STMicroelectronics STP75N3LLH6

Overview

STP75N3LLH6 from STMicroelectronics is an N-channel 30 V, 75 A Power MOSFET in TO-220 package with R_DS(on) = 0.0046 Ω (typ) at V_GS = 10 V and ID = 37.5 A, featuring STripFET™ VI DeepGATE™ technology, high avalanche ruggedness, and low gate charge (Q_g = 17–23.8 nC). It serves as a main switching element in DC-DC converters and motor drive half-bridges.

For engineers reviewing the STP75N3LLH6 datasheet, STP75N3LLH6 pinout, STP75N3LLH6 application, or STP75N3LLH6 equivalent, this page delivers verified electrical ratings, thermal resistance (R_thj-case = 2.5 °C/W), safe operating area (SOA), gate charge profile, and real-world switching behavior under resistive/inductive loads.

Technical Context

This MOSFET employs ST's 6th-generation STripFET™ VI process with DeepGATE™ gate architecture to minimize R_DS(on) × Q_g figure-of-merit - achieving 0.0042 Ω (SMD variant) and 17 nC total gate charge at V_DD = 15 V, ID = 75 A. Its SOA supports unclamped inductive switching up to 300 A pulsed drain current.

Thermal design is enabled by low junction-to-case resistance (2.5 °C/W), compatibility with FR-4 PCBs (R_thj-pcb = 35 °C/W for 1 in², 2 oz Cu), and maximum T_j of 175 °C. The body diode exhibits t_rr = 24 ns and Q_rr = 16.8 nC under ISD = 75 A, di/dt = 100 A/µs conditions.

Key Specifications

Pinout & Package

STP75N3LLH6 uses TO-220 type A package (standard through-hole mounting, tab-drain configuration). The metal tab is electrically connected to the drain terminal and must be isolated from chassis unless referenced to system ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPBF and IXTP75N30L2, STP75N3LLH6 delivers superior R_DS(on) × Q_g performance at 30 V, enabling higher efficiency in high-current, high-frequency switching while maintaining TO-220 compatibility and proven avalanche robustness.

Availability

STP75N3LLH6 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, industrial power supplies, and server VRMs requiring stable component supply and long-term manufacturability.

Supply support for STP75N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STP75N3LLH6 belongs to the STripFET™ VI Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in 12–24 V systems where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current for STP75N3LLH6 at 100 °C case temperature?

The maximum continuous drain current is 47 A at T_C = 100 °C, per Table 2 of the official datasheet (Doc ID 15978 Rev 4). This derating reflects thermal limitations - at higher temperatures, conduction losses increase and safe operating area shrinks due to reduced R_thj-case margin.

Does STP75N3LLH6 have avalanche rating, and how is it tested?

Yes, STP75N3LLH6 is rated for unclamped inductive switching (UIS) with a pulsed drain current of 300 A, as specified in Table 2. Testing follows JEDEC standard JESD24-1 using the circuit in Figure 16, where energy is calculated as E_AS = 0.5 × L × I_DM² and validated across temperature.

Can STP75N3LLH6 be used with 4.5 V gate drive in logic-level applications?

Yes - R_DS(on) is specified at V_GS = 4.5 V (0.0069–0.0084 Ω), confirming usable on-resistance for 5 V logic-driven circuits. However, gate charge rises to 23.8 nC and threshold voltage spreads from 1.0–2.5 V, so robust gate driving and noise margin design are essential.

What is the thermal resistance from junction to PCB for STP75N3LLH6 in TO-220 package?

R_thj-pcb is not specified for TO-220 in the datasheet. Only DPAK (TO-252) lists R_thj-pcb = 35 °C/W (1 in², 2 oz Cu). For TO-220, thermal performance depends entirely on heatsink interface; R_thj-case = 2.5 °C/W is the only guaranteed thermal parameter - PCB conduction is negligible without tab-to-PCB thermal via array.