STMicroelectronics STP80N20M5

Overview

STP80N20M5 from STMicroelectronics is an N-channel 200 V, 15 mΩ (typ), 65 A Power MOSFET in TO-220 package, based on MDmesh™ M5 vertical process technology. It delivers extremely low R_DS(on), low gate charge (108 nC), and 100% avalanche-tested ruggedness for high-efficiency switching in industrial power supplies, motor drives, and DC-DC converters.

For engineers reviewing the STP80N20M5 datasheet, STP80N20M5 pinout, STP80N20M5 application, or STP80N20M5 equivalent, key selection criteria include its 200 V V_(BR)DSS, 65 A continuous drain current at T_C = 25 °C, 15–20 mΩ R_DS(on) at V_GS = 10 V, 190 W P_TOT, and 500 mJ E_AS single-pulse avalanche energy - all critical for hard-switched, high-current power stages.

Technical Context

This MOSFET employs ST's MDmesh™ M5 silicon architecture to minimize conduction and switching losses simultaneously. Its optimized cell layout achieves low R_DS(on) × Q_g figure-of-merit (≈1.6 Ω·nC), enabling high-frequency operation with reduced gate drive loss and improved thermal efficiency.

The integrated body diode features fast reverse recovery (t_rr = 178 ns @ T_j = 25 °C, 219 ns @ 150 °C) and low Q_rr (1.4–2.1 µC), supporting synchronous rectification and ZVS/ZCS topologies. The device is rated for repetitive avalanche operation up to 20 A and withstands dv/dt up to 15 V/ns under specified conditions.

Key Specifications

Pinout & Package

STP80N20M5 uses a TO-220 package with 3 leads: Drain (Tab), Gate (Pin 1), Source (Pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from chassis unless circuit topology requires common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V Power MOSFET applications.

Compared with STB80N20M5, STP80N20M5 trades 0.21 °C/W higher thermal resistance for through-hole mechanical robustness and serviceability; versus IPP60R190C7, it delivers 12.7× lower R_DS(on) at half the voltage rating - making it optimal for cost-sensitive, high-current 200 V bus applications.

Availability

STP80N20M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, motor drive half-bridge stages, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP80N20M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STP80N20M5 belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications where low R_DS(on), rugged avalanche capability, and fast body diode recovery are essential.

FAQ

What is the maximum safe operating area (SOA) for STP80N20M5 at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited by R_DS(on) and thermal constraints: maximum continuous drain current drops to 41 A, and single-pulse ID is restricted to 232 A for pulse widths ≤10 μs. The device remains within SOA up to 160 V × 41 A = 6.56 kW for short pulses, but sustained operation above 100 °C requires derating per Figure 1 in DS6286 Rev 3.

Does STP80N20M5 require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No - STP80N20M5 has a ±25 V gate-source rating and exhibits robust immunity to false turn-on; its 15 V threshold voltage (V_GS(th) = 3–5 V) and low Crss (50 pF) ensure stable off-state operation even with dv/dt up to 15 V/ns. A 0 V to 10 V gate drive is sufficient; negative bias is unnecessary unless system-level noise exceeds 10 V/ns.

Can STP80N20M5 replace STP75NF75 in an existing 75 V design?

No - STP75NF75 is a 75 V, 75 A device with different R_DS(on) (10.5 mΩ), gate charge (120 nC), and avalanche rating (E_AS = 1200 mJ). STP80N20M5's 200 V rating, 20 mΩ R_DS(on), and 500 mJ E_AS make it incompatible for direct substitution; using it in a 75 V system would increase conduction loss by ~90% and reduce efficiency without providing voltage-margin benefit.

Is the TO-220 tab of STP80N20M5 internally connected to the Drain terminal?

Yes - the metal tab is electrically and thermally connected to the Drain (D) terminal, as confirmed by pinout D(2, TAB), G(1), S(3) and mechanical drawings in DS6286 Rev 3 Section 4.3. This requires electrical isolation (e.g., mica washer + shoulder washer) when mounting to a grounded heatsink to prevent short-circuiting the drain node.