Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP80NE06-10

Name: STP80NE06-10
Brand: STMicroelectronics
SKU: STP80NE06-10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STP80NE06-10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: STP80NE06-10.pdf

Description:: MOSFET N-CH 60V 80A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,874

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STP80NE06-10 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 60 V V_DSS, 80 A continuous drain current at T_C = 25 °C, and typ. R_DS(on) = 8.5 mΩ at V_GS = 10 V. It features 100% avalanche tested ruggedness, 7 V/ns dv/dt capability, and is optimized for high-current switching in automotive solenoid drivers and DC-DC converters.

For engineers reviewing the STP80NE06-10 datasheet, STP80NE06-10 pinout, STP80NE06-10 application, or STP80NE06-10 equivalent, key selection criteria include its 150 W power dissipation at T_C = 25 °C, 1 °C/W junction-to-case thermal resistance, unclamped inductive switching robustness (E_AS = 250 mJ), and gate charge profile (Q_g = 140 nC) for hard-switched SMPS design.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based process to achieve high cell density and low on-resistance while maintaining tight parameter distribution. Its internal structure supports fast switching with t_r = 150–200 ns and t_f = 75–100 ns under resistive load conditions (V_DD = 30 V, R_G = 4.7 Ω).

The device integrates a robust intrinsic body diode with t_rr = 100 ns and Q_rr = 0.4 µC at T_j = 150 °C, enabling reliable operation in synchronous rectification and freewheeling applications where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V automotive and industrial bus systems.
R_DS(on) typ.	8.5 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 80 A, critical for thermally constrained motor drive PCBs.
I_D cont. @ T_C = 25 °C	80 A - Sustained current rating requiring heatsink mounting; derates to 57 A at 100 °C case temperature.
E_AS	250 mJ - Single-pulse avalanche energy at V_DD = 30 V, T_j = 25 °C; validates unclamped inductive load survivability in relay/solenoid snubberless designs.
Q_g	140 nC - Total gate charge at V_DD = 48 V, I_D = 80 A; determines driver strength requirement and switching loss trade-off in 100–500 kHz SMPS.
dv/dt Rating	7 V/ns - Peak diode recovery voltage slope tolerance; prevents spurious turn-on during fast commutation in half-bridge configurations.
R_thj-case	1 °C/W - Junction-to-case thermal resistance; enables precise heatsink sizing when mounted with thermal interface material.

Pinout & Package

TO-220 package: three-terminal through-hole plastic package with isolated tab (drain-connected), standard footprint (15.5 mm × 10.2 mm × 4.7 mm), and lead temperature rating of 300 °C for soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for drain current	Low-inductance connection point for PCB ground plane; ties to source of external driver IC in high-side switch layouts.
2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD-must be protected with series resistor and TVS in production designs.
3 (Drain)	Main current-carrying terminal (tab-connected)	Electrically tied to metal tab; requires insulating washer when mounted to heatsink to avoid chassis shorting in floating-ground systems.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 250 mJ without parameter shift-eliminates need for external clamping in solenoid flyback circuits.
Exceptional dv/dt capability	7 V/ns rating prevents false triggering during fast voltage transients in motor phase-leg switching, reducing gate driver complexity.
Low R_DS(on) with high packing density	8.5 mΩ achieved via ST's "Single Feature Size™" strip process-reduces conduction loss by >30% vs. legacy planar MOSFETs at same die area.
Application-oriented characterization	Tested under real-world conditions: unclamped inductive loads, pulsed di/dt = 300 A/µs, and 150 °C junction temperature-validates performance in automotive under-hood environments.

Applications

Solenoid & Relay Driver

Automotive Motor Control

Use Scenario: Driving 12 V/24 V fuel injectors or HVAC actuators with 50–100 ms on-time pulses and 100 A peak inrush.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling repetitive inductive turn-off stress without snubber components.

Use Value: Avalanche-rated operation eliminates need for external freewheeling diodes, reducing BOM count and PCB area in compact engine control units.

Use Scenario: Controlling brushed DC motors in power seats, window lifts, or cooling fans with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-loss main switch in H-bridge half-bridge stage, delivering 80 A continuous current with minimal thermal rise.

Use Value: 1 °C/W R_thj-case enables direct heatsink mounting without thermal vias-critical for space-constrained automotive modules.

DC-DC Converter Primary Switch

Audio Amplifier Output Stage

Use Scenario: 48 V input, 12 V output buck converter in telecom power supplies operating at 250 kHz with 30 A output current.

