Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP5NK52ZD

Name: STP5NK52ZD
Brand: STMicroelectronics
SKU: STP5NK52ZD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP5NK52ZD

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP5NK52ZD.pdf

Description:: MOSFET N-CH 520V 4.4A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,321

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP5NK52ZD from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 520 V drain-source voltage, 1.5 Ω max R_DS(on), and 4.4 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (15 V/ns), low gate charge (16.9 nC), and 100% avalanche-tested ruggedness for hard-switching industrial power converters.

For engineers reviewing the STP5NK52ZD datasheet, STP5NK52ZD pinout, STP5NK52ZD application, or STP5NK52ZD equivalent, key selection criteria include its TO-220 package thermal resistance (R_thJC = 1.78 °C/W), Zener-protected gate, and optimized capacitance profile (C_iss = 529 pF, C_oss = 71 pF) for EMI-sensitive flyback and SMPS designs.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dynamic ruggedness. Its Zener-protected gate structure enables ±30 V V_GS tolerance and 2.8 kV HBM ESD rating, while the 1.22 Ω typical R_DS(on) supports efficient conduction in high-voltage DC-DC stages.

The MOSFET features tightly controlled intrinsic capacitances (C_rss = 13.4 pF, C_oss,eq = 11 pF) and fast switching (t_d(off) = 23.1 ns, t_f = 15 ns) under 416 V V_DD conditions, enabling stable operation in unclamped inductive load circuits with repetitive avalanche energy up to 170 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	520 V - Supports primary-side switching in offline SMPS up to 380 V AC input with margin.
R_DS(on) max	1.5 Ω - Limits conduction loss to ≤30 W at 4.4 A, enabling TO-220 thermal performance without forced cooling.
Q_g	16.9 nC - Enables efficient gate drive with standard 1-A peak drivers and reduces switching loss in 65–100 kHz designs.
dv/dt capability	15 V/ns - Prevents spurious turn-on during fast voltage transients in bridge-leg and PFC applications.
E_AS	170 mJ - Guarantees single-pulse avalanche survival in unclamped inductive switching (e.g., relay driving, motor phase control).
V_SD	1.6 V - Low body diode forward voltage reduces reverse recovery losses in synchronous rectification or freewheeling paths.

Pinout & Package

STP5NK52ZD is housed in a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to pin 2 (Drain), providing direct heatsink mounting with minimal thermal interface resistance (R_thJC = 1.78 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; Zener-clamped to ±30 V for robustness against transients.
2 (TAB/D)	Drain	Main high-side power terminal; electrically tied to metal tab for low-inductance heatsinking and thermal path.
3 (S)	Source	Power return and reference node; forms common source configuration with gate drive referenced to this node.

Key Features

Feature	Design Value
Zener-protected gate	±30 V V_GS rating and 2.8 kV HBM ESD immunity eliminate need for external gate protection in noisy industrial environments.
100% avalanche tested	Each unit validated for repetitive avalanche stress up to I_AR = 4.4 A, ensuring reliability in inductive switching failure modes.
Minimized gate charge	Q_g = 16.9 nC enables low-power gate driver selection and reduces total switching energy in high-frequency converters.
Low intrinsic capacitance	C_iss = 529 pF and C_rss = 13.4 pF suppress Miller-induced oscillation and improve noise immunity in high-dv/dt layouts.

Applications

AC-DC Power Adapters

Industrial Motor Drives

Use Scenario: Primary-side switch in 65–100 W universal-input flyback converters.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via PWM duty cycle.

Use Value: 520 V V_DS and 1.5 Ω R_DS(on) enable compact design with >85% efficiency at full load and no derating at 265 V AC input.

Use Scenario: Half-bridge upper switch in 3-phase inverter stages for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side power switch handling 400 V DC bus with fast commutation.

Use Value: 15 V/ns dv/dt capability prevents false triggering during cross-conduction events; 170 mJ E_AS absorbs inductive kickback during fault shutdown.

LED Street Lighting Drivers

UPS Inverters

Use Scenario: Buck-boost LED driver stage regulating constant current for 40–100 W luminaires.

