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STMicroelectronics STP5NB40
- Part No.:
- STP5NB40
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP5NB40.pdf
- Description:
- MOSFET N-CH 400V 4.7A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,071
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Product details
Overview
STP5NB40 from STMicroelectronics is an N-channel enhancement-mode PowerMesh™ MOSFET designed for high-voltage, high-speed switching in industrial power converters. It features 400 V VDSS, 1.47 Ω RDS(on) at VGS = 10 V and ID = 2.3 A, 4.7 A continuous drain current at TC = 25 °C, and 100% avalanche tested with 200 mJ single-pulse energy rating - deployed in welding DC-AC inverters and SMPS primary-side switches.
For engineers reviewing the STP5NB40 datasheet, STP5NB40 pinout, STP5NB40 application, or STP5NB40 equivalent, key selection criteria include its 4 V–5 V gate threshold voltage, low 9 pF Crss for reduced Miller effect, 14.5 nC total gate charge enabling fast turn-on, and TO-220 package thermal resistance of 1.56 °C/W for reliable conduction under sustained load.
Technical Context
This MOSFET employs ST's proprietary PowerMesh™ layout and edge termination structure to achieve low RDS(on)/area and exceptional dv/dt immunity (4 V/ns). Its 1.6 V source-drain diode forward voltage at 4.7 A and 300 ns reverse recovery time support efficient unclamped inductive switching in hard-switched topologies.
The device operates with ±30 V gate-source voltage tolerance and withstands 2500 V DC insulation between drain and isolated tab. Its safe operating area is defined up to 400 V and 4.7 A with pulse-limited avalanche capability, making it suitable for non-isolated flyback and forward converter primary switches where ruggedness outweighs ultra-low conduction loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 400 V - supports 340 V AC rectified input with 15% margin for surge handling in offline SMPS |
| RDS(on) | 1.47 Ω (typ.) - yields ~3.3 W conduction loss at 4.7 A, suitable for <100 W medium-power stages |
| ID (cont., TC=25°C) | 4.7 A - defines maximum steady-state current before thermal derating begins |
| Qg | 14.5 nC (typ.) - enables <20 ns turn-on delay with 4.7 Ω gate resistor, reducing switching loss |
| EAS | 200 mJ - allows single-event unclamped inductive switching without failure at rated current |
| Crss | 9 pF - minimizes gate-drive coupling during high dv/dt transitions, improving noise immunity |
| Tj(max) | 150 °C - sets junction temperature ceiling for SOA compliance and lifetime reliability modeling |
Pinout & Package
STP5NB40 is housed in a standard TO-220 package with isolated tab (drain-connected), featuring three leads: Gate (pin 1), Drain (pin 2, tab), Source (pin 3). The tab is electrically connected to the drain and must be insulated from heatsink unless system grounding permits direct connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring 10 V drive for full enhancement; threshold range 3–5 V enables TTL/CMOS-compatible logic-level triggering |
| Pin 2 / Tab | Drain | Main high-side power path; tab provides primary thermal conduction path to heatsink (Rthj-case = 1.56 °C/W) |
| Pin 3 | Source | Reference node for gate drive and current sensing; tied to power ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| PowerMesh™ process architecture | Delivers lowest RDS(on) per die area among 400 V ST MOSFETs, enabling smaller footprint vs. legacy planar devices |
| 100% avalanche tested | Guarantees robustness against inductive kickback in relay drivers and motor control snubbers without external protection |
| Extremely high dv/dt capability | 4 V/ns rating prevents spurious turn-on during fast transient events in high-frequency converters |
| Low intrinsic capacitances | Ciss = 405 pF, Coss = 72 pF - reduces capacitive loading on gate driver and improves efficiency above 50 kHz |
| Minimized gate charge | Qg = 14.5 nC - lowers gate drive power requirement and enables use of low-cost discrete gate drivers |
Applications
| Welding Inverter Primary Switch | Industrial SMPS High-Voltage Rail |
|---|---|
Use Scenario: DC-AC inverter stage converting 320–400 V DC bus into 10–20 kHz square wave for arc initiation and regulation. IC Role / Device Role / Timing Role: Main switching element in half-bridge topology; handles repetitive 4.7 A peak current with 300 µs pulse width. Use Value: 200 mJ EAS rating absorbs energy from transformer leakage inductance without clamping circuitry. |
Use Scenario: Primary-side switch in 60–100 W offline flyback converter powering PLC I/O modules. IC Role / Device Role / Timing Role: High-side switch operating at 65 kHz with 400 V blocking and 2.3 A average current. Use Value: 1.47 Ω RDS(on) limits conduction loss to ≤2.5 W, enabling natural convection cooling. |
| DC Motor Drive Snubber | Capacitor Discharge Circuit |
Use Scenario: Unclamped inductive switching in brushed DC motor H-bridge freewheeling path. IC Role / Device Role / Timing Role: Freewheeling diode replacement using body diode with controlled reverse recovery (trr = 300 ns). Use Value: Low Qrr = 1.6 µC reduces diode recovery loss and EMI generation during commutation. |
