STMicroelectronics STP7LN80K5

Overview

STP7LN80K5 from STMicroelectronics is an N-channel 800 V, 0.95 Ω typ. R_DS(on), 5 A MDmesh™ K5 Power MOSFET in TO-220 package, designed for high-voltage switching in offline SMPS and PFC stages. It features 12 nC total gate charge, 1.47 °C/W junction-to-case thermal resistance, and built-in Zener-protected gate, enabling robust operation in industrial AC-DC converters.

For engineers reviewing the STP7LN80K5 datasheet, STP7LN80K5 pinout, STP7LN80K5 application, or STP7LN80K5 equivalent, key selection criteria include its 800 V V_(BR)DSS, ultra-low 0.95 Ω R_DS(on) at 10 V_GS, 1.5 A repetitive avalanche current, 276 ns t_rr diode recovery, and TO-220 thermal performance validated to 150 °C junction temperature.

Technical Context

This device employs ST's MDmesh™ K5 vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 270 pF C_iss, 8.6 nC Q_gd, and 50 V/ns MOSFET dv/dt ruggedness support fast, stable hard-switching in 400–640 V bus applications.

The integrated source-drain diode exhibits 1.6 V forward voltage at 5 A and 2.13 µC Q_rr at 25 °C, with Zener-protected gate (±30 V rating) eliminating need for external clamping in ESD-prone environments.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected), 3-pin through-hole mounting, and 1.47 °C/W thermal resistance junction-to-case. Standard lead finish: matte tin.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW7N80K5, STP7LN80K5 trades 5 W power capability and 0.12 °C/W thermal resistance for TO-220 cost and board-space savings; versus IPP70R1K4C6, it delivers 800 V margin, lower R_DS(on), and gate protection-critical for field-deployed industrial equipment.

Availability

STP7LN80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server SMPS, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STP7LN80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh™ K5 product line targets high-efficiency, high-voltage power conversion, specifically engineered to replace older superjunction MOSFETs in 600–800 V offline applications with superior FoM and ruggedness.

FAQ

Is STP7LN80K5 suitable for use in zero-voltage switching (ZVS) topologies?

Yes. Its 17 nC Co(er), 270 pF C_iss, and 276 ns t_rr support reliable ZVS operation in LLC resonant converters up to 300 kHz. The low Q_gd/Q_g ratio ensures clean turn-off even under high dv/dt, and the 50 V/ns ruggedness rating prevents spurious turn-on during resonant transitions.

Does the built-in Zener protection eliminate need for external gate resistors?

No. The Zener protects against overvoltage but does not suppress ringing or limit peak gate current. A 4.7–10 Ω series gate resistor remains mandatory to control dV/dt, damp oscillation, and prevent false triggering-especially in half-bridge configurations with high di/dt.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies 3.4 A ID (continuous) at T_C = 100 °C. This reflects thermal derating due to reduced safe operating area at elevated temperatures and must be used-not the 5 A rating at 25 °C-when sizing heatsinks for enclosed or high-ambient environments.

Can STP7LN80K5 replace STP7NK80Z in existing designs?

Yes, with validation. STP7LN80K5 offers lower R_DS(on) (0.95 Ω vs 1.05 Ω), lower Q_g (12 nC vs 22 nC), and improved dv/dt ruggedness (50 V/ns vs 35 V/ns). Gate threshold is similar (3–5 V), but layout review is required to confirm gate drive strength and PCB thermal relief compatibility.