STMicroelectronics STP75N20

Overview

STP75N20 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 200 V drain-source voltage, 75 A continuous drain current at 25°C, and 0.028 Ω typical R_DS(on) at V_GS = 10 V. It features low gate charge (84 nC), 100% avalanche tested construction, and is optimized as a primary switch in high-efficiency isolated DC-DC converters.

For engineers reviewing the STP75N20 datasheet, STP75N20 pinout, STP75N20 application, or STP75N20 equivalent, key selection criteria include its 200 V breakdown rating, thermal resistance of 0.66 °C/W (junction-to-case), 190 W total dissipation, and suitability for hard-switched topologies requiring robust dv/dt immunity and repetitive avalanche capability.

Technical Context

This STripFET™ II device uses a planar vertical DMOS structure with optimized cell pitch and reduced gate oxide thickness to minimize input capacitance (C_iss = 3260 pF) and gate charge. Its threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits 222 ns reverse recovery time and 2.18 µC Q_rr at 25°C under 100 A/µs di/dt - critical for synchronous rectification and ZVS/ZCS resonant converter design where diode recovery losses dominate efficiency.

Key Specifications

Pinout & Package

STP75N20 is housed in a through-hole TO-220 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology requires drain-referenced mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Compared with IRFP460, STP75N20 delivers 90% lower conduction loss and 40% faster switching at same current, making it superior for 200 V high-current SMPS. Versus STP75NF20, it is the updated manufacturing revision with enhanced traceability and ECOPACK® compliance.

Availability

STP75N20 is available at Aetrix Electronics and suitable for server power supplies, industrial uninterruptible power systems, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for STP75N20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

STP75N20 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in telecom, computing, and renewable energy infrastructure.

FAQ

What is the maximum safe operating temperature for STP75N20?

The STP75N20 has a maximum junction temperature (T_J) of 150°C and a storage temperature range of −50°C to 150°C. For reliable long-term operation, keep T_J ≤130°C under continuous load. At T_C = 100°C, the continuous drain current derates to 47 A - verify heatsink design using R_thJC = 0.66 °C/W and ambient conditions.

Does STP75N20 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 75 A switching with a TC4427A driver, a 4.7 Ω resistor is validated per Figure 15 in the datasheet. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. Always validate with actual layout parasitics.

Can STP75N20 be used in parallel configurations?

Yes - STP75N20 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Use matched gate resistors (±5%), symmetrical PCB layout, and individual source inductance minimization. Derate total current by 15% for thermal imbalance; ensure shared heatsink maintains ΔT_C < 2°C between units.

Is the body diode suitable for synchronous rectification?

No - the body diode has 222 ns t_rr and 2.18 µC Q_rr at 25°C, making it unsuitable for high-frequency synchronous rectification. It is designed for clamping and freewheeling in hard-switched topologies. For synchronous rectification, use an external Schottky or SiC diode with t_rr < 20 ns and Q_rr < 0.1 µC.