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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6NB90

Name: STP6NB90
Brand: STMicroelectronics
SKU: STP6NB90
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6NB90

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6NB90.pdf

Description:: MOSFET N-CH 900V 5.8A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:5,871

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Product details

Overview

STP6NB90 from STMicroelectronics is an N-channel enhancement-mode PowerMESH™ MOSFET designed for high-voltage switching in primary-side SMPS, welding inverters, and UPS systems. It delivers 900 V V_DSS, 1.7 Ω R_DS(on) (typ.), 5.8 A continuous drain current at T_C = 25 °C, and 100% avalanche-tested ruggedness in TO-220 package.

For engineers reviewing the STP6NB90 datasheet, STP6NB90 pinout, STP6NB90 application, or STP6NB90 equivalent, key selection criteria include unclamped inductive switching capability, dv/dt immunity up to 4.5 V/ns, low gate charge (Q_g = 40 nC), and thermal resistance (R_thj-case = 1.08 °C/W) critical for high-reliability power conversion designs.

Technical Context

This MOSFET employs ST's proprietary high-voltage MESH OVERLAY™ process with strip layout and edge termination to minimize R_DS(on) per die area while maximizing avalanche energy (E_AS = 250 mJ) and di/dt robustness. Its intrinsic capacitances-C_iss = 1400 pF, C_oss = 160 pF, C_rss = 18 pF-are optimized for fast, low-loss hard-switching.

The device operates with gate threshold voltage V_GS(th) = 3–5 V and exhibits low forward transconductance g_fs = 1.5–4 S, enabling stable turn-on under wide V_GS margins. Its source-drain diode supports synchronous rectification with V_SD = 1.6 V at 5.8 A and t_rr = 650 ns at 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	900 V - Withstands full-line surge in 400 V AC-input SMPS without clamping
R_DS(on)	1.7 Ω (typ.) - Enables <5 W conduction loss at 5.8 A, reducing heatsink size
I_D (cont.)	5.8 A @ T_C = 25 °C - Supports >300 W output in flyback or forward converters
E_AS	250 mJ - Absorbs unclamped inductive energy during MOSFET turn-off without failure
Q_g	40 nC - Reduces gate drive power and enables use of low-current drivers (e.g., UC384x)
dv/dt	4.5 V/ns - Immune to parasitic turn-on in high-noise industrial environments
R_thj-case	1.08 °C/W - Allows direct mounting to heatsink for 135 W dissipation at ΔT = 146 °C

Pinout & Package

STP6NB90 is housed in a standard TO-220 package with isolated tab (drain-connected). The three-terminal configuration supports through-hole mounting and direct heatsinking via the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for PCB ground plane; referenced to driver IC ground
2 (Gate)	Control terminal for channel conduction	High-impedance input requiring <40 nC charge; sensitive to ESD and ringing
3 (Drain)	Main high-voltage power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless floating design

Key Features

Feature	Design Value
PowerMESH™ structure	Delivers lowest R_DS(on)/area among 900 V MOSFETs, improving power density
100% avalanche tested	Guarantees single-pulse E_AS ≥ 250 mJ, eliminating need for external snubbers in inductive loads
Extremely high dv/dt capability	Withstands 4.5 V/ns without false triggering-critical for half-bridge leg reliability
Minimized gate charge	Q_g = 40 nC reduces switching losses and driver stress in 50–100 kHz SMPS
Low intrinsic capacitances	C_iss/C_oss/C_rss ratio of 8.75:1:0.11 enables predictable Miller plateau timing

Applications

SMPS Primary Switch

Welding Inverter Output Stage

Use Scenario: High-efficiency 200–500 W offline flyback or forward converter operating at 60–100 kHz.

IC Role / Device Role / Timing Role: Main high-side switch handling full DC bus voltage (≈550 V) and peak currents up to 23 A.

Use Value: Avalanche ruggedness eliminates need for RCD clamp; low Q_g enables clean gate drive with UC3845-based controllers.

Use Scenario: IGBT replacement in 3-phase inverter modules for arc welding equipment.

IC Role / Device Role / Timing Role: Hard-switched output stage switching 400–800 V DC link at 10–20 kHz with high di/dt.

