STMicroelectronics STP5NK80ZFP

Overview

STP5NK80ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in TO-220FP package, rated for 800 V drain-source voltage, 1.9 Ω typical R_DS(on), and 4.3 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested performance, and low gate charge (32.4 nC typ.) for robust switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STP5NK80ZFP datasheet, STP5NK80ZFP pinout, STP5NK80ZFP application, or STP5NK80ZFP equivalent, key selection criteria include its 2.5 kV insulation withstand voltage, 4.2 °C/W junction-to-case thermal resistance, 190 mJ single-pulse avalanche energy, and TO-220FP's isolated tab design for enhanced safety in high-voltage mains-connected systems.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and improve ruggedness. Its Zener-protected gate ensures ±30 V V_GS tolerance and 3.5 kV HBM ESD rating, while the integrated source-drain diode supports freewheeling with 1.6 V forward drop at 4.3 A.

The TO-220FP package features electrically isolated tab (V_ISO = 2.5 kV RMS), enabling direct heatsink mounting without insulating hardware. Its dynamic parameters - including 910 pF C_iss, 20 pF Crss, and 500 ns t_rr - are optimized for hard-switched flyback and resonant LLC topologies operating up to several hundred kHz.

Key Specifications

Pinout & Package

TO-220FP (Type B) package with electrically isolated metal tab (pin 2), non-insulated plastic body, and vertical lead orientation. Tab serves as drain connection and provides mechanical mounting surface with 2.5 kV insulation to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK80ZFP, STP5NK80Z offers superior thermal resistance but requires additional isolation hardware, while FQP8N80C trades ruggedness for lower R_DS(on) and higher current - making STP5NK80ZFP the only choice for safety-critical, high-reliability 800 V switching where gate protection and insulation integrity are mandatory.

Availability

STP5NK80ZFP is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, offline LED drivers, and EMI-compliant PFC pre-regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-certified designs.

Supply support for STP5NK80ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-voltage, high-ruggedness switching in offline power conversion, where avalanche capability, gate robustness, and package-level insulation are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP5NK80ZFP supports 2.7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS2853 Rev 5. This derating reflects thermal limitations of the TO-220FP package, which has 4.2 °C/W junction-to-case resistance - requiring careful heatsink sizing for sustained operation above 70 °C ambient.

Does the TO-220FP package provide electrical isolation between the drain tab and the heatsink?

Yes - the TO-220FP package features a fully insulated metal tab rated for 2.5 kV RMS insulation withstand voltage (V_ISO) from all three leads to an external heatsink for 1 second at 25 °C. This eliminates the need for insulating pads or sleeves in safety-critical Class I equipment.

Is the gate threshold voltage (V_GS(th)) compatible with standard 10 V logic-level drivers?

Yes - V_GS(th) is specified from 3.0 V to 4.5 V (typ. 3.75 V), ensuring full enhancement with 10 V gate drive. The device achieves 1.9 Ω R_DS(on) at V_GS = 10 V and I_D = 2.15 A, confirming reliable saturation under standard logic-level conditions.

How does the 100% avalanche testing impact reliability in real-world PFC circuits?

100% production avalanche testing verifies each unit's ability to absorb 190 mJ of unclamped inductive energy - directly addressing failure modes in boost PFC stages during overvoltage transients or sudden load removal. This eliminates infant mortality and ensures field reliability without requiring external snubbers or derating.