STMicroelectronics STP80N600K6

Overview

STP80N600K6 from STMicroelectronics is an N-channel 800 V, 515 mΩ typ. (600 mΩ max), 7 A MDmesh K6 superjunction Power MOSFET in TO-220 package, optimized for high-voltage flyback converters in compact adapters and LED lighting. It delivers ultra-low gate charge (10.7 nC), 100% avalanche tested ruggedness (EAS = 85 mJ), and Zener-protected gate.

For engineers reviewing the STP80N600K6 datasheet, STP80N600K6 pinout, STP80N600K6 application, or STP80N600K6 equivalent, key selection criteria include R_DS(on) × area efficiency, dv/dt ruggedness (120 V/ns), diode recovery performance (Q_rr = 2.5 µC), and thermal resistance (R_thJC = 1.46 °C/W) in high-density power designs.

Technical Context

This MOSFET employs ST's MDmesh K6 superjunction architecture, enabling best-in-class figure of merit (R_DS(on) × Q_g) and low output capacitance energy (E_OSS = 1 µJ at 400 V). Its 800 V V_(BR)DSS rating supports wide-input universal offline applications with margin against voltage transients.

The integrated Zener-protected gate withstands ±30 V stress, while the source-drain diode exhibits fast reverse recovery (t_rr = 235 ns at 25 °C) and low forward drop (V_SD = 1.5 V at 7 A), reducing switching losses in discontinuous conduction mode (DCM) flyback topologies.

Key Specifications

Pinout & Package

TO-220 type A package with isolated tab (Drain-connected), standard 3-pin configuration. Tab serves as thermal and electrical connection to Drain (D); leads are Gate (G), Drain (D), Source (S) per marking "D(2, TAB) G(1) S(3)".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPP60R600C7XKSA1, STP80N600K6 provides 100 V higher breakdown margin and 1.8 nC lower gate charge-critical for universal-input adapters. Versus STW80N60M6, it trades 114 W lower P_TOT for 30% smaller footprint and lower assembly cost in sub-80 W designs.

Availability

STP80N600K6 is available at Aetrix Electronics and suitable for flyback converters, tablet/notebook adapters, and LED lighting systems requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for STP80N600K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh K6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS where R_DS(on) × Q_g figure of merit and avalanche ruggedness are decisive.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STP80N600K6 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS14252. This derating reflects thermal limits under real-world heatsink conditions and must be verified using R_thJC = 1.46 °C/W and ambient constraints.

Is the source-drain diode suitable for synchronous rectification?

No-the integrated body diode is optimized for flyback freewheeling, not synchronous rectification. Its Q_rr = 2.5 µC and t_rr = 235 ns are typical for superjunction MOSFETs but exceed requirements for SR FETs; dedicated low-Q_rr devices are recommended for secondary-side synchronous rectification.

Does the TO-220 tab require electrical isolation from the heatsink?

Yes-the tab is internally connected to the Drain terminal. Unless the Drain node is system ground (e.g., in low-side configurations), a thermally conductive but electrically isolating pad (e.g., mica or ceramic) must be used between tab and heatsink to prevent short circuits and ensure safety compliance.

How does the 100% avalanche testing impact reliability in flyback applications?

Each STP80N600K6 undergoes individual unclamped inductive switching (UIS) test to guarantee E_AS ≥ 85 mJ. In flyback converters, this ensures survival during output short-circuit events, startup surges, or transformer saturation-eliminating infant mortality and supporting 10-year field reliability targets.