STMicroelectronics STP75NF68
- Part No.:
- STP75NF68
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
STP75NF68.pdf
- Description:
- MOSFET N-CH 68V 80A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,666
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Product details
Overview
STP75NF68 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 68 V VDS, 80 A continuous drain current at TC = 25 °C, and 0.010 Ω typical RDS(on) at VGS = 10 V. It features 100% avalanche tested ruggedness, 13 V/ns dv/dt capability, and is optimized for high-efficiency DC-DC converters and motor control switching stages.
For engineers reviewing the STP75NF68 datasheet, STP75NF68 pinout, STP75NF68 application, or STP75NF68 equivalent, key selection criteria include its low gate charge (75 nC), fast switching times (td(on) = 17 ns, tf = 75 ns), thermal resistance (Rthj-case = 0.79 °C/W), and SOA-limited pulsed current handling (320 A).
Technical Context
This MOSFET employs ST's STripFET™ II process to minimize input capacitance (Ciss = 2550 pF) and gate charge, enabling high-frequency operation with reduced drive losses. Its internal structure supports unclamped inductive switching with 700 mJ single-pulse avalanche energy rating at TJ = 25 °C.
The device integrates a robust body diode with 80 A continuous source-drain current capability, 1.5 V forward voltage at 80 A, and 70 ns reverse recovery time under specified conditions (di/dt = 100 A/µs, TJ = 150 °C), making it suitable for synchronous rectification and freewheeling roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 68 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters or half-bridge legs. |
| RDS(on) max | 0.014 Ω - Worst-case on-resistance at VGS = 10 V and ID = 40 A; determines conduction loss and heatsink sizing at full load. |
| ID cont @ TC=25°C | 80 A - Continuous drain current rating at case temperature 25 °C; defines maximum steady-state power stage current capacity. |
| Qg | 75 nC - Total gate charge required to fully switch device; directly impacts gate driver power and switching loss at high frequency. |
| EAS | 700 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without external snubbers. |
| dv/dt capability | 13 V/ns - Peak diode recovery voltage slope tolerance; ensures immunity to parasitic turn-on during fast commutation in hard-switched topologies. |
| Rthj-case | 0.79 °C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation when mounted on heatsink with known interface resistance. |
Pinout & Package
STP75NF68 uses a standard TO-220 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main high-side current path and thermal interface | Electrically tied to internal drain region; serves as primary heat dissipation surface; requires insulating washer if heatsink is grounded. |
| Pin 1 (Source) | Reference node for gate drive and current return | Low-impedance connection to source terminal; critical for stable gate-source voltage referencing in high-di/dt applications. |
| Pin 2 (Gate) | Control electrode for channel modulation | High-impedance input requiring <75 nC charge for full enhancement; sensitive to ESD and ringing; needs local RC damping. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process integration | Reduces Ciss to 2550 pF and Qg to 75 nC, enabling >200 kHz switching in SMPS without excessive gate drive loss. |
| 100% avalanche tested | Guarantees minimum 700 mJ single-pulse EAS performance across production lot, eliminating need for derating in inductive load designs. |
| Enhanced dv/dt immunity | Withstands 13 V/ns transient voltage slopes during diode recovery, preventing false turn-on in bridge configurations. |
| Low RDS(on) temperature coefficient | RDS(on) increases only ~1.8× from 25 °C to 175 °C (per Fig. 11), supporting stable current sharing in paralleled MOSFET arrays. |
Applications
| DC-DC Converters | Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-current synchronous buck converter in telecom power supply delivering 48 V input to 12 V/60 A output. IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with 10 V gate drive; handles peak currents up to 80 A during transient load steps. Use Value: Low 0.010 Ω RDS(on) minimizes conduction loss (< 3.8 W at 60 A), while 75 nC Qg keeps switching loss manageable below 300 kHz. | Use Scenario: 24 V BLDC motor controller driving 3-phase inverter with discrete high/low-side FETs per leg. IC Role / Device Role / Timing Role: Low-side switch in each half-bridge leg; commutates 40 A RMS phase current with 10 µs dead-time constraints. Use Value: 13 V/ns dv/dt rating prevents shoot-through during high di/dt freewheeling; 1.5 V VSD reduces body diode conduction loss during dead-time. |
| Uninterruptible Power Supplies | Industrial AC-DC Rectification |
