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STMicroelectronics STP65NF06
- Part No.:
- STP65NF06
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP65NF06.pdf
- Description:
- MOSFET N-CH 60V 60A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,309
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Product details
Overview
STP65NF06 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET designed for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 60A continuous drain current at TC = 25°C, 11.5 mΩ RDS(on) at VGS = 10V, and 60V VDSS, with rugged 390 mJ single-pulse avalanche energy rating - enabling robust operation in inductive load switching.
For engineers reviewing the STP65NF06 datasheet, STP65NF06 pinout, STP65NF06 application, or STP65NF06 equivalent, key selection criteria include its TO-220 package thermal resistance (1.36 °C/W), gate charge (54 nC), diode reverse recovery time (70 ns), and compatibility with standard-level gate drive circuits.
Technical Context
This MOSFET employs ST's STripFET™ II process with single-feature-size strip architecture, achieving high cell density for low on-resistance and improved manufacturing reproducibility. Its design emphasizes ruggedness via 100% avalanche testing and supports fast switching with 15 ns turn-on delay and 16 ns fall time under defined test conditions.
The integrated body diode exhibits 1.5 V forward voltage at 60 A and 70 ns reverse recovery time at 150°C junction temperature, making it suitable for synchronous rectification and freewheeling in hard-switched topologies where diode performance impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48V bus and automotive battery systems. |
| RDS(on) | 11.5 mΩ @ VGS = 10V - Low conduction loss enables ≤0.69 W I²R dissipation at 60 A, reducing heatsink requirements. |
| ID (cont) | 60 A @ TC = 25°C - Sustained current capability for high-power motor control and SMPS primary-side switching. |
| EAS | 390 mJ - Single-pulse avalanche energy rating confirms reliability during unclamped inductive switching events. |
| Qg | 54 nC - Total gate charge determines driver strength requirement; compatible with common gate drivers like STMicro's L638x series. |
| tr/tf | 60 ns / 16 ns - Fast switching transitions reduce switching losses and improve efficiency in 100–500 kHz power stages. |
| Tj(max) | 175 °C - Maximum junction temperature allows operation in high-ambient industrial environments with derated current. |
Pinout & Package
STP65NF06 is housed in a through-hole TO-220 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary heat path to the heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level signal to fully enhance channel; threshold voltage 2–4 V ensures reliable turn-on with standard microcontroller outputs. |
| 2 (Drain) | High-side power node | Connected to load supply rail; metal tab is electrically tied to Drain - requires isolation when mounted to grounded heatsink. |
| 3 (Source) | Return path / reference | Serves as power ground reference for gate drive; must be routed with low inductance to minimize ringing during switching. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Enables 11.5 mΩ RDS(on) in TO-220 without requiring gate drivers beyond standard logic levels. |
| 100% avalanche tested | Guarantees minimum 390 mJ unclamped inductive energy handling - eliminates need for external snubbers in many flyback and buck designs. |
| Low Qgd/Qg ratio | 20 nC / 54 nC = 0.37 - improves Miller immunity and reduces risk of spurious turn-on in high-dv/dt environments. |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for environmentally regulated production. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
|
Use Scenario: 48V input, 300W isolated forward converter operating at 250 kHz. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer to transformer; duty-cycle modulated by PWM controller. Use Value: 11.5 mΩ RDS(on) limits conduction loss to <0.7 W at full load, while 54 nC Qg enables clean 250 kHz switching with minimal driver overhead. |
Use Scenario: 24V/30A brushed motor in industrial actuator with H-bridge topology. IC Role / Device Role / Timing Role: High-side switch controlling motor voltage polarity and braking via source-follower configuration. Use Value: 60A rating supports peak stall currents; 390 mJ EAS withstands back-EMF spikes during abrupt stop commands without failure. |
| AC-DC PFC Boost Switch | Hot-Swap ORing FET |
|
Use Scenario: Active PFC stage in 1 kW server PSU with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Boost switch conducting during rising line voltage half-cycles; synchronized to AC input zero-crossings. Use Value: 70 ns trr and 150 nC Qrr minimize diode-related losses and EMI during reverse recovery in continuous conduction mode. |
Use Scenario: Redundant 12V power supply backplane with automatic failover. IC Role / Device Role / Timing Role: Low-loss ORing element placed between supply output and system bus; controlled by ideal diode controller. Use Value: 11.5 mΩ RDS(on) yields <40 mV drop at 30A, reducing power loss and thermal stress versus discrete Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44N | RDS(on) = 28 mΩ @ VGS = 10V; lower current rating (49A); higher Qg (67 nC) | Less efficient at high current; requires stronger gate driver; suitable only for ≤25A average loads | Acceptable where cost sensitivity outweighs efficiency and thermal margin requirements |
| STP60NF06 | Same package and VDSS; RDS(on) = 14 mΩ (typ); slightly lower EAS (330 mJ) | Near drop-in replacement but with ~22% higher conduction loss and reduced avalanche margin | Valid for legacy designs where STP65NF06 is obsolete; verify thermal design with 14 mΩ RDS(on) |
Compared with IRFZ44N and STP60NF06, STP65NF06 offers superior conduction efficiency, tighter thermal resistance (1.36 °C/W), and higher avalanche robustness - making it preferred for high-reliability 40–60A switching applications where thermal headroom and fault tolerance are critical.
Availability
STP65NF06 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC PFC stages requiring stable component supply and long-term industrial availability.
Supply support for STP65NF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.
STP65NF06 belongs to the STripFET™ II Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.
FAQ
What is the maximum safe gate-source voltage for STP65NF06?
The absolute maximum VGS is ±20 V per the datasheet. Operation above ±15 V risks oxide damage, while below ±2 V may cause incomplete turn-on. Recommended drive is 10 V for full enhancement with margin - matching standard logic-level gate drivers and avoiding overvoltage stress.
Can STP65NF06 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (confirmed in Figure 10) enables inherent current sharing. Parallel use requires matched layout, identical gate drive impedance, and thermal coupling to ensure balanced conduction. Derate total current by 15% for two devices to account for mismatch.
Is STP65NF06 suitable for linear-mode (saturation) operation?
No - it is optimized for switching, not linear regulation. Safe operating area (SOA) curves (Figure 1) show limited DC capability: at VDS = 10 V, max continuous current drops to ~12 A due to thermal limits. Linear use risks thermal runaway and premature failure.
Does STP65NF06 have a built-in ESD protection diode on the gate?
No - the device lacks integrated gate ESD protection. External Zener clamping (e.g., 15 V TVS between gate and source) is required in systems exposed to handling or board-level transients. Gate oxide breakdown occurs at ~25 V, making external protection essential for robust assembly and field operation.
STP65NF06 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP65NF06 FAQ
1.How can I place an order for STP65NF06 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP65NF06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP65NF06 reliable?
The price and inventory of STP65NF06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP65NF06 is usually 5 days.
3.What payment methods are accepted for STP65NF06?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP65NF06 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP65NF06?
STP65NF06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP65NF06 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP65NF06?
For technical support, including STP65NF06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP65NF06 requirements.
6.How does Aetrix verify that STP65NF06 is sourced from the original manufacturer or authorized distributors?
All STP65NF06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP65NF06 meets industry standards.
7.What is the process for return or replacement of STP65NF06?
All STP65NF06 units undergo pre-shipment inspection (PSI). If there is an issue with STP65NF06, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP65NF06 part is unused and in its original packaging.
Return procedure for STP65NF06:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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