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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP77N6F6

Name: STP77N6F6
Brand: STMicroelectronics
SKU: STP77N6F6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP77N6F6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP77N6F6.pdf

Description:: MOSFET N-CH 60V 77A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP77N6F6 from STMicroelectronics is an N-channel 60 V Power MOSFET in TO-220 package, featuring 6.6 mΩ typical R_DS(on) at V_GS = 10 V, 77 A continuous drain current at T_C = 25 °C, and 80 W total power dissipation - optimized for high-efficiency DC-DC converters and motor control switches.

For engineers reviewing the STP77N6F6 datasheet, STP77N6F6 pinout, STP77N6F6 application, or STP77N6F6 equivalent, key selection criteria include on-resistance vs. gate charge trade-off, avalanche ruggedness for inductive load switching, thermal resistance (R_thj-c = 1.88 °C/W), and TO-220 mechanical compatibility with standard heatsinks.

Technical Context

This device implements ST's 6th-generation STripFET™ VI DeepGATE™ process with a redesigned gate structure to minimize R_DS(on) × Q_g figure-of-merit. It supports unclamped inductive switching with specified single-pulse avalanche energy and exhibits low reverse transfer capacitance (C_rss = 217 pF) for improved EMI performance.

The MOSFET delivers 77 A continuous current at case temperature 25 °C and derates to 55 A at 100 °C, with gate threshold voltage (V_GS(th)) between 2 V and 4 V and guaranteed breakdown voltage of 60 V - enabling robust operation in 48 V industrial bus and automotive auxiliary systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V nominal systems and transient overvoltage tolerance up to 60 V
R_DS(on) typ.	6.6 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 40 A, critical for high-current power stages
I_D cont.	77 A @ T_C = 25 °C - supports high-power motor drives and UPS inverters with minimal paralleling
Q_g	76 nC @ V_DD = 30 V, I_D = 77 A - determines gate driver sizing and switching loss in hard-switched topologies
R_thj-c	1.88 °C/W - allows direct mounting to heatsink with predictable junction-to-case thermal path for thermal design
E_AS	Specified single-pulse avalanche energy - ensures reliability during inductive turn-off transients without external snubbers
C_iss	5300 pF @ V_DS = 25 V - impacts gate drive loop stability and Miller effect in high-frequency PWM

Pinout & Package

TO-220 package with isolated tab (drain-connected), 3-pin through-hole configuration. Tab is electrically connected to drain and serves as primary heat transfer surface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge
2 (Gate)	Control input	High-impedance MOSFET gate requiring <76 nC charge for full enhancement
3 (Drain / Tab)	Power output / Heat sink interface	Drain-connected metal tab enables direct thermal coupling to heatsink; requires isolation washer if chassis grounded

Key Features

Feature	Design Value
R_DS(on) × Q_g benchmark	Industry-leading FoM enabling high efficiency at 100–500 kHz switching frequencies
High avalanche ruggedness	Rated for repetitive and non-repetitive unclamped inductive switching per Figure 5 test circuit
Low gate drive power loss	76 nC total gate charge reduces driver IC power consumption and self-heating
Extremely low on-resistance	6.6 mΩ typ. minimizes I²R losses in high-current paths such as battery disconnect and BLDC phase legs

Applications

Motor Control

DC-DC Converters

Use Scenario: Brushless DC motor phase switching in industrial pumps and fans operating from 24–48 V DC bus.

IC Role / Device Role / Timing Role: High-side or low-side power switch in 3-phase inverter bridge with 20–100 kHz PWM.

Use Value: 6.6 mΩ R_DS(on) limits conduction loss to <1.1 W at 45 A, reducing heatsink size by 35% vs. prior-gen MOSFETs.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V–12 V buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch handling continuous 60 A peak currents with fast turn-on/turn-off transitions.

Use Value: Low C_iss (5300 pF) and C_rss (217 pF) suppress voltage spikes and reduce EMI filter component count.

Uninterruptible Power Supplies

Battery Management Systems

Use Scenario: Inverter stage in line-interactive UPS delivering 1–3 kVA output with battery backup.

