STMicroelectronics STP5NK60ZFP

Overview

STP5NK60ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 600 V drain-source voltage, 1.6 Ω max R_DS(on) at V_GS = 10 V and 2.5 A, and 5 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance (E_AS = 220 mJ), and low gate charge (Q_g = 26–34 nC), targeting high-efficiency flyback and resonant SMPS primary-side switching.

For engineers reviewing the STP5NK60ZFP datasheet, STP5NK60ZFP pinout, STP5NK60ZFP application, or STP5NK60ZFP equivalent, key selection criteria include its DPAK package thermal resistance (R_thJC = 1.39 °C/W), intrinsic capacitance profile (C_iss = 690 pF, C_oss = 90 pF), and Zener-protected gate enabling robust gate drive in noisy industrial power supplies.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high-voltage ruggedness and fast switching. Its Zener-protected gate structure eliminates external gate protection components in high-dv/dt environments like PFC and LLC converters.

The MOSFET features a built-in source-drain diode with t_rr = 485 ns and Q_rr = 2.7 µC, enabling efficient hard-switched operation. Its safe operating area (SOA) supports unclamped inductive switching up to I_AR = 5 A, validated per JEDEC JESD24-1.

Key Specifications

Pinout & Package

STP5NK60ZFP is housed in a DPAK (TO-252) type C3 package with exposed drain tab for thermal and electrical connection. The package meets ECOPACK environmental compliance standards and is supplied in tape-and-reel format (2500 pcs/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK60ZFP, STP5NK60Z offers better thermal dissipation but lacks integrated gate protection and requires larger footprint; FQP5N60C trades ruggedness and switching speed for lower unit cost, limiting use to non-avalanche-critical designs.

Availability

STP5NK60ZFP is available at Aetrix Electronics and suitable for industrial SMPS, LED driver power stages, UPS inverter stages, and AC motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP5NK60ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

STP5NK60ZFP belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion where avalanche ruggedness, low gate charge, and Zener-protected gate integrity are critical.

FAQ

What is the maximum gate-source voltage rating for STP5NK60ZFP?

The absolute maximum gate-source voltage (V_GS) is ±30 V, with an integrated Zener diode clamping gate-to-source transients to ±20 V. This protection eliminates the need for external gate clamping components in typical SMPS applications, provided gate drive circuitry does not exceed ±30 V under all conditions including ringing and overshoot.

Can STP5NK60ZFP be used in avalanche mode continuously?

No - STP5NK60ZFP is rated for single-pulse avalanche energy (E_AS) of 220 mJ at T_J = 25 °C, and repetitive avalanche is not characterized or guaranteed. It is designed for occasional fault handling (e.g., startup surge or output short), not sustained avalanche operation. Continuous avalanche risks junction overheating and parametric shift.

What is the recommended PCB footprint for the DPAK package?

The official recommended footprint is defined in Figure 20 of DS2857 (Rev 9), specifying a 6.1 mm × 6.6 mm pad for the exposed drain tab, with 0.85 mm wide leads and 2.286 mm pitch between G and S pins. Thermal relief vias under the tab (≥6 × 0.3 mm) are required to achieve the specified R_thJC = 1.39 °C/W performance.

How does the Zener-protected gate affect gate drive design?

The integrated gate Zener clamps transients to ±20 V, allowing simplified gate drive circuits without external TVS diodes. However, gate resistor value must still be selected to limit peak gate current during turn-on/turn-off (e.g., R_G = 4.7 Ω per datasheet test conditions) to avoid exceeding the Zener's power dissipation limit during fast switching transitions.