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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP60N55F3

Name: STP60N55F3
Brand: STMicroelectronics
SKU: STP60N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP60N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP60N55F3.pdf

Description:: MOSFET N-CH 55V 80A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:6,246

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Product details

Overview

STP60N55F3 from STMicroelectronics is an N-channel 55 V, 6.5 mΩ (typ), 80 A (T_C = 25°C), TO-220 packaged Power MOSFET using STripFET™ III technology. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters, motor drives, and industrial power supplies operating up to 175°C junction temperature.

For engineers reviewing the STP60N55F3 datasheet, STP60N55F3 pinout, STP60N55F3 application, or STP60N55F3 equivalent, key selection criteria include R_DS(on) ≤ 8.5 mΩ at V_GS = 10 V, 100% avalanche-tested ruggedness, and TO-220 thermal resistance (R_thj-case = 1.36 °C/W) enabling high-current switching without forced cooling.

Technical Context

This MOSFET employs STripFET™ III process architecture optimized for reduced specific on-resistance and enhanced safe operating area (SOA). Its gate threshold voltage (V_GS(th) = 2–4 V) supports standard 10 V gate drive, while dynamic parameters-including Q_g = 33.5 nC (typ), C_iss = 2200 pF-enable efficient hard-switching in 100 kHz–500 kHz power stages.

The integrated body diode exhibits t_rr = 47 ns (typ) and Q_rr = 87 nC (typ) under I_SD = 65 A, V_DD = 30 V, di/dt = 100 A/µs conditions, supporting synchronous rectification and freewheeling in buck and half-bridge topologies with minimal reverse recovery loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage; suitable for 48 V nominal bus systems with 20% overvoltage margin.
R_DS(on)	6.5 mΩ (typ) at V_GS = 10 V, I_D = 32 A - Enables <1 W conduction loss at 40 A continuous current, reducing heatsink requirements.
I_D (T_C = 25°C)	80 A - Continuous drain current rating at case temperature 25°C; derates to 56 A at T_C = 100°C per 0.73 W/°C slope.
E_AS	390 mJ - Single-pulse avalanche energy at T_j = 25°C, I_D = 32 A, V_DD = 25 V - Confirms robustness against inductive switching transients.
t_d(on)/t_r	20/50 ns (typ) - Fast turn-on delay and rise time with R_G = 4.7 Ω, supporting high-frequency PWM control with low switching loss.
V_ISO	2500 V RMS - Insulation withstand voltage from all three leads to heat sink (1 s, T_C = 25°C); ensures safety compliance in isolated power designs.

Pinout & Package

STP60N55F3 uses a through-hole TO-220 package with 3-pin configuration and integral metal tab (drain-connected) for direct heatsink mounting. The package meets ECOPACK® environmental standards and supports manual or wave soldering (max lead temperature = 300°C).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-impedance source terminal; connects to ground or low-side return node; electrically isolated from heatsink.
2 (Gate)	Control input for channel conduction	High-impedance MOS gate requiring <200 nA leakage current; sensitive to ESD; must be driven with ≥10 V for full enhancement.
3 (Drain)	Main power output terminal	Internally connected to metal tab; requires electrical isolation from heatsink unless system design permits common-drain topology.

Key Features

Feature	Design Value
STripFET™ III process	Reduces R_DS(on) × Q_g figure-of-merit by >30% vs. prior generation, improving efficiency in high-frequency switch-mode power supplies.
Standard threshold drive	V_GS(th) = 2–4 V enables direct interface with 3.3 V/5 V microcontrollers and gate drivers without level-shifting circuitry.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 390 mJ, ensuring field reliability in inductive load switching applications.
Enhanced SOA	Supports linear-mode operation up to 56 A at T_C = 100°C with V_DS ≤ 20 V, enabling use in hot-swap and electronic fuse circuits.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 40–60 A peak phase current at 20 kHz PWM frequency.

Use Value: Low R_DS(on) minimizes I²R losses during continuous conduction mode; avalanche rating absorbs back-EMF spikes during commutation.

Use Scenario: Primary-side switching transistor in 80+ Gold-rated 1 kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500 kHz with ZVS transition; gate charge Q_g = 33.5 nC enables low driver loss.

