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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP6NK60Z

Name: STP6NK60Z
Brand: STMicroelectronics
SKU: STP6NK60Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP6NK60Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP6NK60Z.pdf

Description:: MOSFET N-CH 600V 6A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:1,841

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Product details

Overview

STP6NK60Z from STMicroelectronics is a Zener-protected N-channel 600 V, 1.2 Ω (max), 6 A SuperMESH Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS, AC-DC adapters, and lighting ballasts. It features 100% avalanche testing, 4.5 V/ns dv/dt capability, and 33 nC total gate charge.

For engineers reviewing the STP6NK60Z datasheet, STP6NK60Z pinout, STP6NK60Z application, or STP6NK60Z equivalent, key selection criteria include its 600 V drain-source breakdown voltage, 1.2 Ω R_DS(on) at 10 V_GS, 24 A pulsed drain current, 110 W power dissipation at T_C = 25 °C, and Zener-protected gate structure for robust ESD immunity.

Technical Context

This device implements ST's SuperMESH technology - an optimized evolution of PowerMESH - delivering reduced on-resistance while maintaining high ruggedness. Its Zener-protected gate ensures ±30 V_GS tolerance and 3.5 kV HBM ESD rating.

The MOSFET supports unclamped inductive switching with 210 mJ single-pulse avalanche energy and operates reliably up to 150 °C junction temperature. Its 905 pF input capacitance and 25 pF reverse transfer capacitance enable fast, controlled switching in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full mains rectified voltage in 230 VAC systems without derating.
R_DS(on) max	1.2 Ω at V_GS = 10 V, I_D = 3 A - Enables low conduction loss in 6 A continuous switching applications.
I_D cont @ T_C = 25 °C	6 A - Supports medium-power DC-DC and AC-DC primary-side switching up to ~75 W.
E_AS	210 mJ - Guarantees reliable operation under unclamped inductive turn-off stress (e.g., flyback snubberless designs).
Q_g	33–46 nC - Optimized for efficient gate driving with standard 1 A peak drivers at 50–100 kHz.
dv/dt capability	4.5 V/ns - Prevents spurious turn-on during high-speed voltage transients in noisy industrial environments.
T_J max	150 °C - Allows operation in sealed enclosures or high-ambient thermal environments without forced cooling.

Pinout & Package

STP6NK60Z is housed in a TO-220 type A package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring proper insulation when mounted to heatsinks. Thermal resistance is 4.2 °C/W (junction-to-case) and 62.5 °C/W (junction-to-ambient).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-voltage current path output	Electrically tied to metal tab; must be insulated from chassis/heat sink unless referenced to system ground.
Gate (Pin 1)	Control electrode	Receives 10 V logic-level drive; Zener-protected to ±30 V; requires <100 Ω series resistance to limit ringing.
Source (Pin 3)	Reference node for gate drive and current return	Serves as common reference for driver IC and current-sense resistor; low-inductance layout critical for dv/dt stability.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for 6 A repetitive avalanche current and 210 mJ single-pulse energy - eliminates need for external clamping in cost-sensitive flyback designs.
Zener-protected gate	Integrated gate-source Zener diode clamps transients to ±30 V - enables direct connection to standard PWM controllers without external protection.
Extremely high dv/dt capability	Rated 4.5 V/ns under ISD ≤ 6 A, di/dt ≤ 200 A/μs, VDD = 480 V - suppresses false triggering in high-noise PFC and half-bridge circuits.
SuperMESH process optimization	Reduces R_DS(on) by ~25% vs. prior PowerMESH generation while preserving SOA - improves efficiency in 65–100 kHz SMPS without sacrificing ruggedness.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions - suitable for global commercial and industrial deployments.

Applications

LED Streetlight Driver

Industrial AC-DC Adapter

Use Scenario: Primary-side switch in 100–150 W quasi-resonant flyback LED driver operating off 230 VAC mains.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary; handles 600 V blocking and 6 A peak primary current.

Use Value: Avalanche ruggedness eliminates snubber network, reducing BOM count and board space; 1.2 Ω R_DS(on) maintains >88% efficiency at full load.

Use Scenario: Main switching transistor in 60 W open-frame AC-DC adapter for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side MOSFET in discontinuous conduction mode (DCM) flyback converter; switches at 65 kHz with 24 A pulsed current capability.

Use Value: 4.5 V/ns dv/dt rating prevents false turn-on during line surges; TO-220 package enables simple heatsinking in compact DIN-rail enclosures.

