STMicroelectronics STP7NK80Z

Overview

STP7NK80Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 1.5 Ω typical R_DS(on), and 5.2 A continuous drain current in TO-220 package. It delivers high dv/dt immunity (4.5 V/ns), 100% avalanche tested ruggedness, and minimized gate charge (40–56 nC) for hard-switching SMPS, PFC stages, and industrial AC-DC converters.

For engineers reviewing the STP7NK80Z datasheet, STP7NK80Z pinout, STP7NK80Z application, or STP7NK80Z equivalent, this device is selected for high-voltage flyback, resonant LLC, and offline switcher designs where avalanche robustness, low conduction loss, and fast switching with controlled EMI are critical.

Technical Context

This MOSFET employs ST's SuperMESH process - an evolution of PowerMESH - to reduce on-resistance while maintaining high breakdown integrity and di/dt tolerance. Its Zener-protected gate ensures ±30 V V_GS rating and 4 kV HBM ESD immunity without external clamping.

The device features a source-drain diode with 530 ns reverse recovery time and 3.31 µC Q_rr at 150 °C, enabling reliable operation in inductive switching circuits. Thermal resistance R_thJC is 1.0 °C/W in TO-220, supporting 125 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

STP7NK80Z is housed in a TO-220 package with isolated tab (non-conductive mounting surface). The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to a heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP8NK80Z and FQP8N80C, STP7NK80Z offers optimal balance of avalanche ruggedness, gate protection, and gate drive efficiency - making it preferred for cost-sensitive, high-reliability offline power stages where layout simplicity and field robustness are prioritized.

Availability

STP7NK80Z is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term lifecycle support.

Supply support for STP7NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

STP7NK80Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power conversion - emphasizing avalanche hardness, gate robustness, and thermal performance in constrained industrial environments.

FAQ

Is STP7NK80Z pin-compatible with STP7NK80ZFP?

No. STP7NK80Z uses a standard TO-220 package with drain-connected tab, while STP7NK80ZFP is in TO-220FP (full-pack) with insulated tab and different pin spacing. Mounting holes, thermal interface, and PCB footprint are incompatible. Electrical specs match, but mechanical integration requires separate layout.

What is the maximum safe operating area (SOA) for STP7NK80Z at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to 3.3 A (per Table 1), and pulsed current remains 20.8 A with pulse width limited by SOA boundaries. The SOA curve (Figure 1) shows resistive-load limits down to 10 ms - for inductive loads, energy must stay below 210 mJ per pulse to avoid second-breakdown.

Does STP7NK80Z require a gate resistor for EMI suppression?

A gate resistor (typically 4.7–22 Ω) is recommended to dampen ringing and control dv/dt during turn-on/turn-off. The device's low Q_gd/Q_gs ratio (21 nC / 7 nC) makes it moderately Miller-resistant, but uncontrolled ringing can exceed 4.5 V/ns dv/dt limit and trigger parasitic turn-on in half-bridge configurations.

Can STP7NK80Z replace STB7NK80Z-1 in I²PAK-based designs?

No. Though electrically identical, STB7NK80Z-1 uses I²PAK (TO-262) with different thermal resistance (R_thJC = 1.0 °C/W vs. TO-220's 1.0 °C/W), but distinct footprint, solder pad layout, and mounting torque. Direct replacement requires PCB redesign - thermal performance is similar, but mechanical fit is not interchangeable.