Use Value: Fast t_r/t_f reduces switching transition time; low C_oss improves resonant tank efficiency and light-load regulation.

Solar Microinverter DC-DC Stage

Industrial PLC Output Module

Use Scenario: Step-up DC-DC converter boosting PV panel output (30–60 V) to 400 V DC bus in distributed solar inverters.

IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in interleaved boost stage operating at 100 kHz with 50% duty cycle.

Use Value: Body diode t_rr = 47 ns limits reverse recovery loss during synchronous FET dead-time; high I_SD = 80 A supports burst-mode operation.

Use Scenario: Solid-state output switch replacing electromechanical relays in programmable logic controller (PLC) digital output modules.

IC Role / Device Role / Timing Role: Load switch controlling 24 V DC solenoids, valves, and indicator lamps with 2 A–10 A rated loads.

Use Value: V_ISO = 2500 V RMS isolates control logic from field wiring; 175°C T_j(max) ensures operation in unventilated control cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP460PBF	R_DS(on) = 270 mΩ (typ), V_DSS = 500 V, TO-247 package, higher R_DS(on) and larger footprint.	Designed for high-voltage AC-DC PFC and offline SMPS; unsuitable for 48 V bus due to excessive conduction loss.	Select only when 500 V blocking is required; avoid for low-voltage, high-current applications where STP60N55F3's 6.5 mΩ offers >4× lower loss.
IXTH80N55L2	R_DS(on) = 12 mΩ (typ), V_DSS = 55 V, TO-247 package, higher gate charge (Q_g = 120 nC), no avalanche rating.	Optimized for linear-mode operation (e.g., audio amplifiers); lacks 100% avalanche test certification.	Prefer for analog bias stability; STP60N55F3 remains superior for switching applications demanding ruggedness and low Q_g.

Compared with IRFP460PBF and IXTH80N55L2, STP60N55F3 uniquely balances ultra-low R_DS(on), industry-standard TO-220 footprint, certified avalanche capability, and gate-drive compatibility-making it optimal for cost-sensitive, high-reliability 48 V industrial switching.

Availability

STP60N55F3 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for STP60N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

STP60N55F3 belongs to the STripFET™ III Power MOSFET product line, engineered specifically for high-current, medium-voltage switching in industrial power conversion where efficiency, ruggedness, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for STP60N55F3 at 100°C case temperature?

The maximum continuous drain current is 56 A at T_C = 100°C, derived from the derating factor of 0.73 W/°C applied to the 110 W total dissipation rating at 25°C. This value assumes proper heatsinking and ambient airflow per JEDEC JESD51-2 standards.

Does STP60N55F3 require a gate resistor for safe operation?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen ringing and limit peak gate current during switching. The datasheet specifies t_d(on)/t_r measurements using R_G = 4.7 Ω; omitting it risks oscillation, shoot-through, and accelerated gate oxide degradation.

Can STP60N55F3 be used in avalanche mode intentionally?

No-it is 100% avalanche tested for ruggedness verification only, not rated for repetitive or intentional avalanche operation. Sustained avalanche stress exceeds safe operating area limits and may cause parametric drift or catastrophic failure.

Is the metal tab of the TO-220 package internally connected to a specific pin?

Yes-the metal tab is electrically connected to the drain (Pin 3). When mounted to a heatsink, the heatsink must be insulated unless the system design explicitly references the drain potential; otherwise, short-circuit or safety hazards may occur.

STP60N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP60N55F3 FAQ

1.How can I place an order for STP60N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP60N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP60N55F3 reliable?

The price and inventory of STP60N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP60N55F3 is usually 5 days.

3.What payment methods are accepted for STP60N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP60N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP60N55F3?

STP60N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP60N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP60N55F3?

For technical support, including STP60N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP60N55F3 requirements.

6.How does Aetrix verify that STP60N55F3 is sourced from the original manufacturer or authorized distributors?

All STP60N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP60N55F3 meets industry standards.

7.What is the process for return or replacement of STP60N55F3?

All STP60N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STP60N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP60N55F3 part is unused and in its original packaging.

Return procedure for STP60N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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