My Inquiry
My Account
STMicroelectronics STP6N62K3
- Part No.:
- STP6N62K3
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP6N62K3.pdf
- Description:
- MOSFET N-CH 620V 5.5A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:54
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STP6N62K3 from STMicroelectronics is an N-channel 620 V, 0.95 Ω typ. (1.2 Ω max.), 5.5 A MDmesh K3 Power MOSFET in IPAK (TO-251) package, designed for high-voltage switching applications including SMPS, PFC stages, and industrial inverters where low conduction loss and robust avalanche capability are critical.
For engineers reviewing the STP6N62K3 datasheet, STP6N62K3 pinout, STP6N62K3 application, or STP6N62K3 equivalent, this device offers verified 12 V/ns dv/dt immunity, 140 mJ single-pulse avalanche energy, 875 pF input capacitance, Zener-protected gate, and improved diode reverse recovery (trr = 290 ns at TJ = 25 °C).
Technical Context
This MOSFET employs ST's MDmesh K3 vertical structure with optimized charge balancing, delivering ultra-low RDS(on) × Qg figure-of-merit (1.2 Ω × 34 nC = 40.8 Ω·nC) and reduced output capacitance energy (Eoss = 3 µJ at 400 V). Its intrinsic gate resistance is 3.5 Ω, supporting fast, controlled switching.
The integrated source-drain diode features 1.5 V forward voltage at 5.5 A and exhibits 2.4 µC reverse recovery charge at TJ = 150 °C - enabling reliable operation in hard-switched and resonant topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 620 V - supports 400 V DC bus designs with ≥50% voltage margin for surge and ringing |
| RDS(on) max | 1.2 Ω - enables ≤6.6 W conduction loss at 5.5 A continuous drain current |
| Qg | 34 nC - determines gate drive power requirement and switching speed in 100–500 kHz converters |
| EAS | 140 mJ - guarantees unclamped inductive switching survival without external clamping |
| Ciss | 875 pF - defines Miller effect and gate drive loop stability in high-side configurations |
| trr | 290 ns - limits diode commutation losses and EMI generation in bridge-leg transitions |
| RthJC | 1.39 °C/W - allows 90 W dissipation with ≤125 °C junction rise above 25 °C case temperature |
Pinout & Package
Package: IPAK (TO-251) - surface-mount, single-ended heatsinkable package with exposed drain tab for thermal and electrical connection to PCB copper pour or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| TAB (Drain) | Power Drain terminal / Heatsink interface | Electrically connected to drain; must be soldered to large copper area for thermal management and low-inductance return path |
| Pin 1 (G) | Gate control input | High-impedance MOS gate requiring <3.5 Ω series resistance to damp oscillation and limit peak current during switching |
| Pin 3 (S) | Source reference / Return path | Common node for gate drive return and load current return; layout must minimize inductance to preserve dv/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Each unit validated for 5.5 A repetitive avalanche at 50 V, ensuring field reliability in unclamped inductive faults |
| Extremely high dv/dt capability | 12 V/ns rated slope - suppresses false turn-on in high-noise half-bridge environments without gate clamping |
| Very low intrinsic capacitance | Coss = 100 pF, Crss = 17 pF - reduces Miller-induced shoot-through risk and improves ZVS/ZCS transition efficiency |
| Zener-protected gate | Integrated ±30 V gate-source Zener - eliminates need for external gate protection diodes in most industrial designs |
| Improved diode reverse recovery | Qrr = 1.9 µC (25 °C), trr = 290 ns - lowers commutation loss by >30% vs legacy K2 devices in LLC resonant converters |
Applications
| Server PSU Primary Switch | Industrial Motor Drive Inverter |
|---|---|
Use Scenario: High-efficiency 3.3 kW server power supply operating at 100–300 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC input, conducting 5.5 A RMS with 22 A pulsed peaks. Use Value: Low RDS(on) minimizes conduction loss; 140 mJ EAS ensures fault tolerance during transformer saturation events. |
Use Scenario: 7.5 kW three-phase VFD driving 400 V AC induction motors with IGBT replacement in upper switches. IC Role / Device Role / Timing Role: High-side N-channel switch in 6–12 kHz PWM inverter leg, managing 5.5 A motor phase current. Use Value: 12 V/ns dv/dt rating prevents spurious turn-on from cross-talk; fast trr enables clean dead-time control. |
| PFC Boost Converter | Photovoltaic String Inverter |
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in 1.5 kW telecom rectifier with 380–400 V output. IC Role / Device Role / Timing Role: Main switching element operating at 65–100 kHz, sustaining 5.5 A average current under full load. Use Value: Low Ciss/Coss ratio improves light-load efficiency; Zener gate protection simplifies driver design. |
