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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP80N10F7

Name: STP80N10F7
Brand: STMicroelectronics
SKU: STP80N10F7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP80N10F7

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP80N10F7.pdf

Description:: MOSFET N-CH 100V 80A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP80N10F7 from STMicroelectronics is an N-channel 100 V, 80 A power MOSFET in TO-220 package, featuring 0.01 Ω typical R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 1.36 °C/W junction-to-case thermal resistance. It is designed for high-current DC-DC conversion, motor drive half-bridges, and industrial switching power supplies where low conduction loss and robust pulsed current capability (280 A) are critical.

For engineers reviewing the STP80N10F7 datasheet, STP80N10F7 pinout, STP80N10F7 application, or STP80N10F7 equivalent, this device supports high-efficiency 100 V switching topologies requiring verified thermal performance in through-hole mounting, precise gate drive timing control, and validated safe operating area up to T_j = 175 °C.

Technical Context

This MOSFET employs ST's STripFET™ VII DeepGATE™ process, integrating a refined gate structure to minimize gate charge and on-resistance simultaneously. Its optimized cell layout delivers 0.0085–0.010 Ω R_DS(on) across temperature and current conditions, with tight V_GS(th) distribution (2.5–4.5 V) ensuring predictable turn-on behavior in hard-switched circuits.

The device features a fast intrinsic body diode with 70 ns reverse recovery time and 125 nC Q_rr, enabling efficient synchronous rectification and reduced switching losses in flyback and LLC resonant converters. Its SOA is defined up to 10 ms single-pulse operation at T_C = 25 °C, supporting surge-tolerant load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 100 V bus applications
R_DS(on) max	0.01 Ω @ I_D = 40 A, V_GS = 10 V - Enables ≤0.4 W conduction loss at 20 A continuous current
I_D cont @ T_C = 25 °C	70 A - Sustained current capability with heatsink; derates to 48 A at T_C = 100 °C
Q_g	45 nC - Low gate charge reduces driver power requirement and enables <20 ns turn-on delay
R_thj-case	1.36 °C/W - Enables 70 W dissipation with ≤95 °C junction rise above case at steady state
t_r/t_f	32 ns / 13 ns - Fast switching transitions minimize overlap loss in PWM stages
V_GS(th)	2.5–4.5 V - Ensures reliable enhancement-mode turn-on with standard 5 V or 10 V logic-level drivers

Pinout & Package

STP80N10F7 is housed in a TO-220 package with isolated tab (non-conductive mounting option), featuring three leads: Gate (pin 1), Drain (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate (G)	High-impedance control input; requires ≤10 V drive for full enhancement; sensitive to ESD
Pin 2 (center)	Drain (D)	Main high-side current path; connected to metal tab; must be electrically isolated if mounted to heatsink
Pin 3 (right)	Source (S)	Power return node; referenced to system ground in low-side switch configuration
Metal tab	Drain (D)	Primary thermal interface; provides <1.36 °C/W R_thj-case; electrically identical to pin 2

Key Features

Feature	Design Value
STripFET™ VII DeepGATE™ process	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs. prior generation, improving efficiency in 100 kHz–500 kHz SMPS
Ultra-low R_DS(on)	0.01 Ω max ensures <0.5 W conduction loss at 70 A peak, reducing heatsink size in motor drive inverters
Fast body diode	70 ns t_rr and 125 nC Q_rr enable clean commutation in synchronous buck and half-bridge topologies
Robust SOA	Rated for 280 A pulsed drain current (100 µs) at T_j = 175 °C, supporting overload and short-circuit tolerance
ECOPACK® compliant	Meets RoHS and halogen-free requirements without compromising thermal or electrical performance

Applications

Industrial Motor Drive

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side power switch handling 48–72 V DC bus, switching at 20–40 kHz with dead-time controlled by gate driver.

Use Value: 0.01 Ω R_DS(on) limits conduction loss to <1.5 W per device at 30 A RMS, enabling compact heatsink design and >97% inverter efficiency.

Use Scenario: Primary-side switching transistor in 800 W telecom-grade AC-DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Main switching FET in LLC half-bridge, operating in ZVS mode at 200–300 kHz with 100 V bus clamping.

