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STMicroelectronics STP80N70F4

Part No.:
STP80N70F4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSTP80N70F4.pdf
Description:
MOSFET N-CH 68V 85A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,081

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Product details

Overview

STP80N70F4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 68 V drain-source voltage, 8.2 mΩ typical on-resistance at VGS = 10 V, and 85 A continuous drain current at TC = 25 °C. It employs STripFET™ DeepGATE™ technology to minimize conduction loss and optimize switching performance in high-current DC-DC converters and motor drives.

For engineers reviewing the STP80N70F4 datasheet, STP80N70F4 pinout, STP80N70F4 application, or STP80N70F4 equivalent, key selection criteria include avalanche ruggedness (185 mJ single-pulse EAS), low gate charge (90 nC), thermal resistance (1 °C/W junction-to-case), and SOA-limited pulsed current capability (340 A).

Technical Context

This MOSFET uses a proprietary STripFET™ DeepGATE™ structure with optimized gate geometry to reduce RDS(on) while maintaining fast switching. Its 100% avalanche-rated design ensures robustness under inductive load switching transients without external snubbers.

The device delivers stable threshold voltage (2–4 V) and low temperature coefficient of on-resistance (RDS(on) increases only ~1.5× from 25 °C to 175 °C), enabling predictable performance across industrial temperature ranges and simplifying thermal derating calculations.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS68 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 40% margin.
RDS(on) typ.8.2 mΩ @ VGS = 10 V, ID = 40 A - Enables <1 W conduction loss at 40 A, reducing heatsink requirements.
ID cont.85 A @ TC = 25 °C - Sustains high-current loads in power supplies and inverters with adequate heatsinking.
Qg90 nC - Low gate drive energy reduces driver IC stress and switching losses in hard-switched topologies.
EAS185 mJ - Confirmed unclamped inductive switching capability enables reliable operation in relay/snubberless motor control.
Rthj-case1 °C/W max - Allows direct mounting to chassis or heatsink for efficient thermal management in TO-220 form factor.

Pinout & Package

Supplied in TO-220 type A package with isolated tab (drain-connected). Standard 3-pin through-hole configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (left)GateControl terminal; requires ≤±20 V drive; low input capacitance (Ciss = 5600 pF) eases gate driver selection.
Pin 2 (center/tab)DrainHigh-side switching node; electrically connected to metal tab-must be insulated from heatsink unless referenced to same potential.
Pin 3 (right)SourcePower return path; defines local ground reference for gate drive; carries full load current (85 A continuous).

Key Features

FeatureDesign Value
100% avalanche ratedGuaranteed 185 mJ single-pulse energy handling without degradation-eliminates need for external clamping in inductive switching.
Low gate charge90 nC total gate charge enables use of low-power gate drivers (e.g., TC4420) without compromising switching speed.
Very low RDS(on)8.2 mΩ typ. minimizes I²R losses in high-current paths, improving efficiency in 48 V telecom and UPS systems.
Enhancement-mode operationNormally-off behavior ensures safe default state during power-up or controller fault conditions.

Applications

DC-DC ConvertersMotor Drives

Use Scenario: High-efficiency synchronous buck converter in 48 V server power supply delivering up to 200 W.

IC Role / Device Role / Timing Role: High-side main switch handling 85 A peak current with 100 kHz PWM switching.

Use Value: 8.2 mΩ RDS(on) limits conduction loss to <2.8 W at 60 A, reducing thermal load on primary-side heatsink.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor controller for industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element commutating bidirectional motor current up to 85 A continuous.

Use Value: 100% avalanche rating withstands back-EMF spikes during abrupt motor stop, avoiding external TVS diodes.

Uninterruptible Power SuppliesIndustrial Inverters

Use Scenario: Battery-to-AC inverter stage in line-interactive UPS supporting 1 kVA output.

IC Role / Device Role / Timing Role: Output switch in H-bridge topology operating at 16–20 kHz with 340 A pulsed current capability.