IC Role / Device Role / Timing Role: Main switching transistor operating at 50–80 kHz with ZVS-assisted transitions.

Use Value: Low C_oss,eq (11 pF) minimizes capacitive turn-off loss; Zener gate protection sustains long-term reliability in outdoor temperature cycling.

Use Scenario: Output H-bridge switch in line-interactive UPS delivering clean 230 V AC sine wave.

IC Role / Device Role / Timing Role: Bidirectional power switch managing battery-to-AC inversion and grid synchronization.

Use Value: 4.4 A continuous current and 100% avalanche testing ensure safe operation during grid dropout and load surges without desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60Z	600 V V_DS, 1.8 Ω R_DS(on), higher Q_g (22 nC)	Better voltage margin but higher conduction and switching loss at 4.4 A	Select when system requires >550 V breakdown headroom and can accept 15% lower efficiency.
FQP5N52	520 V V_DS, 2.2 Ω R_DS(on), no Zener gate protection, lower ESD rating (1.5 kV)	Lower cost but reduced ruggedness in EMI-heavy industrial settings	Acceptable only in non-critical consumer-grade adapters with tight BOM cost targets and filtered gate drive.

Compared with STP6NK60Z and FQP5N52, STP5NK52ZD uniquely balances 520 V rating, 1.5 Ω on-resistance, Zener gate protection, and 170 mJ avalanche energy - making it optimal for industrial SMPS where reliability under transient stress is non-negotiable.

Availability

STP5NK52ZD is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor drives, LED street lighting drivers, and UPS inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STP5NK52ZD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP5NK52ZD belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 380–450 V DC bus applications such as offline power supplies and motor control inverters.

FAQ

Is STP5NK52ZD suitable for zero-voltage switching (ZVS) topologies?

Yes. Its low C_oss (71 pF) and C_oss,eq (11 pF), combined with 1.22 Ω typical R_DS(on), enable efficient resonant turn-off in LLC and phase-shifted full-bridge converters. Measured t_d(off) = 23.1 ns and Q_gd = 8.4 nC support precise timing control required for ZVS boundary detection.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 2.7 A at T_C = 100 °C. This derating reflects thermal limits of the TO-220 package (R_thJC = 1.78 °C/W) and ensures junction temperature remains ≤150 °C under sustained conduction with adequate heatsinking.

Does STP5NK52ZD have integrated body diode recovery optimization?

Yes. Its body diode exhibits t_rr = 97.7 ns and Q_rr = 300 nC at T_J = 25 °C, with soft recovery characteristics confirmed by waveform analysis in Figure 15 of DS4341. This reduces EMI and voltage overshoot in hard-commutated freewheeling paths.

Can STP5NK52ZD replace STP5NK50Z in existing designs?

Yes, with validation. STP5NK52ZD offers identical pinout, package, and gate drive requirements, but improves V_DS from 500 V to 520 V and reduces R_DS(on) from 1.6 Ω to 1.5 Ω max. No layout or drive circuit changes are needed, though avalanche energy increases from 150 mJ to 170 mJ.

STP5NK52ZD Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 520 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 16.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 529 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP5NK52ZD FAQ

1.How can I place an order for STP5NK52ZD through Aetrix?

Please submit a Request for Quotation (RFQ) for STP5NK52ZD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP5NK52ZD reliable?

The price and inventory of STP5NK52ZD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP5NK52ZD is usually 5 days.

3.What payment methods are accepted for STP5NK52ZD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP5NK52ZD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP5NK52ZD?

STP5NK52ZD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP5NK52ZD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP5NK52ZD?

For technical support, including STP5NK52ZD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP5NK52ZD requirements.

6.How does Aetrix verify that STP5NK52ZD is sourced from the original manufacturer or authorized distributors?

All STP5NK52ZD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP5NK52ZD meets industry standards.

7.What is the process for return or replacement of STP5NK52ZD?

All STP5NK52ZD units undergo pre-shipment inspection (PSI). If there is an issue with STP5NK52ZD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP5NK52ZD part is unused and in its original packaging.

Return procedure for STP5NK52ZD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…