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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP7N80K5

Name: STP7N80K5
Brand: STMicroelectronics
SKU: STP7N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP7N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP7N80K5.pdf

Description:: MOSFET N-CH 800V 6A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP7N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET based on MDmesh K5 technology, rated for 800 V V_DS, 0.95 Ω typical R_DS(on) at V_GS = 10 V and 3 A, with 13.4 nC total gate charge and 100% avalanche tested. It delivers ultra-low gate charge and industry-leading figure of merit (FoM) in switching power supplies operating up to 150 °C junction temperature.

For engineers reviewing the STP7N80K5 datasheet, STP7N80K5 pinout, STP7N80K5 application, or STP7N80K5 equivalent, this device is selected for high-efficiency, high-density SMPS, PFC stages, and industrial DC-DC converters where low conduction loss, fast switching, and rugged unclamped inductive switching capability are critical.

Technical Context

The STP7N80K5 employs ST's proprietary vertical MDmesh K5 structure to minimize R_DS(on) × area and achieve 1.2 Ω max R_DS(on) at 6 A ID, while maintaining 50 V/ns MOSFET dv/dt ruggedness and 4.5 V/ns diode recovery dv/dt rating. Its Zener-protected gate enables robust ESD tolerance without external clamping.

It features a source-drain diode with 6 A continuous current rating, 315 ns reverse recovery time at TJ = 25 °C, and 2.8 µC Q_rr, supporting hard-switched and resonant topologies. The device operates across –55 to 150 °C junction range and is qualified per 100% UIS testing at 2 A I_AR and 88 mJ E_AS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input offline SMPS up to 400 VAC mains with margin.
R_DS(on) max	1.2 Ω @ V_GS = 10 V, I_D = 3 A - enables <1.5 W conduction loss at 3 A, reducing heatsink requirements.
Q_g	13.4 nC - minimizes drive power and enables use with low-current gate drivers in high-frequency designs.
E_AS	88 mJ @ T_J = 25 °C - ensures reliable operation under unclamped inductive switching stress in flyback and LLC circuits.
R_thJC	1.14 °C/W - allows 96 W power dissipation at ΔT = 110 °C, supporting high-power density layouts on minimal copper area.
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during fast voltage transients in high-side configurations.
I_D cont @ T_C = 100 °C	3.8 A - defines usable current derating for sustained operation in enclosed industrial enclosures.

Pinout & Package

DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; standard 3-pin surface-mount outline conforming to JEDEC TO-252-2 variant (type C3/E).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Pin 2)	Drain (D)	Primary high-voltage node; electrically and thermally connected to PCB copper pour for heat extraction and low-inductance return path.
Pin 1	Gate (G)	Control input requiring ≤ ±30 V drive; low 6 Ω intrinsic gate resistance supports clean edge control and reduced ringing.
Pin 3	Source (S)	Power return reference; ties to ground or low-side switch node; forms source-drain body diode anode/cathode path.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × die area by >30% vs prior K3/K4 generations, enabling smaller footprint for same voltage/current rating.
Zener-protected gate	Integrates gate oxide protection against overvoltage events up to ±30 V, eliminating need for external gate Zener clamp in most applications.
100% avalanche tested	Each unit undergoes UIS stress test at I_AR = 2 A, ensuring guaranteed single-pulse ruggedness without screening fallout.
Ultra-low C_iss/C_oss	360 pF input capacitance and 30 pF output capacitance reduce switching losses and improve light-load efficiency in QR flyback designs.
Low Q_gd/Q_gs ratio	7.5 nC / 3.7 nC ≈ 2.03 - suppresses Miller-induced shoot-through risk and improves hard-switching stability at high dV/dt.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectification

Use Scenario: Primary-side switch in 300–500 W universal-input offline flyback or forward converter.

IC Role / Device Role / Timing Role: High-voltage switching element handling full-line rectified voltage; operates in discontinuous or quasi-resonant mode at 65–135 kHz.

Use Value: 0.95 Ω R_DS(on) and 13.4 nC Q_g enable >92% peak efficiency and <15 °C junction rise at full load on 1-in² 2 oz copper.

Use Scenario: Active OR-ing FET or hold-up switch in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Low-loss bidirectional blocking switch controlling power path between redundant PSUs and load.

