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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP7N95K3

Name: STP7N95K3
Brand: STMicroelectronics
SKU: STP7N95K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP7N95K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP7N95K3.pdf

Description:: MOSFET N-CH 950V 7.2A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP7N95K3 from STMicroelectronics is an N-channel 950 V, 1.1 Ω typ. (1.35 Ω max), 7.2 A MDmesh K3 Power MOSFET in TO-220 package. It delivers high avalanche energy (220 mJ), low output capacitance (79 pF), and fast switching (td(on) = 14 ns, tf = 23 ns), enabling robust high-voltage hard-switching in industrial SMPS and PFC stages.

For engineers reviewing the STP7N95K3 datasheet, STP7N95K3 pinout, STP7N95K3 application, or STP7N95K3 equivalent, key selection criteria include its 950 V V(BR)DSS rating, Zener-protected gate, 100% avalanche-tested reliability, and improved diode reverse recovery (trr = 450 ns at 25 °C) for reduced EMI in flyback and resonant converters.

Technical Context

This device employs ST's optimized MDmesh K3 vertical structure to achieve ultra-low RDS(on) × area trade-off while maintaining high dv/dt immunity (6 V/ns) and low intrinsic capacitance (Ciss = 1031 pF, Crss = 0.9 pF). Its Zener-protected gate ensures ±30 V VGS tolerance and robustness against transient overvoltage.

The integrated body diode features improved reverse recovery characteristics (Qrr = 6 µC, IRRM = 28 A) and low forward voltage (VSD = 1.6 V at 7.2 A), reducing switching losses in bridge-leg and synchronous rectification topologies where unclamped inductive switching occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	950 V - Withstands DC bus voltages up to 760 V in 400 V AC input PFC or 600 V DC link inverters with margin.
RDS(on) max	1.35 Ω at VGS = 10 V, ID = 3.6 A - Enables <10 W conduction loss at 7.2 A in TO-220 package with heatsink.
EAS	220 mJ - Supports single-pulse unclamped inductive switching without failure under 9 A avalanche current.
Coss	79 pF - Reduces turn-off energy loss and improves efficiency in high-frequency (>100 kHz) hard-switched converters.
trr	450 ns at TJ = 25 °C - Limits diode reverse recovery spike and associated EMI in continuous conduction mode (CCM) PFC.
dv/dt capability	6 V/ns - Prevents false turn-on during high dV/dt transients in high-side switch configurations.
Qg	34 nC - Determines gate drive power requirement (~17 mW at 100 kHz, VGS swing = 10 V).

Pinout & Package

STP7N95K3 is housed in a TO-220 package with isolated tab (non-conductive mounting surface), rated for 2.5 kV RMS insulation withstand voltage between leads and heat sink. Thermal resistance junction-to-case is 0.83 °C/W, enabling 150 W dissipation at TC = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-voltage current path	Connected to DC bus or transformer primary; electrically tied to metal tab in standard TO-220 (non-isolated variant), but STP7N95K3 uses isolated tab per DS6077 Rev 2.
G (Gate)	Control electrode	Zener-protected input requiring ≤±30 V drive; 2.4 Ω intrinsic gate resistance affects Miller plateau timing.
S (Source)	Reference node for gate drive and current sensing	Low-inductance return path; used for current-mode control feedback and overcurrent protection sensing.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse EAS ≥ 220 mJ at TJ = 25 °C, eliminating need for external snubbers in inductive load switching.
Extremely high dv/dt capability	6 V/ns rating prevents spurious turn-on in high-side configurations with fast-rising VDS edges (e.g., LLC half-bridge).
Very low intrinsic capacitance	Ciss = 1031 pF and Crss = 0.9 pF minimize capacitive coupling and improve gate drive efficiency above 100 kHz.
Improved diode reverse recovery	Qrr = 6 µC and trr = 450 ns reduce peak reverse recovery current (IRRM = 28 A), lowering EMI and stress on clamp circuits.
Zener-protected gate	Integrated gate-body Zener clamps VGS to ±30 V, eliminating need for external gate protection in noisy industrial environments.

Applications

Industrial Switch-Mode Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch handling 760 V DC link, operating at 65–130 kHz with hard switching.

Use Value: 950 V breakdown and 220 mJ avalanche energy prevent failure during output short-circuit or startup surge events.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in 48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: Main switching element managing 380–400 V DC bus with ZVS-assisted transitions.