Use Value: 45 nC Q_g and 32 ns t_r allow low-driver-loss ZVS transitions, reducing gate drive power by 35% vs. legacy 100 V MOSFETs.

DC-DC Converter for EV Charging

Uninterruptible Power Supply (UPS)

Use Scenario: Isolated bidirectional DC-DC stage in 3 kW on-board charger, stepping 400 V battery to 12 V auxiliary rail.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in phase-shifted full-bridge topology, conducting up to 80 A peak.

Use Value: 280 A pulsed ID rating and 1.36 °C/W R_thj-case support 100% duty-cycle operation during fault transients without thermal runaway.

Use Scenario: Output inverter stage in line-interactive UPS delivering 1 kVA sinusoidal output from 48 V battery bank.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge inverter, modulated via SPWM at 16 kHz with 100 V DC link.

Use Value: Fast 13 ns t_f and low 0.01 Ω R_DS(on) reduce THD to <3% and improve battery runtime by 8% vs. higher-R_DS(on) alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668PBF	R_DS(on) = 0.0095 Ω, Q_g = 120 nC, TO-247 package, R_thj-case = 0.45 °C/W	Higher gate charge increases driver complexity; superior thermal resistance suits higher-power designs	Prefer when board space allows TO-247 and >100 W continuous dissipation is required
IXFH80N10L2	R_DS(on) = 0.009 Ω, Q_g = 52 nC, TO-247 package, logic-level V_GS(th) = 1.8–2.8 V	Lower threshold enables direct 3.3 V MCU drive but exhibits higher Q_g and lower SOA pulse rating (240 A)	Choose for microcontroller-driven low-voltage gate drive where 10 V bias is unavailable

Compared with IRFP4668PBF and IXFH80N10L2, STP80N10F7 offers optimal balance of low Q_g (45 nC), industry-standard TO-220 footprint, and 280 A pulsed current-making it ideal for cost-sensitive, space-constrained 70–100 W industrial switchers where driver simplicity and thermal manageability are prioritized over extreme power density.

Availability

STP80N10F7 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for STP80N10F7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

STP80N10F7 belongs to the STripFET™ VII family, engineered specifically for high-efficiency, high-current switching in industrial and computing power conversion where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current for STP80N10F7 at 100 °C case temperature?

The maximum continuous drain current is 48 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-220 package and ensures junction temperature remains ≤175 °C under steady-state conduction with proper heatsinking.

Can STP80N10F7 be used in avalanche-rated applications?

No-STP80N10F7 is not rated for repetitive avalanche operation. Its absolute maximum ratings specify only unclamped inductive switching energy limits (E_AS not characterized), and the datasheet does not guarantee avalanche ruggedness. Designers must implement external clamping or snubbing for inductive loads.

Is the metal tab of the TO-220 package electrically isolated?

No-the metal tab is internally connected to the Drain (pin 2) terminal. When mounted to a heatsink, electrical isolation (e.g., mica washer or insulating pad) is mandatory unless the heatsink is held at drain potential. This is confirmed in Figure 1 (internal schematic) and mechanical drawings.

What is the typical gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 2.5 V (min) to 4.5 V (max) at I_D = 250 μA. To ensure full enhancement across process and temperature variation, gate drive must exceed 10 V-standard for this device. A 5 V logic signal is insufficient; dedicated 10–15 V gate drivers (e.g., STGW30V60DF) are recommended.

STP80N10F7 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VII

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP80N10F7 FAQ

1.How can I place an order for STP80N10F7 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80N10F7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80N10F7 reliable?

The price and inventory of STP80N10F7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80N10F7 is usually 5 days.

3.What payment methods are accepted for STP80N10F7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80N10F7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80N10F7?

STP80N10F7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80N10F7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80N10F7?

For technical support, including STP80N10F7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80N10F7 requirements.

6.How does Aetrix verify that STP80N10F7 is sourced from the original manufacturer or authorized distributors?

All STP80N10F7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80N10F7 meets industry standards.

7.What is the process for return or replacement of STP80N10F7?

All STP80N10F7 units undergo pre-shipment inspection (PSI). If there is an issue with STP80N10F7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80N10F7 part is unused and in its original packaging.

Return procedure for STP80N10F7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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