Use Value: 800 V rating withstands transient surges up to 640 V; 6 A continuous rating supports 30 A parallel configurations with derating.

LED Driver Ballasts

PFC Boost Stages

Use Scenario: High-side switch in isolated LED driver with integrated PFC and constant-current regulation.

IC Role / Device Role / Timing Role: Main energy-transfer switch in interleaved or single-stage boost-flyback topology operating at 50–100 kHz.

Use Value: 315 ns t_rr and 2.8 µC Q_rr limit diode recovery loss; Zener gate protection avoids failure during lamp open-circuit faults.

Use Scenario: Boost switch in continuous-conduction-mode (CCM) PFC front-end for industrial motor drives.

IC Role / Device Role / Timing Role: High-efficiency main switch handling 10–15 A peak currents at 65–100 kHz with near-unity PF.

Use Value: 1.14 °C/W R_thJC and 110 W P_TOT allow 500 W+ PFC stages without forced air; 50 V/ns dv/dt ruggedness prevents false triggering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8N80K5	800 V, 0.85 Ω typ. R_DS(on), 8 A ID - lower on-resistance but higher Q_g (16.5 nC) and larger die size.	Better conduction loss at >4 A, but requires stronger gate driver and larger PCB area; less suitable for space-constrained 300 W designs.	Select when system prioritizes <0.5 W conduction loss reduction over gate drive simplicity and layout compactness.
FDPF8N80NZ	800 V, 1.15 Ω max R_DS(on), 7.8 A ID, 15 nC Q_g - similar FoM but no integrated Zener gate protection.	Requires external gate clamp; lower avalanche energy rating (E_AS = 65 mJ) limits reliability in unclamped inductive loads.	Choose only if gate protection is implemented externally and UIS stress is strictly controlled via snubbers or layout.

Compared with STP8N80K5, STP7N80K5 trades 0.1 Ω higher R_DS(on) for 2.1 nC lower Q_g and smaller DPAK footprint; versus FDPF8N80NZ, it adds Zener gate protection and +35% E_AS without increasing drive complexity.

Availability

STP7N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectification systems, and LED driver ballasts requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP7N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion where low R_DS(on) × Q_g FoM and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STP7N80K5 supports 3.8 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9173 Rev 8. This rating accounts for thermal derating due to junction-to-case resistance (1.14 °C/W) and ensures safe operation within the 150 °C maximum junction temperature limit under steady-state conditions.

Does STP7N80K5 include integrated gate protection?

Yes - the device integrates a Zener diode between gate and source to clamp gate-source voltage to ±30 V, protecting the thin gate oxide from overvoltage transients during layout parasitics or drive faults. This eliminates the need for external gate Zener clamps in most standard gate-drive configurations.

Can STP7N80K5 be used in hard-switched PFC boost stages?

Yes - its 50 V/ns MOSFET dv/dt ruggedness, 88 mJ E_AS, and 315 ns diode t_rr make it suitable for continuous-conduction-mode (CCM) PFC boost stages up to 500 W. The low Q_gd/Q_gs ratio further enhances stability during high dV/dt transitions common in boost switching nodes.

What is the recommended PCB footprint for thermal performance?

The datasheet specifies a DPAK (TO-252) type E footprint (Figure 22, DS9173 Rev 8) with ≥1 in² of 2 oz copper connected to the drain tab. Minimum solder mask defined pads and thermal vias under the tab are required to achieve the rated 1.14 °C/W R_thJC; deviation reduces power handling capability proportionally.

STP7N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH5™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 13.4 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP7N80K5 FAQ

1.How can I place an order for STP7N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP7N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP7N80K5 reliable?

The price and inventory of STP7N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP7N80K5 is usually 5 days.

3.What payment methods are accepted for STP7N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP7N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP7N80K5?

STP7N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP7N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP7N80K5?

For technical support, including STP7N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP7N80K5 requirements.

6.How does Aetrix verify that STP7N80K5 is sourced from the original manufacturer or authorized distributors?

All STP7N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP7N80K5 meets industry standards.

7.What is the process for return or replacement of STP7N80K5?

All STP7N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STP7N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP7N80K5 part is unused and in its original packaging.

Return procedure for STP7N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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