IC Role / Device Role / Timing Role: Bidirectional power switch supporting both grid-to-load and battery-to-load modes.

Use Value: Avalanche-rated operation withstands 100 µs inductive flyback events during transfer switching without failure.

Use Scenario: High-current battery disconnect switch in 48 V EV auxiliary systems and energy storage racks.

IC Role / Device Role / Timing Role: Solid-state contactor replacing electromechanical relays for >100,000-cycle life and zero arcing.

Use Value: 77 A continuous rating at 25 °C case temperature enables single-device 2 kW load switching without paralleling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ V_GS = 10 V; Q_g = 67 nC; TO-220 package	Higher conduction loss limits use to ≤25 A continuous; lower gate charge eases drive but sacrifices efficiency at high current	Select when cost sensitivity outweighs efficiency and thermal constraints allow larger heatsink
IXTH75N60L2	600 V rating; R_DS(on) = 32 mΩ; TO-247 package; higher voltage margin but 5× higher R_DS(on)	Suitable for 400 V bus designs; not recommended for 48 V systems due to excessive conduction loss	Choose only when system requires 600 V blocking capability - otherwise inefficient for low-voltage applications

Compared with IRFZ44NPBF and IXTH75N60L2, STP77N6F6 uniquely balances ultra-low R_DS(on), moderate gate charge, and 60 V rating - making it optimal for high-current, low-voltage switching where thermal density and efficiency are prioritized over cost or voltage headroom.

Availability

STP77N6F6 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, uninterruptible power supplies, and battery management systems requiring stable component supply across multi-year production cycles.

Supply support for STP77N6F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ VI DeepGATE™ product line targets high-efficiency power conversion with emphasis on R_DS(on)/Q_g optimization for 20–500 kHz switching in industrial motor drives and renewable energy systems.

FAQ

What is the maximum safe operating temperature for STP77N6F6?

The STP77N6F6 has a specified operating junction temperature range of –55 °C to +175 °C. Its maximum continuous case temperature is 100 °C, at which point the rated drain current derates to 55 A. Thermal design must ensure junction temperature remains below 175 °C under worst-case power dissipation and ambient conditions.

Is STP77N6F6 suitable for use in synchronous rectification?

Yes - STP77N6F6 supports synchronous rectification in DC-DC converters due to its low R_DS(on) (6.6 mΩ typ.), fast switching characteristics (low Q_g and C_rss), and body diode with specified reverse recovery parameters (t_rr, Q_rr). Gate drive must be precisely timed to avoid shoot-through in half-bridge configurations.

Does STP77N6F6 have avalanche rating, and how is it tested?

Yes - STP77N6F6 is rated for unclamped inductive switching with specified single-pulse avalanche energy (E_AS) at T_J = 25 °C, ID = I_AR, V_DD = 14 V. Testing follows Figure 5 (unclamped inductive load test circuit) per the datasheet, verifying ruggedness against inductive turn-off transients without external protection.

Can STP77N6F6 be mounted directly to a heatsink without electrical isolation?

No - the TO-220 tab is internally connected to the drain terminal. Direct mounting to a grounded heatsink creates a short circuit unless an electrically isolating thermal pad or mica washer is used. Isolation voltage rating and thermal resistance of the insulator must be verified for system safety and thermal performance.

STP77N6F6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 38.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 76 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 80W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP77N6F6 FAQ

1.How can I place an order for STP77N6F6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP77N6F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP77N6F6 reliable?

The price and inventory of STP77N6F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP77N6F6 is usually 5 days.

3.What payment methods are accepted for STP77N6F6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP77N6F6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP77N6F6?

STP77N6F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP77N6F6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP77N6F6?

For technical support, including STP77N6F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP77N6F6 requirements.

6.How does Aetrix verify that STP77N6F6 is sourced from the original manufacturer or authorized distributors?

All STP77N6F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP77N6F6 meets industry standards.

7.What is the process for return or replacement of STP77N6F6?

All STP77N6F6 units undergo pre-shipment inspection (PSI). If there is an issue with STP77N6F6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP77N6F6 part is unused and in its original packaging.

Return procedure for STP77N6F6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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