous drain current in DPAK (TO-252) package. It features ultra-low gate charge (12.5 nC), 100% avalanche tested capability, and Zener-protected gate for robust switching in offline SMPS and industrial HV converters.

For engineers reviewing the STP5N95K5 datasheet, STP5N95K5 pinout, STP5N95K5 application, or STP5N95K5 equivalent, key selection criteria include its 950 V breakdown voltage, 2.5 Ω on-resistance, 12.5 nC total gate charge, 1.47 °C/W junction-to-case thermal resistance, and DPAK package suitability for high-power density board layouts with forced-air or heatsink cooling.

Technical Context

This device employs ST's proprietary MDmesh K5 technology - a multi-drain vertical architecture that reduces specific on-resistance by optimizing cell pitch and epitaxial layer doping. Its 950 V V_(BR)DSS is specified at I_D = 1 mA and remains stable across temperature (±5% variation from −50 °C to 150 °C).

The MOSFET integrates a fast-recovery source-drain diode with t_rr = 330 ns (T_J = 25 °C) and Q_rr = 2.2 µC, enabling efficient hard-switched flyback and resonant topologies. Its dv/dt ruggedness of 50 V/ns (at V_DS ≤ 640 V) supports reliable operation in noisy HV environments without external snubbers.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate (G), Pin 2 = Drain (D/TAB), Pin 3 = Source (S). The metal tab is electrically connected to the drain and must be isolated from other potentials unless used as heatsink ground reference.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STF5N95K5 and STU5N95K5, STP5N95K5 offers optimal balance of surface-mount compatibility, thermal performance (1.47 °C/W), and board-area efficiency - making it the preferred choice for space-constrained, high-density HV power modules.

Availability

STP5N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED street lighting drivers, photovoltaic DC optimizers, and high-voltage battery management systems requiring stable component supply and long-term manufacturability.

Supply support for STP5N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion where 800–1000 V blocking capability and low R_DS(on) × Q_g are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP5N95K5 delivers 2.2 A continuous drain current at T_C = 100 °C, derated from its 3.5 A rating at 25 °C per the SOA curve. This value is validated by thermal testing and reflects real-world conduction capability under sustained high-temperature operation with adequate heatsinking.

Is the source-drain diode suitable for synchronous rectification?

No - the integrated body diode has t_rr = 330 ns and Q_rr = 2.2 µC at 25 °C, which is too slow for synchronous rectification above 100 kHz. It is optimized for freewheeling and clamping, not high-frequency bidirectional conduction; external Schottky or GaN FETs are required for sync-rectified topologies.

Does STP5N95K5 require a negative gate turn-off voltage?

No - the device is fully enhanced with V_GS = 10 V and has no requirement for negative turn-off bias. Its gate threshold voltage is 3–5 V (typ. 4 V), and stable operation is achieved with 0 V to +12 V gate drive; negative voltage is unnecessary and not recommended per datasheet guidelines.

Can STP5N95K5 replace older STP5NK90Z in existing designs?

Yes - STP5N95K5 offers higher V_DS (950 V vs 900 V), lower R_DS(on) (2.5 Ω vs 2.7 Ω), and reduced Q_g (12.5 nC vs 14.5 nC), with identical DPAK package and pinout. Layout changes are unnecessary, and efficiency improves by ~0.5% in 200 kHz PFC stages due to lower switching and conduction losses.