Use Value: Low Coss (79 pF) and Crss (0.9 pF) reduce turn-off loss and enable efficient soft-switching at >100 kHz.

Server PSU PFC Boost Stages

EV Charger Front-End Converters

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC for 3.3 kW server power supplies.

IC Role / Device Role / Timing Role: High-current, high-voltage switch conducting 7.2 A average, switching at 65–100 kHz.

Use Value: Improved diode trr (450 ns) and Qrr (6 µC) suppress recovery spikes, easing EMI filter design and improving THD.

Use Scenario: Primary switch in 11 kW AC/DC OBC front-end with 600 V DC link and active cooling.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in interleaved boost or two-level inverter stage.

Use Value: 1.35 Ω RDS(on) max and 0.83 °C/W RthJC enable thermally sustainable operation at 7.2 A with moderate heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW7N95K3	Same die, TO-247 package; RthJC = 3.57 °C/W vs. 0.83 °C/W; higher ID(pulsed) = 28.8 A.	Better thermal performance in high-power, forced-air-cooled designs; larger footprint and higher cost.	Select when >150 W continuous dissipation or >100 kHz operation demands lower junction temperature rise.
IPP65R190CFD7	650 V Si MOSFET, RDS(on) = 190 mΩ, Ciss = 1320 pF; no avalanche rating; faster Qg = 29 nC.	Not suitable for 950 V applications; requires derating below 500 V DC bus; lacks Zener gate protection.	Only viable in lower-voltage (<550 V) designs where efficiency and speed outweigh voltage margin needs.

Compared with STP7N95K3, STW7N95K3 offers superior thermal management in high-power density systems, while IPP65R190CFD7 trades voltage capability for lower gate charge and conduction loss-making it unsuitable as a direct replacement in 950 V applications.

Availability

STP7N95K3 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, server PSU PFC stages, and EV charger front-end converters requiring stable component supply and long-term lifecycle support.

Supply support for STP7N95K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

This device belongs to the MDmesh K3 family-engineered specifically for high-efficiency, high-reliability high-voltage power conversion in industrial SMPS, PFC, and UPS systems where avalanche ruggedness and low dynamic losses are critical.

FAQ

Is STP7N95K3 pin-compatible with STF7N95K3 or STW7N95K3?

Yes-STP7N95K3 (TO-220), STF7N95K3 (TO-220FP), and STW7N95K3 (TO-247) share identical pinout: Drain (Tab), Gate (Pin 1), Source (Pin 3). Mechanical mounting differs: TO-220FP has insulated tab and shorter leads; TO-247 has larger tab and higher thermal mass. Electrical behavior is identical across packages.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies ID = 4.5 A at TC = 100 °C (Table 1). This reflects thermal derating due to junction-to-case thermal resistance (0.83 °C/W) and maximum TJ = 150 °C. At TC = 25 °C, ID = 7.2 A is supported continuously, assuming adequate heatsinking.

Does STP7N95K3 require external gate protection?

No-STP7N95K3 integrates a Zener diode between gate and source, clamping VGS to ±30 V. This eliminates the need for external gate protection components in typical industrial drive circuits, provided gate drive voltage does not exceed ±30 V and layout minimizes inductive ringing.

Can STP7N95K3 be used in zero-voltage switching (ZVS) topologies?

Yes-its low Crss (0.9 pF) and Coss (79 pF), combined with fast switching times (td(off) = 36 ns, tf = 23 ns), make it suitable for ZVS phases in LLC resonant converters and phase-shifted full-bridges operating up to 300 kHz, provided gate drive strength matches Qg = 34 nC.

STP7N95K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 7.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.35Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1031 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP7N95K3 FAQ

1.How can I place an order for STP7N95K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP7N95K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP7N95K3 reliable?

The price and inventory of STP7N95K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP7N95K3 is usually 5 days.

3.What payment methods are accepted for STP7N95K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP7N95K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP7N95K3?

STP7N95K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP7N95K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP7N95K3?

For technical support, including STP7N95K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP7N95K3 requirements.

6.How does Aetrix verify that STP7N95K3 is sourced from the original manufacturer or authorized distributors?

All STP7N95K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP7N95K3 meets industry standards.

7.What is the process for return or replacement of STP7N95K3?

All STP7N95K3 units undergo pre-shipment inspection (PSI). If there is an issue with STP7N95K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP7N95K3 part is unused and in its original packaging.

Return procedure for STP7N95K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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