Use Value: 4.5 V/ns dv/dt rating prevents spurious turn-on during commutation; TO-220 tab allows direct heatsink mounting.

UPS Inverter Bridge

Motor Drive Snubberless Switch

Use Scenario: 1 kVA online UPS using full-bridge inverter to generate 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg, conducting 5.8 A RMS with 23 A pulsed peaks.

Use Value: Low R_DS(on) minimizes conduction loss; 150 °C max junction temperature supports compact enclosure cooling.

Use Scenario: Single-phase BLDC controller for industrial pumps where space limits snubber components.

IC Role / Device Role / Timing Role: Unclamped inductive switching element driving motor phase windings with no external freewheeling diode.

Use Value: 250 mJ E_AS safely absorbs stored inductive energy, enabling snubberless operation and reduced BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK90Z	Zener-protected gate; R_DS(on) = 1.8 Ω; Q_g = 42 nC; same TO-220	Higher gate robustness against overvoltage but slightly higher conduction loss	Preferred where gate drive instability or transient coupling is a concern
FQP6N90C	No avalanche rating; R_DS(on) = 1.9 Ω; Q_g = 45 nC; TO-220	Lacks 100% avalanche test; lower E_AS margin in unclamped inductive loads	Suitable only in clamped topologies or cost-sensitive non-critical designs

Compared with STP6NK90Z and FQP6N90C, STP6NB90 offers the best balance of avalanche ruggedness, low R_DS(on), and proven dv/dt immunity-making it the preferred choice for industrial-grade SMPS and welding inverters where reliability under fault conditions is mandatory.

Availability

STP6NB90 is available at Aetrix Electronics and suitable for switch-mode power supplies, welding inverters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for STP6NB90 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering silicon solutions for automotive, industrial, and power applications since 1987.

The STP6NB90 belongs to ST's PowerMESH™ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency primary-side switching in industrial power conversion where avalanche endurance and thermal stability are non-negotiable.

FAQ

Is STP6NB90 pin-compatible with STP6NB90FP?

Yes-both share identical pinout (Source-Gate-Drain) and TO-220 mechanical footprint. However, STP6NB90FP uses TO-220FP (full-pack) with insulated tab and lower P_tot (40 W vs. 135 W), requiring different thermal design. Electrical specs are otherwise identical.

What is the maximum safe operating frequency for STP6NB90 in hard-switched applications?

Based on its Q_g = 40 nC, C_iss = 1400 pF, and t_r/t_f ≈ 10/15 ns, STP6NB90 supports reliable hard switching up to 150 kHz in well-designed gate-drive circuits with R_G ≤ 10 Ω. Above this, switching losses rise sharply due to increased capacitive charging current.

Does STP6NB90 require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to dampen ringing and control dV/dt. For 60–100 kHz SMPS with UC384x drivers, R_G = 4.7 Ω is validated in ST's reference designs. Lower values (<2.2 Ω) risk overshoot; higher values (>10 Ω) increase switching losses and delay turn-off.

Can STP6NB90 replace IRFP460 in existing designs?

Yes-with caveats: both are 500 V-class rated, but STP6NB90 is 900 V-rated and has lower R_DS(on) (1.7 Ω vs. 2.7 Ω) and higher avalanche rating (250 mJ vs. 190 mJ). Layout must verify gate drive compatibility and heatsink interface, as TO-220 dimensions differ slightly.

STP6NB90 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 5.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 135W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6NB90 FAQ

1.How can I place an order for STP6NB90 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6NB90 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6NB90 reliable?

The price and inventory of STP6NB90 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6NB90 is usually 5 days.

3.What payment methods are accepted for STP6NB90?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6NB90 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6NB90?

STP6NB90 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6NB90 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6NB90?

For technical support, including STP6NB90 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6NB90 requirements.

6.How does Aetrix verify that STP6NB90 is sourced from the original manufacturer or authorized distributors?

All STP6NB90 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6NB90 meets industry standards.

7.What is the process for return or replacement of STP6NB90?

All STP6NB90 units undergo pre-shipment inspection (PSI). If there is an issue with STP6NB90, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6NB90 part is unused and in its original packaging.

Return procedure for STP6NB90:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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