STMicroelectronics STP7N90K5

Overview

STP7N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, delivering 900 V V_DS, 720 mΩ typ. R_DS(on) at V_GS = 10 V, and 7 A continuous drain current at T_C = 25 °C. It serves as a primary switching device in high-efficiency offline SMPS, PFC stages, and industrial HV DC-DC converters.

For engineers reviewing the STP7N90K5 datasheet, STP7N90K5 pinout, STP7N90K5 application, or STP7N90K5 equivalent, key selection criteria include avalanche ruggedness (230 mJ E_AS), ultra-low Q_g (12 nC), Zener-protected gate, and TO-220 package thermal performance (R_thJC = 1.14 °C/W).

Technical Context

This MOSFET employs ST's proprietary MDmesh K5 process to minimize conduction and switching losses simultaneously: its 720 mΩ typical on-resistance and 12 nC total gate charge enable high-frequency operation up to 100 kHz in hard-switched topologies. The integrated body diode features 352 ns trr and 3.63 µC Q_rr at 25 °C, supporting moderate-speed recovery in flyback and resonant converters.

Rated for 900 V breakdown with ±30 V gate-source voltage tolerance and 100% production-tested avalanche capability, it operates reliably across –55 to 150 °C junction temperature. Its SOA is defined up to 100 µs pulse width at 150 °C, with R_DS(on) normalized to 1.0 at 25 °C and 2.2× at 100 °C.

Key Specifications

Pinout & Package

Delivered in TO-220 type A package (ECOPACK® compliant) with isolated tab (drain-connected), standard 3-pin through-hole mounting, and 1.14 °C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with STW7N90K5, STP7N90K5 trades thermal headroom for compact TO-220 mounting; versus IPP70R950P7XKSA1, it provides critical 900 V rating and lower Q_g for high-margin industrial designs where reliability trumps cost.

Availability

STP7N90K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, and EV charging auxiliary supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP7N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline converters and PFC circuits operating above 600 V DC bus.

FAQ

What is the maximum safe operating area (SOA) for STP7N90K5 at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited by R_DS(on) and thermal constraints: maximum continuous ID drops to 4.4 A, and single-pulse capability falls to ~4.5 A for 10 ms pulses. The device remains within SOA up to 7 A for ≤100 µs pulses at T_J ≤ 150 °C, per Figure 1 in DS11861.

Does STP7N90K5 require external gate protection when driven by standard 15 V logic-level gate drivers?

No external gate protection is required. The integrated Zener diode clamps gate-source voltage to ±30 V, fully covering standard 15 V gate drivers with typical overshoot margins. Gate leakage remains ≤±10 µA at ±20 V, ensuring compatibility with high-impedance drivers.

How does the body diode performance compare to discrete ultrafast diodes in PFC applications?

The intrinsic body diode has 352 ns trr and 3.63 µC Q_rr at 25 °C-comparable to mid-tier ultrafast diodes-but exhibits increased Q_rr (4.94 µC) and trr (525 ns) at 150 °C. For critical high-frequency PFC, a co-packaged SiC Schottky or optimized external diode is recommended to minimize recovery loss.

Can STP7N90K5 be paralleled with identical units for higher current handling?

Yes, but with strict layout and gate drive matching: use individual 4.7 Ω gate resistors, symmetrical PCB traces, and Kelvin source connections to ensure current sharing. Thermal coupling via shared heatsink improves balance; derate total current by 15% due to R_DS(on) positive tempco mismatch above 100 °C.