IC Role / Device Role / Timing Role: Hard-switched primary-side MOSFET with Q_g = 140 nC and t_on/t_off < 100 ns-optimized for ZVS-assisted topologies.

Use Value: Low C_oss (890–1100 pF) and Cr_ss (150–200 pF) minimize switching loss and ringing, improving efficiency above 92%.

Use Scenario: Class-D audio amplifier output stage delivering 100 W into 4 Ω load with THD+N < 0.1% at 1 kHz.

IC Role / Device Role / Timing Role: Fast-switching output transistor with t_r/t_f < 200 ns and low Q_rr (0.4 µC) to suppress dead-time distortion and EMI.

Use Value: Body diode t_rr = 100 ns ensures clean zero-crossing transitions-reducing audible artifacts and filter component stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ V_GS = 10 V; lower current rating (49 A); no avalanche rating specified	Limited to lower-power motor drives and non-automotive DC-DC where avalanche margin is not required	Select only if thermal budget allows higher conduction loss and system-level protection handles inductive spikes.
STP75NF75	V_DSS = 75 V; R_DS(on) = 12.5 mΩ; higher voltage headroom but 10% higher on-resistance	Better suited for 60 V nominal bus systems with transient overvoltage risk (e.g., ISO 7637-2 Pulse 5a)	Prefer when system must withstand 75 V transients without derating; accept minor efficiency penalty for enhanced reliability.

Compared with IRFZ44NPBF and STP75NF75, STP80NE06-10 delivers the lowest R_DS(on) (8.5 mΩ) at 60 V rating and verified avalanche robustness-making it optimal for high-current, thermally constrained automotive and industrial switching where failure modes must be eliminated at silicon level.

Availability

STP80NE06-10 is available at Aetrix Electronics and suitable for solenoid drivers, automotive motor control, and DC-DC converters requiring stable component supply across extended lifecycle programs.

Supply support for STP80NE06-10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for automotive, industrial, and consumer markets.

This MOSFET belongs to ST's "STripFET™ II" product line, engineered specifically for high-efficiency power conversion and rugged switching in harsh-environment applications including engine control, powertrain, and industrial automation.

FAQ

Is STP80NE06-10 suitable for surface-mount assembly?

No. STP80NE06-10 uses a through-hole TO-220 package with leads designed for wave or hand soldering. It lacks SMD-compatible footprint or thermal pad layout. For surface-mount alternatives, consider ST's STB80NF55-08 in D²PAK or STW80NE06 in TO-247.

What is the maximum gate-source voltage limit?

The absolute maximum V_GS is ±20 V per datasheet Table 3. Operation beyond this risks permanent gate oxide damage. Recommended drive voltage is 10 V for full enhancement; gate drivers must clamp to ≤15 V with fast transient suppression to prevent overshoot during switching.

Does STP80NE06-10 have a built-in ESD protection diode?

No. The device has no integrated gate protection circuitry. External gate protection-such as a 10 kΩ series resistor and bidirectional TVS (e.g., SMAJ15A) between gate and source-is mandatory in all production designs to prevent ESD-induced failure during handling or board assembly.

Can STP80NE06-10 replace STP75NF75 in existing designs?

Yes, with verification. Both share TO-220 package and pinout, but STP80NE06-10 has lower R_DS(on) (8.5 mΩ vs. 12.5 mΩ) and identical V_DSS (60 V). Thermal and gate drive requirements must be re-evaluated due to higher peak current capability and reduced conduction loss.

STP80NE06-10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

STP80NE06-10 FAQ

1.How can I place an order for STP80NE06-10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80NE06-10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80NE06-10 reliable?

The price and inventory of STP80NE06-10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80NE06-10 is usually 5 days.

3.What payment methods are accepted for STP80NE06-10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80NE06-10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80NE06-10?

STP80NE06-10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80NE06-10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80NE06-10?

For technical support, including STP80NE06-10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80NE06-10 requirements.

6.How does Aetrix verify that STP80NE06-10 is sourced from the original manufacturer or authorized distributors?

All STP80NE06-10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80NE06-10 meets industry standards.

7.What is the process for return or replacement of STP80NE06-10?

All STP80NE06-10 units undergo pre-shipment inspection (PSI). If there is an issue with STP80NE06-10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80NE06-10 part is unused and in its original packaging.

Return procedure for STP80NE06-10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…