STMicroelectronics STP7N105K5

Overview

STP7N105K5 from STMicroelectronics is a 1050 V, 4 A N-channel high-voltage Power MOSFET in IPAK (TO-251) package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.4 Ω typ. R_DS(on), 11 nC total gate charge, and 132 mJ single-pulse avalanche energy - enabling high-efficiency switching in offline SMPS, PFC stages, and industrial HV DC-DC converters.

For engineers reviewing the STP7N105K5 datasheet, STP7N105K5 pinout, STP7N105K5 application, or STP7N105K5 equivalent, key selection criteria include its 1050 V V_(BR)DSS, ultra-low Q_g/R_DS(on) figure of merit, 100% avalanche-tested ruggedness, and Zener-protected gate - critical for reliable operation in high-dv/dt, high-energy flyback and resonant topologies.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 1.14 °C/W R_thJC and 47 pF Co(tr) support high-power density thermal management and fast voltage transitions up to 50 V/ns MOSFET dv/dt ruggedness.

The integrated source-drain diode features 370 ns t_rr at 25 °C and 600 ns at 150 °C, with 3–4.4 µC Q_rr, enabling robust performance in hard-switched inductive loads. Gate threshold is tightly specified at 3–5 V, ensuring stable turn-on across temperature without spurious conduction.

Key Specifications

Pinout & Package

IPAK (TO-251) package with isolated tab (drain-connected), 3-pin single-ended configuration. Compact 6.1 × 6.6 × 16.5 mm outline optimized for high-voltage creepage and manual/automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW7N105K5 and IXTH7N100L2, STP7N105K5 uniquely balances ultra-compact IPAK packaging, industry-leading FoM, and full 1050 V rating - making it optimal for thermally constrained, high-reliability 800 V DC bus applications where layout area and fault robustness are prioritized over absolute peak thermal performance.

Availability

STP7N105K5 is available at Aetrix Electronics and suitable for industrial SMPS, server PFC stages, and LED streetlight drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for STP7N105K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STP7N105K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 700–1000 V DC applications including offline power supplies and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP7N105K5 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10290 Rev 3. This derating from the 4 A rating at 25 °C reflects thermal limitations of the IPAK package's 1.14 °C/W junction-to-case resistance and safe operating area constraints.

Does STP7N105K5 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source, rated for ±30 V, providing inherent protection against gate oxide damage from ESD or drive circuit transients. This eliminates the need for external gate Zener clamps in most designs, per Section 1 and Table 4 of the datasheet.

Can STP7N105K5 be used in hard-switched totem-pole PFC?

No - while its 50 V/ns dv/dt ruggedness and 1050 V rating suit boost PFC, the device lacks the fast, soft-recovery body diode required for bidirectional conduction in totem-pole topologies. Its 370–600 ns t_rr and 3–4.4 µC Q_rr would cause excessive loss and voltage overshoot in AC-line commutation.

What is the recommended gate resistor value for 100 kHz operation?

A 4.7 Ω gate resistor is validated in the datasheet's Figure 14 test circuit for 100 kHz resistive switching, yielding measured t_d(on) = 17.5 ns and t_f = 25 ns. For improved EMI control at this frequency, 10–15 Ω is recommended - verified to maintain safe SOA margins while reducing spectral peaks above 30 MHz.