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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6NC60

Name: STP6NC60
Brand: STMicroelectronics
SKU: STP6NC60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6NC60

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6NC60.pdf

Description:: MOSFET N-CH 600V 6A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:7,134

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Product details

Overview

STP6NC60 from STMicroelectronics is an N-channel 600 V, 6 A PowerMESH™II vertical power MOSFET in TO-220 package with R_DS(on) ≤ 1.2 Ω at V_GS = 10 V, 100% avalanche tested, and optimized for high-speed switching in SMPS and motor drives.

For engineers reviewing the STP6NC60 datasheet, STP6NC60 pinout, STP6NC60 application, or STP6NC60 equivalent, key selection criteria include its 600 V V_DSS, 1.0 Ω typical R_DS(on), 35–45.5 nC total gate charge, 3 V/ns dv/dt capability, and rugged unclamped inductive switching performance.

Technical Context

This MOSFET employs ST's PowerMESH™II layout architecture to improve R_DS(on) × area figure of merit while maintaining fast switching (t_r = 14 ns, t_f = 16 ns) and low gate charge (Q_gd = 17.2 nC). It features a built-in body diode with 450 ns reverse recovery time and 2.9 µC Q_rr under specified conditions.

The device operates up to T_j = 150 °C, supports repetitive avalanche energy E_AS = 320 mJ, and delivers 6 A continuous drain current at T_C = 25 °C with thermal resistance R_thj-case = 1.0 °C/W in TO-220 - enabling compact heatsink integration in high-voltage DC-AC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 600 V drain-source blocking voltage, suitable for 400 V DC bus applications with safety margin.
R_DS(on) max	1.2 Ω @ V_GS = 10 V, I_D = 3 A - Enables low conduction loss in 6 A continuous switching paths.
Q_g total	35–45.5 nC @ V_DD = 480 V, I_D = 6 A - Determines gate driver power requirement and switching speed trade-off.
t_r/t_f	14 ns / 16 ns @ V_DD = 300 V, R_G = 4.7 Ω - Supports >100 kHz switching in hard-switched topologies.
E_AS	320 mJ @ T_j = 25 °C - Confirmed single-pulse avalanche robustness for inductive load transients.
dv/dt capability	3 V/ns - Resists false turn-on during high-slew-rate voltage transients in bridge configurations.
R_thj-case	1.0 °C/W - Allows ~125 W dissipation at ΔT = 125 °C, defining minimum heatsink thermal mass for continuous operation.

Pinout & Package

TO-220 package with 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input requiring < ±30 V rating; low input capacitance (C_iss = 1020 pF) eases driver design.
Pin 2	Drain (Tab)	Main high-voltage power terminal; electrically tied to metal mounting surface - requires isolation when mounted to heatsink.
Pin 3	Source	Reference node for gate drive and current sensing; forms common return path for load current and body diode conduction.

Key Features

Feature	Design Value
PowerMESH™II cell structure	Reduces R_DS(on) × area by layout refinement without sacrificing switching speed or ruggedness.
100% avalanche tested	Guarantees single-pulse E_AS = 320 mJ and repetitive I_AR = 6 A performance under unclamped inductive stress.
Minimized gate charge	Q_gd/Q_gs ratio optimized to suppress Miller-induced shoot-through in half-bridge operation.
High dv/dt immunity	3 V/ns rated capability ensures reliable operation in fast-rising edge environments like LLC resonant converters.
Integrated body diode	Forward voltage V_SD = 1.6 V @ I_SD = 6 A enables synchronous rectification replacement in low-frequency flyback or PSFB designs.

Applications

Industrial Motor Drives

Welding Equipment Power Stages

Use Scenario: High-current, medium-frequency (20–50 kHz) inverter leg in 3 kW brushless DC motor controllers.

IC Role / Device Role / Timing Role: Main switching element in 600 V DC bus half-bridge, handling 6 A RMS phase current with forced-air cooling.

Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating protects against IGBT-like inductive kick during emergency stop.

Use Scenario: Primary-side switch in resonant DC-AC inverter for arc welding power supplies.

IC Role / Device Role / Timing Role: Hard-switched 600 V, 6 A power stage operating at 30–100 kHz with high di/dt demands.

Use Value: 3 V/ns dv/dt capability prevents spurious turn-on during rapid bus voltage transitions; low Q_g reduces gate driver losses.

