STMicroelectronics STP7NM80

Overview

STP7NM80 from STMicroelectronics is an N-channel 800 V, 6.5 A Power MOSFET in DPAK (TO-252) package, featuring 0.95 Ω typical R_DS(on), 18 nC total gate charge, and 100% avalanche tested performance. It delivers high dv/dt immunity and low input capacitance for robust high-voltage switching in offline SMPS and industrial motor drives.

For engineers reviewing the STP7NM80 datasheet, STP7NM80 pinout, STP7NM80 application, or STP7NM80 equivalent, this page provides verified electrical ratings, thermal data, dynamic switching parameters, and real-world design context for high-reliability 800 V power conversion systems.

Technical Context

This MDmesh™-based MOSFET uses ST's proprietary strip layout and multiple drain process to achieve ultra-low on-resistance while maintaining high breakdown voltage. Its 1.4 °C/W junction-to-case thermal resistance and 240 mJ single-pulse avalanche energy support sustained operation under repetitive unclamped inductive loads.

The device exhibits 620 pF input capacitance, 15 pF reverse transfer capacitance, and fast switching with 20 ns turn-on delay and 35 ns turn-off delay at 400 V/3.25 A - enabling high-frequency operation with minimized switching losses in flyback and resonant converters.

Key Specifications

Pinout & Package

DPAK (TO-252) package: surface-mount, 3-terminal, thermally enhanced plastic housing with exposed drain tab for low-inductance, high-current routing and efficient heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STF7NM80, STP7NM80 offers superior thermal performance in surface-mount layouts due to lower R_thJA on FR-4; compared with IPP70N10S5-1R1, it is the sole option meeting 800 V requirements - making it irreplaceable in universal-input offline power stages.

Availability

STP7NM80 is available at Aetrix Electronics and suitable for industrial motor drives, offline SMPS, UPS systems, and AC-DC rectifier stages requiring stable component supply across long-lifecycle production programs.

Supply support for STP7NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for energy-efficient, compact, and reliable high-voltage switching in offline power conversion and motor control applications.

FAQ

What is the maximum safe operating voltage for STP7NM80 in continuous DC operation?

The absolute maximum drain-source voltage (V_DS) is 800 V, and the device is rated for continuous DC operation up to this level when T_J ≤ 150 °C and SOA limits are observed. Derating is required above 25 °C case temperature per the SOA curve in Figure 1 of DS4854.

Does STP7NM80 include an integrated body diode, and what are its recovery characteristics?

Yes, it features an integral source-drain diode with 6.5 A continuous forward current rating, 1.3 V typical forward voltage at 6.5 A, and 460–680 ns reverse recovery time depending on di/dt and V_DD. Recovery charge (Q_rr) is 4–6 μC, supporting moderate-frequency synchronous rectification.

Can STP7NM80 be used in parallel configurations, and what layout considerations apply?

Parallel operation is feasible but requires matched gate drive paths, symmetrical PCB copper pours, and individual gate resistors to ensure current sharing. Thermal coupling via shared heatsink or copper plane is essential; mismatched R_DS(on) and temperature coefficients necessitate <5% gate resistance tolerance and Kelvin source routing.

What is the recommended gate drive voltage range, and why is ±30 V specified as absolute maximum?

The gate threshold voltage (V_GS(th)) ranges from 3–5 V, and optimal enhancement occurs at V_GS = 10 V. The ±30 V absolute maximum rating protects against ESD and transient overshoot; exceeding +20 V risks gate oxide degradation, while negative voltage beyond –10 V may cause unintended turn-on via capacitive coupling in high-dv/dt layouts.