STMicroelectronics STP80N450K6

Overview

STP80N450K6 from STMicroelectronics is an N-channel 800 V, 380 mΩ (typ.) MDmesh K6 Power MOSFET in TO-220 package, designed for high-voltage flyback converters and LED lighting drivers. It delivers 10 A continuous drain current at 25 °C, features 17.3 nC total gate charge and 100 mJ single-pulse avalanche energy, enabling compact, high-efficiency power supplies for notebook adapters and all-in-one PCs.

For engineers reviewing the STP80N450K6 datasheet, STP80N450K6 pinout, STP80N450K6 application, or STP80N450K6 equivalent, key selection criteria include R_DS(on) × area optimization, dv/dt ruggedness (120 V/ns), Zener-protected gate, 100% avalanche testing, and low C_oss (8 pF) for reduced switching loss in high-frequency SMPS designs.

Technical Context

This MOSFET employs ST's MDmesh K6 super-junction technology, achieving best-in-class figure of merit (R_DS(on) × Q_g) and ultra-low gate charge. Its 800 V breakdown voltage and 5 V/ns diode recovery dv/dt rating support robust operation in discontinuous conduction mode (DCM) flyback topologies.

The device integrates a Zener-protected gate structure and exhibits 1.22 °C/W junction-to-case thermal resistance. Its source-drain diode shows 1.5 V forward voltage at 10 A and 275 ns reverse recovery time at 25 °C - critical for minimizing body diode losses in quasi-resonant converters.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (drain-connected). Standard 3-pin through-hole mounting; tab serves as electrical and thermal connection to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP75N75F7 and IPP65R095C7, STP80N450K6 uniquely combines 800 V rating, Zener gate protection, and industry-leading R_DS(on) × Q_g FOM-making it the sole choice for compact, surge-immune, universal-input flyback designs without external protection circuitry.

Availability

STP80N450K6 is available at Aetrix Electronics and suitable for flyback converters, LED lighting drivers, and notebook adapters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for STP80N450K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and sales operations across Europe, Asia, and the Americas.

This device belongs to the MDmesh K6 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS in consumer and industrial applications demanding 800 V capability and robust avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP80N450K6 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS14074. This derating reflects thermal limits of the TO-220 package and ensures safe operation within SOA boundaries when mounted on a heatsink with adequate thermal interface.

Is the gate-source Zener protection integrated or external?

The Zener protection is fully integrated into the silicon die-no external components required. The gate oxide is protected by an internal bidirectional Zener clamp rated at ±30 V, verified per JEDEC JESD22-A114 and confirmed in the "Features" section of the datasheet.

Can STP80N450K6 replace STP80NF55 in existing designs?

No-STP80NF55 is a 55 V device with different pinout (G-D-S vs. G-S-D) and incompatible voltage rating. Direct replacement would cause catastrophic failure. Migration requires full circuit redesign, including gate drive, snubber, and transformer turns ratio adjustments.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C?

At T_J = 150 °C, Q_rr is 8.7 µC under test conditions of I_SD = 10 A, di/dt = 100 A/µs, and V_DD = 60 V (Table 7, footnote 2). This value is 2.4× higher than at 25 °C (3.6 µC), directly impacting EMI and switching loss in QR flyback designs.