STMicroelectronics STP7NK80ZFP

Overview

STP7NK80ZFP from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 1.5 Ω typical R_DS(on), and 5.2 A continuous drain current at T_C = 25 °C in TO-220FP package. It delivers high dv/dt immunity (4.5 V/ns), 100% avalanche tested ruggedness, and low gate charge (40–56 nC) for hard-switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STP7NK80ZFP datasheet, STP7NK80ZFP pinout, STP7NK80ZFP application, or STP7NK80ZFP equivalent, key selection criteria include its 800 V blocking capability, TO-220FP insulated package with 2.5 kV RMS isolation, avalanche energy rating of 210 mJ, and Zener-protected gate enabling robust gate drive in noisy high-voltage environments.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dynamic ruggedness. Its optimized cell layout ensures stable operation under high di/dt (200 A/μs) and fast reverse recovery (t_rr = 530 ns, Q_rr = 3.31 μC) during inductive turn-off.

The TO-220FP variant integrates an electrically isolated tab (V_ISO = 2.5 kV RMS), eliminating need for insulating washers in heatsink mounting. Gate threshold voltage (3.0–4.5 V) and low C_iss (1138 pF) support clean switching with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Pinout & Package

STP7NK80ZFP uses the TO-220FP (Full-Pak) package: electrically insulated plastic case with metal tab, 3-pin vertical lead frame, and creepage/clearance compliant with reinforced insulation requirements. Tab is internally connected to source (S), providing thermal path while isolating high-voltage drain node.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP8NK80ZFP, STP7NK80ZFP trades 1.3 A current headroom and 0.3 Ω lower R_DS(on) for tighter gate charge control (56 nC vs. 65 nC) and identical ruggedness; versus FQP8N80C, it adds 2.5 kV isolation and integrated gate protection at modest cost premium - essential for certified industrial systems.

Availability

STP7NK80ZFP is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver primary switches, and offline switch-mode power adapters requiring stable component supply, long-term lifecycle assurance, and certified insulation performance.

Supply support for STP7NK80ZFP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs with manufacturing in Europe and Asia.

This device belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability offline switching applications demanding 600–1000 V blocking capability, avalanche robustness, and simplified thermal/mechanical integration.

FAQ

What is the maximum allowable gate-source voltage for STP7NK80ZFP?

The absolute maximum V_GS is ±30 V, but the device incorporates an integrated Zener diode that clamps gate-to-source voltage to approximately ±20 V under overvoltage conditions. For reliable operation, gate drive should be limited to 10–15 V for enhancement and –5 to 0 V for turn-off, per the datasheet's recommended operating conditions.

Can STP7NK80ZFP replace STP7NK80Z in an existing TO-220 design?

No - STP7NK80ZFP uses the TO-220FP package with electrically insulated tab, whereas STP7NK80Z uses standard TO-220 with conductive tab. Mechanical mounting, heatsink isolation, and PCB footprint differ significantly. Direct replacement requires redesign of thermal interface, creepage/clearance layout, and gate drive grounding scheme.

What is the significance of "100% avalanche tested" in the datasheet?

Each STP7NK80ZFP unit undergoes individual unclamped inductive switching (UIS) stress test at 210 mJ, verifying ability to absorb inductive energy without failure. This guarantees design margin in flyback, forward, and resonant converters where voltage overshoot occurs during switch turn-off - eliminating reliance on statistical process qualification.

How does the TO-220FP package affect thermal performance compared to TO-220?

TO-220FP has higher junction-to-case thermal resistance (R_thJC = 4.2 °C/W) than standard TO-220 (1.0 °C/W) due to internal insulation layers, but provides 2.5 kV RMS isolation. Effective thermal design requires using the full tab area for heatsink contact and accounting for reduced heat transfer efficiency - derating I_D to 3.3 A at T_C = 100 °C is mandatory per datasheet limits.