STMicroelectronics STP7N65M2

Overview

STP7N65M2 from STMicroelectronics is an N-channel 650 V, 0.98 Ω typ. R_DS(on), 5 A MDmesh™ M2 Power MOSFET in TO-220 package. It delivers low gate charge (9 nC), optimized C_oss profile (14.5 pF), and 100% avalanche-tested ruggedness for high-efficiency AC-DC flyback and PFC converters operating up to 100 °C junction temperature.

For engineers reviewing the STP7N65M2 datasheet, STP7N65M2 pinout, STP7N65M2 application, or STP7N65M2 equivalent, key selection criteria include its 650 V V_(BR)DSS, 1.15 Ω max R_DS(on) at 10 V_GS, 20 A pulsed drain current, 60 W power dissipation, and Zener-protected gate for robust switching in industrial SMPS designs.

Technical Context

This device employs ST's MDmesh™ M2 strip layout and enhanced vertical structure to simultaneously minimize conduction loss and improve switching performance. Its 14.5 pF C_oss and 0.8 pF Crss enable fast, low-loss turn-off with controlled dv/dt ruggedness up to 50 V/ns under MOSFET operation.

The integrated body diode features 1.6 V forward voltage at 5 A and 275 ns reverse recovery time at 25 °C - critical for reducing commutation losses in hard-switched topologies. Thermal resistance is 2.08 °C/W (junction-to-case), supporting reliable operation with standard heatsinking.

Key Specifications

Pinout & Package

STP7N65M2 is housed in a TO-220 type A package with isolated tab (pin 2). The case serves as the drain terminal, enabling direct heatsink mounting with electrical isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP65R190C7 and FDPF19N65, STP7N65M2 offers superior R_DS(on)/Q_g trade-off for 65–100 kHz SMPS, tighter C_oss control, and proven avalanche ruggedness - making it optimal for cost-sensitive, thermally constrained industrial adapters.

Availability

STP7N65M2 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU primary switches, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for STP7N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STP7N65M2 belongs to the MDmesh™ M2 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current for STP7N65M2 at 100 °C case temperature?

The maximum continuous drain current is 3.2 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID026788 Rev 3). This derating reflects thermal limitations of the TO-220 package and must be respected to avoid exceeding 150 °C junction temperature under steady-state operation.

Does STP7N65M2 have an integrated body diode, and what are its key recovery parameters?

Yes, STP7N65M2 includes a monolithic source-drain diode with 5 A continuous current rating. At 25 °C, its reverse recovery time is 275 ns and reverse recovery charge is 1.62 µC under ISD = 5 A, di/dt = 100 A/µs, and VDD = 60 V conditions - values confirmed in Table 8 of the datasheet.

Is the TO-220 tab of STP7N65M2 electrically isolated from the leads?

No - the metal tab (pin 2) is internally connected to the drain terminal and is not electrically isolated from the package leads. Electrical isolation must be implemented externally using insulating washers or pads when mounting to a heatsink, as documented in Section 4.1 of the datasheet.

Can STP7N65M2 replace STP7NK60Z in existing designs?

STP7N65M2 is not a direct replacement for STP7NK60Z due to differences in breakdown voltage (650 V vs. 600 V), R_DS(on) (1.15 Ω vs. 1.2 Ω), and gate charge (9 nC vs. 12 nC). While both are TO-220 N-channel MOSFETs, the higher V_(BR)DSS and lower Q_g of STP7N65M2 may require gate driver re-evaluation and layout adjustments for optimal performance.