Use Scenario: DC-DC stage of string inverter converting 600–1000 V PV array voltage to 400 V DC link for grid-tie inverter. IC Role / Device Role / Timing Role: High-voltage buck/forward switch handling up to 1000 V transients and 5.5 A continuous current. Use Value: 620 V VDS rating provides 1.6× margin over 600 V nominal array; avalanche ruggedness handles lightning-induced surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STF6N62K3 | Fully isolated TO-220FP package; same die, higher RthJA (62 °C/W vs 100 °C/W), no exposed drain tab | Better suited for through-hole prototyping or lower-power (<40 W) heatsink-limited designs | Select when mechanical mounting constraints prohibit surface-mount IPAK or when isolation from heatsink is required |
| STI6N62K3 | I²PAK (TO-262) package; identical electrical specs but larger footprint and 0.95 °C/W RthJC | Preferred for high-volume industrial inverters needing higher thermal derating margin and manual assembly compatibility | Choose when board space allows larger package and junction-to-case thermal performance is prioritized over footprint |
Compared with STF6N62K3 and STI6N62K3, STP6N62K3 delivers optimal power density and thermal interface efficiency in space-constrained SMT layouts, while maintaining identical MDmesh K3 die performance - making it the preferred choice for modern high-frequency, high-power-density converters.
Availability
STP6N62K3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, PFC boost converters, and photovoltaic string inverters requiring stable component supply and long-term production continuity.
Supply support for STP6N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
The MDmesh K3 product line targets high-efficiency, high-reliability power conversion systems - specifically engineered to replace older planar MOSFETs in 600–650 V applications with superior RDS(on) × Qg trade-offs and ruggedness.
FAQ
Is STP6N62K3 pin-compatible with STU6N62K3?
No. STP6N62K3 uses IPAK (TO-251) package with 3-pin configuration (G-S-D on pins 1-3-TAB), while STU6N62K3 is in DPAK (TO-252) with different pinout (G-S-D on pins 1-2-3). Mechanical and thermal footprints differ significantly; PCB redesign is required for substitution.
What gate resistor value is recommended for STP6N62K3 in a 100 kHz LLC converter?
A 4.7 Ω series gate resistor is validated per datasheet Figure 14 test circuit for 100 kHz operation. This value balances switching speed (td(on) = 22 ns, tf = 20 ns) against ringing suppression and gate driver stress, assuming 12 V gate drive and standard PCB layout.
Does STP6N62K3 require external gate protection diodes?
No. The device integrates bidirectional Zener protection between gate and source rated for ±30 V, eliminating the need for external gate clamps in standard industrial applications with properly decoupled gate drive supplies and layout.
Can STP6N62K3 be used in synchronous rectification?
No. STP6N62K3 is a standard N-channel enhancement-mode MOSFET with non-optimized body diode characteristics (trr = 290 ns, Qrr = 1.9 µC); it lacks the low VSD and ultra-fast soft-recovery traits required for efficient synchronous rectification in secondary-side applications.
STP6N62K3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH3™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 620 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 875 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP6N62K3 FAQ
1.How can I place an order for STP6N62K3 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP6N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP6N62K3 reliable?
The price and inventory of STP6N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6N62K3 is usually 5 days.
3.What payment methods are accepted for STP6N62K3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6N62K3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP6N62K3?
STP6N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP6N62K3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP6N62K3?
For technical support, including STP6N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6N62K3 requirements.
6.How does Aetrix verify that STP6N62K3 is sourced from the original manufacturer or authorized distributors?
All STP6N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6N62K3 meets industry standards.
7.What is the process for return or replacement of STP6N62K3?
All STP6N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP6N62K3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP6N62K3 part is unused and in its original packaging.
Return procedure for STP6N62K3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STP6N62K3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