Use Value: 340 A pulsed drain current (IDM) supports surge loads during generator start-up without SOA violation.

Use Scenario: Three-phase inverter module driving 3 kW induction motor in HVAC compressor system.

IC Role / Device Role / Timing Role: Phase-leg switch with integrated body diode used for freewheeling during PWM dead-time.

Use Value: 1.5 V forward voltage (VSD) at 85 A enables efficient freewheeling with minimal reverse recovery charge (Qrr = 4 nC).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFP4668PbFRDS(on) = 7.2 mΩ @ 10 V, VDSS = 65 V, Qg = 110 nCSlightly lower voltage rating; higher gate charge increases driver lossPreferred where lower on-resistance outweighs reduced voltage margin and higher drive power.
IXTH80N65X2VDSS = 650 V, RDS(on) = 12.5 mΩ @ 10 V, Qg = 125 nCDesigned for high-voltage AC-DC PFC; not suitable for 48 V systems due to excessive RDS(on)Only applicable in 400 V+ boost stages-not a functional substitute for STP80N70F4's 68 V/85 A target use case.

Compared with IRFP4668PbF and IXTH80N65X2, the STP80N70F4 uniquely balances 68 V rating, ultra-low 8.2 mΩ on-resistance, and 90 nC gate charge-making it optimal for high-current, medium-voltage industrial switching where thermal and drive efficiency are critical.

Availability

STP80N70F4 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and industrial inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for STP80N70F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The STripFET™ DeepGATE™ product line targets high-efficiency power conversion, emphasizing low RDS(on), rugged avalanche performance, and fast switching for industrial and computing power systems.

FAQ

Is STP80N70F4 suitable for surface-mount assembly?

No. STP80N70F4 is packaged exclusively in through-hole TO-220 type A with isolated drain tab. It lacks surface-mount variants (e.g., D2PAK or PowerFLAT) and requires mechanical mounting with screw or clip to heatsink. Reflow or wave soldering is not applicable.

What is the maximum safe operating temperature for continuous operation?

The junction temperature must not exceed 175 °C. With Rthj-case = 1 °C/W and TC = 100 °C, the device supports 60 A continuous current. Derating is linear beyond 25 °C case temperature-1 W/°C reduction in total dissipation ensures thermal safety per absolute maximum ratings table.

Does STP80N70F4 have a built-in body diode, and what are its recovery characteristics?

Yes-it features an integral source-drain diode with 85 A continuous forward current rating and 1.5 V forward voltage at 85 A. Reverse recovery time is 55 ns typical (Tj = 150 °C), with 4 nC recovered charge and 130 A peak reverse recovery current, enabling efficient freewheeling in bridge configurations.

Can STP80N70F4 replace older STP80NF55 or STP75NF75 in existing designs?

Yes-with verification. STP80N70F4 offers lower RDS(on) (8.2 mΩ vs. 14 mΩ for STP75NF75) and improved EAS (185 mJ vs. 120 mJ), but shares identical TO-220 pinout and gate drive requirements. Layout compatibility is confirmed; thermal and SOA margins improve, though gate drive timing may require minor adjustment due to lower Qg.

STP80N70F4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
DeepGATE™, STripFET™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
68 V
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
9.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

STP80N70F4 FAQ

1.How can I place an order for STP80N70F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80N70F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80N70F4 reliable?

The price and inventory of STP80N70F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80N70F4 is usually 5 days.

3.What payment methods are accepted for STP80N70F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80N70F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80N70F4?

STP80N70F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80N70F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80N70F4?

For technical support, including STP80N70F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80N70F4 requirements.

6.How does Aetrix verify that STP80N70F4 is sourced from the original manufacturer or authorized distributors?

All STP80N70F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80N70F4 meets industry standards.

7.What is the process for return or replacement of STP80N70F4?

All STP80N70F4 units undergo pre-shipment inspection (PSI). If there is an issue with STP80N70F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80N70F4 part is unused and in its original packaging.

Return procedure for STP80N70F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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