STMicroelectronics STP80N1K1K6

Overview

STP80N1K1K6 from STMicroelectronics is an N-channel 800 V, 1.1 Ω (max) superjunction Power MOSFET in TO-220 package, designed for high-voltage flyback converters and LED lighting drivers. It delivers 5 A continuous drain current at 25 °C, features 100% avalanche testing, Zener gate protection, and ultra-low 5.7 nC total gate charge - enabling high-efficiency, compact power supplies for adapters and AIO systems.

For engineers reviewing the STP80N1K1K6 datasheet, STP80N1K1K6 pinout, STP80N1K1K6 application, or STP80N1K1K6 equivalent, key selection criteria include its 800 V breakdown voltage, 1.1 Ω R_DS(on), 5.7 nC Q_g, 1.5 A repetitive avalanche current, and TO-220 thermal resistance of 2 °C/W junction-to-case.

Technical Context

This MDmesh K6 MOSFET uses ST's 20-year superjunction architecture to minimize R_DS(on) × area and figure-of-merit (FOM), targeting high-power-density SMPS designs. Its 60 mJ single-pulse avalanche energy and 120 V/ns dv/dt ruggedness support robust operation in unclamped inductive switching.

The device integrates a Zener-protected gate and exhibits low C_oss (4.5 pF typ.) and Co(er) (7 pF), reducing switching losses. Its source-drain diode shows 217 ns reverse recovery time at 25 °C and 333 ns at 150 °C, with 1.7 µC Q_rr, making it suitable for quasi-resonant and hard-switched topologies.

Key Specifications

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Tab is electrically connected to drain for direct heatsink coupling and thermal path optimization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Compared with STP7NK80ZFP and IPP60R190C7, STP80N1K1K6 uniquely balances 800 V rating, ultra-low 1.1 Ω on-resistance, and industry-leading 5.7 nC gate charge - making it optimal for compact, high-efficiency flyback converters where voltage margin and thermal performance are critical.

Availability

STP80N1K1K6 is available at Aetrix Electronics and suitable for flyback converters, AC/DC adapters for tablets and notebooks, and LED lighting drivers requiring stable component supply across production lifecycles.

Supply support for STP80N1K1K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh K6 superjunction Power MOSFET product line, engineered specifically for high-voltage, high-efficiency offline power conversion where minimal R_DS(on) × area and gate charge are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP80N1K1K6 supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS14299. This derating reflects thermal limits imposed by the TO-220 package's 2 °C/W junction-to-case resistance and safe operating area constraints at elevated temperatures.

Is the drain tab electrically isolated from the package mount surface?

No - the metal tab (Pin 2) is internally connected to the drain terminal and is not electrically isolated. When mounted to a heatsink, the heatsink must be insulated or referenced to drain potential to prevent short circuits in grounded-chassis designs.

Does this MOSFET include integrated gate protection beyond the Zener diode?

Yes - the device integrates a monolithic Zener diode between gate and source to clamp V_GS to ±30 V, protecting against ESD and overvoltage transients. No external gate resistor or TVS is required for basic protection, though layout-dependent ringing may still warrant a small series gate resistor.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C?

At T_J = 150 °C, the body diode exhibits Q_rr = 2.3 µC under test conditions of I_SD = 5 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 7). This value is 35% higher than the 25 °C value (1.7 µC), reflecting increased minority carrier lifetime at elevated temperature.