Universal Input SMPS

Electronic Ballast for HID Lamps

Use Scenario: Primary switch in 75 W universal-input (85–265 VAC) offline SMPS powering industrial sensors.

IC Role / Device Role / Timing Role: High-voltage N-channel switch in active-clamp forward topology; sustains 600 V blocking across full input range.

Use Value: 150 °C max junction temperature allows operation in sealed metal housings; 33 nC Q_g enables clean gate drive with low-cost 1 A driver ICs.

Use Scenario: Half-bridge upper switch in 250 W electronic ballast for metal halide lamps.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus and inductive lamp current reversal.

Use Value: Zener-protected gate withstands Miller-induced spikes during commutation; 24 A pulsed rating supports lamp ignition surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	Same die, TO-220FP package with insulated tab; R_thJC = 4.2 °C/W identical, but lower P_TOT = 30 W due to plastic isolation.	Used where electrical isolation from heatsink is mandatory (e.g., floating ground systems); unsuitable for >30 W continuous dissipation.	Select when creepage/clearance requirements prohibit metal-tab mounting - trade thermal performance for safety compliance.
FQP6N60C	600 V, 1.5 Ω R_DS(on), 6 A, TO-220; no Zener gate protection; 200 mJ E_AS; higher Q_g (45 nC).	Lacks integrated gate Zener - requires external TVS; lower dv/dt rating (3.5 V/ns); less rugged in unclamped inductive loads.	Choose only if gate protection and avalanche margin are handled externally; verify SOA in final layout before substitution.

Compared with STP6NK60Z, STP6NK60ZFP trades thermal capacity for isolation compliance, while FQP6N60C reduces cost but demands added protection circuitry and careful SOA validation - making STP6NK60Z optimal for rugged, self-protected 60–75 W primary-side switching.

Availability

STP6NK60Z is available at Aetrix Electronics and suitable for offline SMPS, LED drivers, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for STP6NK60Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP6NK60Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V offline power conversion - balancing low R_DS(on), robust avalanche behavior, and gate ruggedness.

FAQ

Is STP6NK60Z suitable for zero-voltage switching (ZVS) topologies?

Yes - its 905 pF C_iss, 115 pF C_oss, and 25 pF C_rss support resonant gate drive in LLC and phase-shifted full-bridge designs. However, ZVS soft-switching must be verified against actual transformer leakage inductance and bus voltage, as the device lacks dedicated ZVS-optimized body diode recovery specs beyond trr = 445 ns.

What is the maximum recommended gate resistor value for reliable switching?

A 47 Ω gate resistor is validated in ST's reference test circuit (Figure 15) for 300 V, 3 A resistive switching. For 6 A operation at 100 kHz, use 10–22 Ω to balance switching loss and gate ringing suppression. Values above 100 Ω increase turn-off time and risk thermal runaway during avalanche events.

Does STP6NK60Z require a negative gate turn-off voltage?

No - the device is specified for 0 V to +10 V gate drive and features Zener protection up to ±30 V. Negative turn-off bias is unnecessary and not recommended; standard 0 V/10 V CMOS-compatible drive suffices for all rated conditions including dv/dt stress and avalanche recovery.

Can STP6NK60Z replace STP12NK60Z in existing designs?

No - STP12NK60Z has 0.65 Ω R_DS(on) and 12 A rating, offering 2× current capacity and lower conduction loss. Substituting STP6NK60Z would increase I²R losses by ~150% and exceed safe operating area limits at >6 A, risking thermal failure or avalanche overstress in identical layouts.

STP6NK60Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 905 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP6NK60Z FAQ

1.How can I place an order for STP6NK60Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STP6NK60Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP6NK60Z reliable?

The price and inventory of STP6NK60Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP6NK60Z is usually 5 days.

3.What payment methods are accepted for STP6NK60Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP6NK60Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP6NK60Z?

STP6NK60Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP6NK60Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP6NK60Z?

For technical support, including STP6NK60Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP6NK60Z requirements.

6.How does Aetrix verify that STP6NK60Z is sourced from the original manufacturer or authorized distributors?

All STP6NK60Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP6NK60Z meets industry standards.

7.What is the process for return or replacement of STP6NK60Z?

All STP6NK60Z units undergo pre-shipment inspection (PSI). If there is an issue with STP6NK60Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP6NK60Z part is unused and in its original packaging.

Return procedure for STP6NK60Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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