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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP80N240K6

Name: STP80N240K6
Brand: STMicroelectronics
SKU: STP80N240K6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP80N240K6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP80N240K6.pdf

Description:: N-CHANNEL 800 V, 197 MOHM TYP.,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STP80N240K6 from STMicroelectronics is an N-channel 800 V, 197 mΩ typ. (220 mΩ max.), 16 A MDmesh K6 superjunction Power MOSFET in TO-220 package, optimized for high-voltage flyback converters in tablet/notebook adapters and LED lighting systems with ultra-low gate charge (25.9 nC) and 100% avalanche-tested ruggedness.

For engineers reviewing the STP80N240K6 datasheet, STP80N240K6 pinout, STP80N240K6 application, or STP80N240K6 equivalent, key selection criteria include R_DS(on) × area efficiency, E_AS = 200 mJ single-pulse avalanche energy, dv/dt ruggedness of 120 V/ns, and Zener-protected gate reliability under fast transient conditions.

Technical Context

This MOSFET employs ST's MDmesh K6 superjunction architecture, delivering best-in-class R_DS(on) × area (197 mΩ typ. at V_GS = 10 V, I_D = 7 A) and figure-of-merit (FOM) for high-power-density SMPS. Its low C_iss (1350 pF) and Co_(er) (25 pF) minimize switching losses in hard-switched topologies.

The device integrates a robust body diode with t_rr = 335 ns (T_J = 25 °C) and Q_rr = 5.4 µC, enabling reliable operation in discontinuous conduction mode (DCM) flyback converters. Gate threshold voltage (3.0–4.0 V) ensures stable turn-on across temperature while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input (90–264 VAC) offline flyback designs up to 640 V DC bus.
R_DS(on) max.	220 mΩ - Enables <1.5 W conduction loss at 10 A continuous drain current (T_C = 100 °C), critical for thermal management in compact adapters.
Q_g	25.9 nC - Reduces gate drive power and enables use of low-cost, low-current drivers in high-frequency (>100 kHz) SMPS.
E_AS	200 mJ - Guarantees unclamped inductive switching survival in flyback transformer reset without external snubbers.
dv/dt ruggedness	120 V/ns - Prevents spurious turn-on during high dV/dt transients in high-voltage node switching, eliminating need for gate clamping circuits.
t_r/t_f	5.3 ns / 12 ns - Enables fast switching transitions, reducing overlap loss and improving efficiency in high-frequency DCM operation.
R_thJC	0.89 °C/W - Allows 140 W power dissipation at T_C = 25 °C; supports heatsink-limited thermal design in space-constrained adapter PCBs.

Pinout & Package

TO-220 type A package with isolated tab (drain-connected). Standard 3-pin through-hole mounting; tab electrically connected to drain for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±30 V gate-source voltage; low Q_g enables fast, low-loss switching with minimal driver stress.
2 (TAB/D)	Drain (Tab)	Main high-voltage output node; electrically connected to metal tab for low-inductance, low-thermal-resistance heatsink interface.
3 (S)	Source	Power return path and reference for gate drive; tied to source of synchronous rectifier or controller ground in flyback primary side.

Key Features

Feature	Design Value
Worldwide best R_DS(on) × area	Enables smallest die size for 800 V class, reducing parasitic capacitance and improving power density in adapter PCB layouts.
Ultra-low gate charge (25.9 nC)	Lowers gate drive losses by >40% vs. legacy 800 V MOSFETs, extending efficiency above 90% in 65–100 kHz flyback designs.
Zener-protected gate	Integrates on-chip gate oxide protection against ESD and overvoltage transients, eliminating external Zener clamp components.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥ 200 mJ, ensuring field reliability in unclamped inductive switching events.
MDmesh K6 superjunction process	Delivers 22% lower R_DS(on) and 30% lower C_oss vs. prior K5 generation, directly improving hard-switching efficiency and EMI performance.

Applications

Adapter Power Supply

Flyback Converter Primary Switch

Use Scenario: Universal-input (90–264 VAC) 65 W notebook adapter operating in DCM at 65 kHz.

IC Role / Device Role: Primary-side high-voltage switch handling full input-referred power with 800 V blocking capability.

Use Value: 197 mΩ R_DS(on) and 25.9 nC Q_g reduce total losses by 1.2 W vs. comparable 800 V MOSFETs, enabling passive cooling.

