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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6N90K5

Name: STP6N90K5
Brand: STMicroelectronics
SKU: STP6N90K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6N90K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6N90K5.pdf

Description:: MOSFET N-CH 900V 6A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP6N90K5 from STMicroelectronics is a 900 V, 6 A N-channel Power MOSFET in TO-220 package, fabricated with MDmesh K5 vertical structure technology. It delivers 910 mΩ typical R_DS(on), 11 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STP6N90K5 datasheet, STP6N90K5 pinout, STP6N90K5 application, or STP6N90K5 equivalent, key selection criteria include its 900 V V_(BR)DSS, ultra-low FoM (R_DS(on) × Q_g = 10.0 nΩ·F), Zener-protected gate, and 210 mJ single-pulse avalanche energy at T_J = 25 °C.

Technical Context

This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to simultaneously reduce specific on-resistance and gate charge-enabling higher power density in 85–265 VAC input systems. Its 4.5 V/ns diode recovery dv/dt rating and 50 V/ns MOSFET dv/dt ruggedness support reliable operation in hard-switched flyback and resonant LLC topologies.

The integrated body diode exhibits 342 ns reverse recovery time (T_J = 25 °C) and 3.13 µC Q_rr, with soft recovery characteristics confirmed by unclamped inductive load testing. Thermal resistance R_thJC is 1.14 °C/W, enabling 110 W continuous dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	900 V - Withstands full mains surge up to 720 V DC bus without breakdown in PFC or offline converters.
R_DS(on) max	1100 mΩ @ V_GS = 10 V, I_D = 3 A - Enables low conduction loss in 6 A continuous switching applications.
Q_g	11 nC - Reduces driver power requirement and switching transition time in high-frequency (>100 kHz) designs.
E_AS	210 mJ - Supports robust unclamped inductive switching in relay drivers and solenoid controls without external snubbers.
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during fast voltage transients in high-side configurations.
T_J range	−55 to 150 °C - Validated for use in industrial ambient environments up to 85 °C with derated current.

Pinout & Package

TO-220 type A package with isolated tab (drain-connected). Standard through-hole mounting; tab electrically connected to drain for direct heatsink coupling and thermal path optimization.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate	Controls channel conduction; requires 10 V drive for full enhancement; Zener-protected ±30 V rating prevents ESD damage.
D (Tab)	Drain	Main high-voltage terminal; electrically tied to metal tab for low-inductance heatsink interface and thermal conduction.
S (Pin 3)	Source	Power return node; referenced for gate drive; carries full load current and reverse diode conduction in synchronous rectification.

Key Features

Feature	Design Value
Ultra-low gate charge	11 nC enables <100 ns switching transitions with 1 Ω gate resistor, reducing switching losses in 100–500 kHz SMPS.
Very low FoM (R_DS(on) × Q_g)	~10.0 nΩ·F - Benchmark figure of merit for 900 V MOSFETs, directly improving efficiency in high-density adapters.
Zener-protected gate	Integrated ±30 V gate-body Zener clamps ESD and overvoltage events, eliminating need for external gate protection components.
100% avalanche tested	Each unit validated for 2 A repetitive avalanche current and 210 mJ single-pulse energy, ensuring field reliability in inductive loads.

Applications

Industrial AC-DC Power Supplies

Active PFC Front-Ends

Use Scenario: 300–500 W universal-input offline SMPS with primary-side switching.

IC Role / Device Role / Timing Role: High-voltage switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 900 V rating accommodates 385 V DC bus with margin; 1100 mΩ R_DS(on) limits conduction loss to <1.5 W at 6 A RMS.

Use Scenario: Boost-type active power factor correction stage in server PSUs and LED drivers.

IC Role / Device Role / Timing Role: Main switching element operating at 65–100 kHz with critical conduction mode (CrCM) control.

Use Value: Low Q_g reduces gate drive loss; 50 V/ns dv/dt ruggedness prevents false triggering during boost diode reverse recovery.

Motor Drive Protection Circuits

High-Voltage Relay/Solenoid Drivers

Use Scenario: Overvoltage clamp and freewheeling path in 3-phase inverter brake circuits.

IC Role / Device Role / Timing Role: Snubberless clamping switch absorbing regenerative energy during rapid deceleration.

Use Value: 210 mJ E_AS sustains repeated 2 A/50 V inductive spikes without degradation; TO-220 tab enables direct heatsink mounting.

Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC actuators or industrial valves.

IC Role / Device Role / Timing Role: High-side load switch with integrated avalanche energy handling for inductive kickback suppression.

Use Value: Eliminates external flyback diode; 342 ns t_rr minimizes voltage overshoot during turn-off; Zener gate ensures long-term reliability under surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW6N90K5	Same die, TO-247 package; lower R_thJC (0.85 °C/W) but larger footprint and higher cost.	Better thermal performance in >150 W continuous-duty designs; unsuitable for space-constrained TO-220 layouts.	Select when junction temperature must stay <125 °C at >8 A peak or >100 W dissipation.
FQP6N90C	900 V, 6 A, 1200 mΩ R_DS(on), 22 nC Q_g; no avalanche rating or Zener gate protection.	Lacks 100% avalanche test and dv/dt ruggedness; requires external gate clamp and snubber network.	Acceptable only in non-critical, low-reliability consumer applications with conservative derating and added protection circuitry.

Compared with STW6N90K5, STP6N90K5 trades thermal headroom for compactness and cost; versus FQP6N90C, it provides verified avalanche robustness and integrated gate protection-critical for industrial BOM simplification and field failure prevention.

Availability

STP6N90K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, active PFC front-ends, and motor drive protection circuits requiring stable component supply and long-lifecycle support.

Supply support for STP6N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP6N90K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications where low R_DS(on), low Q_g, and rugged avalanche capability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP6N90K5 supports 4 A continuous drain current at T_C = 100 °C, per absolute maximum ratings table. This derating reflects thermal limitations of the TO-220 package; actual usable current depends on heatsink design and ambient conditions.

Is the body diode suitable for synchronous rectification?

No-the body diode has 342 ns reverse recovery time and 3.13 µC Q_rr at 25 °C, making it unsuitable for high-frequency synchronous rectification. It is optimized for freewheeling and clamping, not bidirectional conduction.

Does STP6N90K5 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7–10 Ω) is required to dampen ringing and control dV/dt during switching. The intrinsic gate resistance is 6.4 Ω, but external series resistance ensures robust turn-on/turn-off timing and EMI control in real PCB layouts.

Can STP6N90K5 replace older STP6NK90Z in existing designs?

Yes-with caution: STP6N90K5 offers lower R_DS(on) (910 mΩ vs. 1250 mΩ typ.) and lower Q_g (11 nC vs. 22 nC), but identical pinout and voltage rating. Gate drive timing and snubber values may need adjustment due to faster switching edges.

STP6N90K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6N90K5 FAQ

1.How can I place an order for STP6N90K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6N90K5 reliable?

The price and inventory of STP6N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6N90K5 is usually 5 days.

3.What payment methods are accepted for STP6N90K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6N90K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6N90K5?

STP6N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6N90K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6N90K5?

For technical support, including STP6N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6N90K5 requirements.

6.How does Aetrix verify that STP6N90K5 is sourced from the original manufacturer or authorized distributors?

All STP6N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6N90K5 meets industry standards.

7.What is the process for return or replacement of STP6N90K5?

All STP6N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP6N90K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6N90K5 part is unused and in its original packaging.

Return procedure for STP6N90K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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