Use Scenario: Online UPS inverter stage converting 380 V DC bus to 230 V AC output using full-bridge topology. IC Role / Device Role / Timing Role: Switching element in H-bridge leg; subjected to repetitive unclamped inductive switching during battery backup mode. Use Value: 700 mJ EAS rating allows safe operation during output short-circuit events without external clamping circuits. | Use Scenario: Active front-end rectifier in industrial 3-phase PFC module replacing diode bridge with synchronous MOSFETs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing diode in boost PFC stage; conducts 50 A average current at 100 kHz switching frequency. Use Value: Low RDS(on) cuts conduction loss by >60% vs. Si diodes; fast trr (70 ns) and low Qrr (4.7 µC) reduce reverse recovery losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404 | VDS = 40 V, RDS(on) = 0.020 Ω, Qg = 131 nC, TO-220 | Limited to ≤40 V bus systems; higher conduction and switching loss at same current | Select only if system voltage ≤40 V and cost sensitivity outweighs efficiency requirements. |
| IPP60R099C6 | VDS = 600 V, RDS(on) = 0.099 Ω, Qg = 49 nC, TO-220FP | Higher voltage rating but significantly higher RDS(on); optimized for 600 V flyback/PFC, not 68 V DC-DC | Not recommended for 68 V applications due to excessive conduction loss; consider only for voltage-scaling redesigns. |
Compared with IRF1404 and IPP60R099C6, STP75NF68 uniquely balances 68 V rating, ultra-low 0.010 Ω RDS(on), and moderate 75 nC gate charge-making it optimal for high-current, medium-voltage switching where both efficiency and thermal management are critical.
Availability
STP75NF68 is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and uninterruptible power supplies requiring stable component supply and proven ruggedness in high-di/dt environments.
Supply support for STP75NF68 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, microcontrollers, power devices, and sensors for industrial, automotive, and consumer markets.
The STripFET™ Power MOSFET product line targets high-efficiency switching applications-including server PSUs, solar inverters, and motor drives-by optimizing RDS(on), gate charge, and avalanche robustness in discrete silicon power devices.
FAQ
What is the maximum safe operating temperature for STP75NF68?
The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 °C to +175 °C. For reliable long-term operation, ST recommends limiting TJ to ≤150 °C under continuous load, based on thermal design using Rthj-case = 0.79 °C/W and measured case temperature.
Can STP75NF68 be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with temperature) promotes natural current sharing. Successful parallel operation requires matched gate drive layout, identical PCB trace lengths, and individual gate resistors (≥10 Ω) to suppress oscillation between devices.
Does STP75NF68 require a gate resistor, and what value is recommended?
Yes-a gate resistor is essential to dampen ringing and control dV/dt. For 10 V gate drive and typical 2 A peak driver capability, a 10–22 Ω series resistor is recommended. Lower values increase switching speed but risk overshoot; higher values reduce EMI but raise switching losses.
Is STP75NF68 lead-free and RoHS compliant?
Yes-STP75NF68 is supplied in an ECOPACK®-compliant TO-220 package with lead-free second-level interconnect, meeting RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements. The inner box label specifies lead-free status and soldering profile limits (Tl = 300 °C for 10 s at 1.6 mm from case).
STP75NF68 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 68 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
STP75NF68 FAQ
1.How can I place an order for STP75NF68 through Aetrix?
Please submit a Request for Quotation (RFQ) for STP75NF68 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP75NF68 reliable?
The price and inventory of STP75NF68 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP75NF68 is usually 5 days.
3.What payment methods are accepted for STP75NF68?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP75NF68 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP75NF68?
STP75NF68 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP75NF68 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP75NF68?
For technical support, including STP75NF68 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP75NF68 requirements.
6.How does Aetrix verify that STP75NF68 is sourced from the original manufacturer or authorized distributors?
All STP75NF68 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP75NF68 meets industry standards.
7.What is the process for return or replacement of STP75NF68?
All STP75NF68 units undergo pre-shipment inspection (PSI). If there is an issue with STP75NF68, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP75NF68 part is unused and in its original packaging.
Return procedure for STP75NF68:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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