Use Scenario: High-energy capacitor bank discharge into electromagnetic actuator (e.g., solenoid valve). IC Role / Device Role / Timing Role: Single-pulse switch triggered by microcontroller GPIO, conducting 19 A pulsed current. Use Value: 19 A IDM rating supports >10 kA/s di/dt without bondwire fusing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NB40 | Higher ID = 6 A, same VDSS and RDS(on) = 1.4 Ω; larger die size increases Ciss to 450 pF | Better suited for higher-current SMPS (>80 W) but requires stronger gate drive due to +30% Qg | Select when thermal headroom is constrained and conduction loss dominates over switching loss. |
| IRF740 | Same VDSS = 400 V, but RDS(on) = 0.55 Ω (lower), Qg = 63 nC (much higher), no avalanche rating | Used in linear-regulated HV supplies where low RDS(on) matters more than ruggedness | Choose only if avalanche immunity is not required and gate driver can supply >60 nC per cycle. |
Compared with STP6NB40 and IRF740, STP5NB40 offers optimal balance of avalanche ruggedness, moderate gate charge, and proven field reliability in welding and industrial SMPS - making it preferred where cost, robustness, and thermal manageability are jointly prioritized.
Availability
STP5NB40 is available at Aetrix Electronics and suitable for welding inverters, industrial SMPS, DC motor drives, and capacitor discharge circuits requiring stable component supply across extended production lifecycles.
Supply support for STP5NB40 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.
STP5NB40 belongs to the PowerMesh™ MOSFET product line, engineered specifically for rugged, high-voltage industrial switching applications where avalanche capability and thermal stability are critical design requirements.
FAQ
Is STP5NB40 suitable for use in synchronous rectification?
No. STP5NB40 is not optimized for synchronous rectification due to its relatively high RDS(on) and lack of specified body diode reverse recovery parameters for bidirectional conduction. Its body diode is intended for freewheeling, not high-frequency reverse conduction. Synchronous rectifier designs require lower RDS(on), tighter VGS(th) distribution, and guaranteed low Qrr - features found in dedicated SR MOSFETs like STP16NF06L.
What is the maximum recommended gate resistor value for reliable switching?
A 4.7 Ω gate resistor is specified in the datasheet for switching time measurements and ensures stable turn-on/turn-off with minimal ringing. Values above 10 Ω increase switching losses and risk incomplete turn-on at high temperatures; values below 2.2 Ω may cause gate overshoot or driver stress. For 65 kHz operation, 4.7 Ω provides optimal trade-off between speed and EMI control.
Does STP5NB40 have a built-in ESD protection diode on the gate?
No. STP5NB40 does not integrate gate ESD protection. Its gate oxide is rated for ±30 V absolute maximum, and IGSS is specified at ±100 nA at ±30 V - indicating no internal clamping. External Zener diodes (e.g., 15 V) or RC snubbers are required in PCB layout to prevent electrostatic damage during handling or board assembly.
Can STP5NB40 replace STP5NK40Z in existing designs?
No. STP5NK40Z uses ST's newer MDmesh™ Z technology with 0.85 Ω RDS(on), lower Qg (12 nC), and improved EAS (420 mJ). STP5NB40 has higher RDS(on) and gate charge, and lacks the Z-series's enhanced dv/dt immunity. Direct replacement would increase conduction loss by ~70% and reduce switching efficiency - redesign of gate drive and thermal management is required.
STP5NB40 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- PowerMESH™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 405 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 80W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP5NB40 FAQ
1.How can I place an order for STP5NB40 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP5NB40 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP5NB40 reliable?
The price and inventory of STP5NB40 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP5NB40 is usually 5 days.
3.What payment methods are accepted for STP5NB40?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP5NB40 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP5NB40?
STP5NB40 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP5NB40 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP5NB40?
For technical support, including STP5NB40 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP5NB40 requirements.
6.How does Aetrix verify that STP5NB40 is sourced from the original manufacturer or authorized distributors?
All STP5NB40 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP5NB40 meets industry standards.
7.What is the process for return or replacement of STP5NB40?
All STP5NB40 units undergo pre-shipment inspection (PSI). If there is an issue with STP5NB40, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP5NB40 part is unused and in its original packaging.
Return procedure for STP5NB40:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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