Uninterruptible Power Supplies

Switch-Mode Power Supplies

Use Scenario: Output inverter stage in 1–2 kVA online UPS systems with battery backup.

IC Role / Device Role / Timing Role: 600 V MOSFET in full-bridge topology delivering 230 V AC output from 400 V DC bus.

Use Value: 150 °C max junction temperature and 1.0 °C/W R_thj-case support sustained 100% load with compact heatsinking.

Use Scenario: Primary-side switch in 300–500 W offline flyback or forward converter.

IC Role / Device Role / Timing Role: 600 V, 6 A switching transistor handling peak currents up to 24 A in pulsed mode.

Use Value: 100% avalanche testing ensures reliability during output short-circuit or transformer saturation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60Z	600 V, 6 A, R_DS(on) = 1.2 Ω, but uses SuperMESH™ process with lower Q_g (28 nC) and higher C_oss (240 pF).	Better efficiency at >100 kHz due to lower gate charge; less suitable for high dv/dt environments due to reduced immunity.	Select when optimizing for high-frequency SMPS where gate drive loss dominates over voltage transient immunity.
FQP6N60	600 V, 6 A, R_DS(on) = 1.5 Ω, Q_g = 32 nC, no avalanche rating specified in datasheet.	Lacks guaranteed avalanche ruggedness; higher R_DS(on) increases conduction loss by ~25% at full load.	Acceptable only in cost-sensitive, non-critical applications with conservative SOA derating and external clamping.

Compared with STP6NC60, STP6NK60Z offers lower switching loss but reduced dv/dt tolerance, while FQP6N60 trades ruggedness and on-resistance for lower unit cost - making STP6NC60 the balanced choice for industrial-grade 600 V switching where reliability under transient stress is mandatory.

Availability

STP6NC60 is available at Aetrix Electronics and suitable for industrial motor drives, welding equipment inverters, uninterruptible power supplies, and switch-mode power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for STP6NC60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The PowerMESH™II MOSFET product line targets high-reliability, medium-power industrial switching applications - emphasizing avalanche ruggedness, thermal stability, and consistent parametric performance across temperature and production lots.

FAQ

Is STP6NC60 pin-compatible with STP6NC60FP?

No. STP6NC60 uses TO-220 package with R_thj-case = 1.0 °C/W and 125 W power dissipation, while STP6NC60FP uses TO-220FP with R_thj-case = 3.1 °C/W and 40 W rating. Pin numbering is identical (G-D-S), but thermal and current capabilities differ significantly - direct substitution requires heatsink and SOA revalidation.

What is the maximum recommended gate resistor for hard-switched operation?

For resistive-load switching at V_DD = 300 V and I_D = 3 A, ST recommends R_G = 4.7 Ω to balance switching speed (t_r/t_f ≈ 14/16 ns) and gate oscillation suppression. Lower values risk ringing; higher values increase switching loss beyond 100 kHz operation.

Does STP6NC60 support paralleling for higher current?

Yes, but with strict layout and gate drive requirements: matched PCB trace lengths, individual gate resistors (≤ 10 Ω), Kelvin source connections, and thermally balanced mounting. The positive temperature coefficient of R_DS(on) enables current sharing, but dynamic imbalance must be mitigated via gate drive symmetry.

Can STP6NC60 replace STB6NC60-1 in existing designs?

Yes - STB6NC60-1 is functionally identical to STP6NC60 in electrical specs and pinout, differing only in packaging (I2PAK vs TO-220) and thermal resistance (R_thj-case = 1.0 °C/W for both). Mechanical fit and PCB footprint must be verified; thermal interface design may require adjustment due to different case geometry.

STP6NC60 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: PowerMESH™ II

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6NC60 FAQ

1.How can I place an order for STP6NC60 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6NC60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6NC60 reliable?

The price and inventory of STP6NC60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6NC60 is usually 5 days.

3.What payment methods are accepted for STP6NC60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6NC60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6NC60?

STP6NC60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6NC60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6NC60?

For technical support, including STP6NC60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6NC60 requirements.

6.How does Aetrix verify that STP6NC60 is sourced from the original manufacturer or authorized distributors?

All STP6NC60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6NC60 meets industry standards.

7.What is the process for return or replacement of STP6NC60?

All STP6NC60 units undergo pre-shipment inspection (PSI). If there is an issue with STP6NC60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6NC60 part is unused and in its original packaging.

Return procedure for STP6NC60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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