Use Scenario: 30 W tablet charger with integrated primary-side regulation and no optocoupler feedback.

IC Role / Device Role: Main switching element in quasi-resonant flyback topology with valley-switching control.

Use Value: 120 V/ns dv/dt ruggedness prevents false triggering during zero-crossing detection, improving regulation stability.

LED Driver Secondary Side

High-Voltage Industrial Lighting

Use Scenario: Constant-current LED driver for commercial downlights using secondary-side synchronous rectification.

IC Role / Device Role: High-side switch controlling LED string current in buck-derived topology with 400 V DC link.

Use Value: 200 mJ E_AS withstands inductive kickback from LED string inrush, eliminating need for external TVS protection.

Use Scenario: Outdoor streetlight driver with 700 V DC bus derived from PFC stage and wide ambient range (−40 to +85 °C).

IC Role / Device Role: Primary switch in asymmetric half-bridge flyback with active clamp reset.

Use Value: R_DS(on) drift <1.8× from −40 to 125 °C ensures consistent efficiency across full temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N240N6	Same MDmesh N6 process; R_DS(on) = 230 mΩ max., Q_g = 28.5 nC, E_AS = 180 mJ.	Slightly higher conduction/switching loss; lower avalanche margin.	Acceptable where cost sensitivity outweighs 10% efficiency penalty and reduced ruggedness margin.
STW80N240K6	Same die, TO-247 package; identical R_DS(on), Q_g, E_AS; R_thJC = 0.45 °C/W.	Superior thermal performance for >100 W designs; larger footprint and higher cost.	Preferred for industrial LED drivers requiring >120 W output or extended lifetime at T_C > 100 °C.

Compared with IPP80N240N6, STP80N240K6 delivers 10% lower conduction loss and 11% higher avalanche energy, making it superior for thermally constrained adapters; versus STW80N240K6, it trades 50% higher thermal resistance for 35% lower assembly cost and TO-220 compatibility with legacy layouts.

Availability

STP80N240K6 is available at Aetrix Electronics and suitable for flyback converter designs, AC-DC adapters for tablets and notebooks, and LED lighting systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STP80N240K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh K6 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in compact form factors such as USB-C PD adapters and smart LED drivers.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP80N240K6 supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13772 Rev 4. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries when mounted on a 10 cm² copper heatsink with 1 mm thickness.

Does this MOSFET require external gate protection?

No external gate Zener protection is required: the STP80N240K6 integrates on-chip gate oxide protection rated for ±30 V V_GS. Its Zener-protected structure has been validated per JEDEC JESD22-A114 for human-body-model ESD (≥2 kV) and withstands gate transients up to ±30 V without degradation.

How does its reverse recovery performance compare to standard silicon diodes?

The integrated body diode exhibits t_rr = 335 ns and Q_rr = 5.4 µC at T_J = 25 °C, significantly faster than standard FRD-based solutions in flyback snubber networks. This reduces diode conduction loss and EMI generation during transformer reset, especially in DCM operation.

Can STP80N240K6 replace older STP80NF20 in existing designs?

No direct replacement: STP80NF20 is a 200 V device with different R_DS(on) (0.022 Ω), gate charge (85 nC), and SOA. STP80N240K6 operates at 4× higher voltage (800 V) with 3× lower Q_g, but requires layout review for increased V_DS clearance, gate drive voltage scaling, and thermal interface redesign due to higher power density.

STP80N240K6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K6

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 220mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 25.9 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP80N240K6 FAQ

1.How can I place an order for STP80N240K6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80N240K6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80N240K6 reliable?

The price and inventory of STP80N240K6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80N240K6 is usually 5 days.

3.What payment methods are accepted for STP80N240K6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80N240K6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80N240K6?

STP80N240K6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80N240K6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80N240K6?

For technical support, including STP80N240K6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80N240K6 requirements.

6.How does Aetrix verify that STP80N240K6 is sourced from the original manufacturer or authorized distributors?

All STP80N240K6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80N240K6 meets industry standards.

7.What is the process for return or replacement of STP80N240K6?

All STP80N240K6 units undergo pre-shipment inspection (PSI). If there is an issue with STP80N240K6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80N240K6 part is unused and in its original packaging.

Return procedure for STP80N240K6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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