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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6N65M2

Name: STP6N65M2
Brand: STMicroelectronics
SKU: STP6N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6N65M2.pdf

Description:: MOSFET N-CH 650V 4A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:9,038

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Product details

Overview

STP6N65M2 from STMicroelectronics is an N-channel 650 V, 1.2 Ω typ. (at V_GS = 10 V, I_D = 2 A), 4 A MDmesh™ M2 Power MOSFET in TO-220 package. It delivers low gate charge (9.8 nC), excellent C_OSS profile (114 pF eq.), and 100% avalanche tested ruggedness for high-efficiency AC-DC flyback and PFC converters.

For engineers reviewing the STP6N65M2 datasheet, STP6N65M2 pinout, STP6N65M2 application, or STP6N65M2 equivalent, this device is selected for high-voltage switching where low conduction loss, fast switching (t_d(off) = 6.5 ns), Zener-protected gate integrity, and reliable unclamped inductive switching performance are critical.

Technical Context

This MOSFET employs ST's MDmesh™ M2 strip layout and optimized vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining 650 V breakdown voltage. Its low C_iss (226 pF) and ultra-low C_rss (0.65 pF) minimize Miller effect and enable clean hard-switching at high frequencies.

The device features a Zener-protected gate (±25 V V_GS rating), 100% tested single-pulse avalanche energy (E_AS = 100 mJ), and robust diode recovery (Q_rr = 1.2 µC, t_rr = 260 ns at T_j = 25 °C), making it suitable for discontinuous conduction mode (DCM) and quasi-resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports universal-input offline SMPS with margin above 400 V DC bus.
R_DS(on) max	1.35 Ω - Ensures ≤ 21.6 W conduction loss at 4 A continuous drain current (T_C = 25 °C).
Q_g	9.8 nC - Enables efficient gate drive with low-power controllers and reduces switching losses in 65–100 kHz designs.
C_oss eq.	114 pF - Optimized for low capacitive turn-off loss and stable operation under high dv/dt (50 V/ns MOSFET ruggedness).
E_AS	100 mJ - Guarantees reliable energy absorption during unclamped inductive switching events without failure.
t_r/t_f	7 ns / 20 ns - Supports fast edge control in DCM flyback and active clamp forward converters.

Pinout & Package

STP6N65M2 uses TO-220 package (Type A, non-isolated, tab-drain). The case serves as the drain terminal and must be electrically isolated from heatsink unless referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for source loop routing; ties to power ground plane.
2 (Gate)	Control input for channel modulation	High-impedance node requiring low-impedance gate driver and RC snubber for oscillation suppression.
3 (Drain / Tab)	Main high-voltage power terminal	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.

Key Features

Feature	Design Value
Extremely low gate charge	9.8 nC total charge enables <5 W gate drive loss at 100 kHz with 12 V drive.
Optimized C_OSS profile	114 pF equivalent output capacitance reduces turn-off energy and improves light-load efficiency.
Zener-protected gate	±25 V V_GS rating prevents gate oxide rupture during layout transients or ESD events.
100% avalanche tested	Each unit validated for 100 mJ single-pulse avalanche ensures field reliability in overcurrent fault conditions.

Applications

AC-DC Adapter

LED Driver

Use Scenario: 65 W universal-input offline flyback converter powering laptop adapters.

IC Role / Device Role: Primary-side high-voltage switch handling 650 V blocking and 4 A peak current.

Use Value: Low R_DS(on) and fast switching minimize conduction + switching losses, achieving >88% efficiency at full load.

Use Scenario: Isolated constant-current LED driver for street lighting (72 V output, 1.2 A).

IC Role / Device Role: Primary-side switch in quasi-resonant topology operating at variable frequency up to 130 kHz.

Use Value: Low C_rss and rugged diode recovery ensure stable zero-voltage switching across line/load variations.

PFC Boost Converter

Industrial Power Supply

Use Scenario: 300 W active PFC front-end for telecom rectifier systems.

IC Role / Device Role: Boost switch operating in continuous conduction mode at 65 kHz.

Use Value: 1.35 Ω R_DS(on) limits thermal rise on TO-220 heatsink, enabling compact 1U form factor design.

Use Scenario: 500 W industrial SMPS with wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role: Main switching element in half-bridge LLC resonant stage.

Use Value: Avalanche-rated construction and 150 °C max junction temperature support long-term reliability in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R190C7	R_DS(on) = 190 mΩ (lower), but V_DS = 650 V same; higher Q_g (32 nC); TO-220FP package only.	Better conduction loss at high current (>6 A), but slower switching increases loss above 65 kHz.	Select when optimizing for <65 kHz fixed-frequency PFC with high average current.
STP7NK80Z	V_DS = 800 V (higher), R_DS(on) = 1.4 Ω (similar), Q_g = 12 nC; older SuperMESH™ process.	Higher voltage margin for 400 V DC bus surge tolerance, but inferior C_oss and no avalanche rating.	Select only if 800 V rating is mandatory and avalanche robustness is not required.

Compared with IPP65R190C7 and STP7NK80Z, STP6N65M2 offers the best balance of low gate charge, proven avalanche capability, and TO-220 compatibility-making it optimal for cost-sensitive, high-reliability 65–100 kHz flyback and DCM PFC designs.

Availability

STP6N65M2 is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for STP6N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP6N65M2 belongs to the MDmesh™ M2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space-constrained and thermally demanding applications.

FAQ

What is the maximum continuous drain current for STP6N65M2 at 100 °C case temperature?

The maximum continuous drain current is 2.5 A at T_C = 100 °C, as specified in Table 2 of the preliminary datasheet. This derating reflects thermal limits of the TO-220 package (R_thj-case = 2.08 °C/W) and ensures safe operation within the 150 °C maximum junction temperature.

Does STP6N65M2 have integrated gate protection?

Yes-STP6N65M2 integrates a Zener diode between gate and source, providing ±25 V gate-source voltage clamping. This protects the gate oxide from transient overvoltage during PCB layout parasitics or ESD events, eliminating need for external gate Zener in most designs.

Can STP6N65M2 replace STP6NK60Z in existing designs?

No-STP6NK60Z has 600 V rating and different dynamic parameters (C_iss = 370 pF, Q_g = 22 nC). While both are TO-220 N-channel MOSFETs, STP6N65M2's lower Q_g and C_oss improve switching efficiency but require gate drive re-optimization; direct replacement is not recommended without validation.

Is the TO-220 package of STP6N65M2 electrically isolated?

No-the TO-220 package used for STP6N65M2 is non-isolated; the metal tab is internally connected to the drain terminal. Electrical isolation from the heatsink requires use of an insulating pad (e.g., mica or polymer film) and isolated mounting hardware.

STP6N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 226 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6N65M2 FAQ

1.How can I place an order for STP6N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6N65M2 reliable?

The price and inventory of STP6N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6N65M2 is usually 5 days.

3.What payment methods are accepted for STP6N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6N65M2?

STP6N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6N65M2?

For technical support, including STP6N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6N65M2 requirements.

6.How does Aetrix verify that STP6N65M2 is sourced from the original manufacturer or authorized distributors?

All STP6N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6N65M2 meets industry standards.

7.What is the process for return or replacement of STP6N65M2?

All STP6N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STP6N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6N65M2 part is unused and in its original packaging.

Return procedure for STP6N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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