STMicroelectronics STP80NF10FP
- Part No.:
- STP80NF10FP
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
STP80NF10FP.pdf
- Description:
- MOSFET N-CH 100V 38A TO220FP
- Quantity:
- Payment:

- Shipping:

Inventory:1,042
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Product details
Overview
STP80NF10FP from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220FP package, rated for 100 V VDS, 38 A continuous drain current at TC = 25°C, and 0.012 Ω typical RDS(on) at VGS = 10 V. It features low gate charge (Qg = 140 nC), 100% avalanche tested ruggedness, and exceptional dv/dt capability-designed as primary switch in high-efficiency isolated DC-DC converters for telecom and server power supplies.
For engineers reviewing the STP80NF10FP datasheet, STP80NF10FP pinout, STP80NF10FP application, or STP80NF10FP equivalent, key selection criteria include its 0.012 Ω on-resistance at 10 V gate drive, 152 A pulsed drain current capability, 350 mJ single-pulse avalanche energy rating, and TO-220FP package with insulated tab for simplified heatsinking in high-power switching designs.
Technical Context
This device employs ST's STripFET™ II process to minimize input capacitance (Ciss = 4300 pF) and gate charge, enabling fast switching with low drive loss. Its 9 V/ns peak diode recovery dv/dt rating and 155 ns reverse recovery time (trr) support robust operation in hard-switched inductive loads.
The MOSFET integrates a source-drain diode with 1.3 V forward voltage at 80 A and 11 A peak reverse recovery current (IRRM) under specified conditions. Thermal resistance junction-to-case is 3.33 °C/W, supporting high-power density layouts when mounted to heatsinks via the insulated tab.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - maximum blocking voltage in off-state; suitable for 48 V input bus systems with margin. |
| RDS(on) | 0.012 Ω (typ) at VGS = 10 V - enables <1.9 W conduction loss at 40 A DC. |
| Qg | 140 nC - low total gate charge reduces driver power and switching transition time. |
| EAS | 350 mJ - single-pulse avalanche energy rating confirms ruggedness in unclamped inductive turn-off. |
| dv/dt | 9 V/ns - high diode recovery dv/dt tolerance prevents spurious turn-on during commutation. |
| Tj max | 175 °C - extended junction temperature range supports high ambient industrial environments. |
| Rthj-case | 3.33 °C/W - enables 45 W dissipation at 25°C case temperature; requires mechanical mounting for thermal path. |
Pinout & Package
STP80NF10FP uses the TO-220FP package: insulated tab (non-conductive mounting surface), vertical lead frame, 3-terminal configuration with standard pin spacing. The plastic body provides creepage/clearance compliant with 2500 V DC insulation rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return node for channel current | Low-impedance connection to ground/reference; tied to PCB ground plane for EMI control. |
| 2 (Gate) | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD; routed away from noisy traces. |
| 3 (Drain) | Main power output terminal | Connected to high-side switching node; electrically isolated from heatsink by package insulation. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Reduces Ciss and Qg vs. prior generations-enables higher frequency operation without sacrificing RDS(on). |
| 100% avalanche tested | Guarantees minimum 350 mJ EAS per unit-eliminates need for external snubbers in flyback/LLC primary switches. |
| Insulated TO-220FP package | 2500 V DC isolation between drain and heatsink-allows direct mounting to shared chassis without insulating pads. |
| High dv/dt immunity | 9 V/ns rating ensures stable gate bias during fast voltage transients-critical for ZVS/ZCS resonant topologies. |
Applications
| Telecom DC-DC Converters | Server PSU Primary Switch |
|---|---|
Use Scenario: 48 V input to 12 V/54 A isolated forward converter in telecom shelf power system. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier replacement; operated in hard-switched PWM mode at 200–500 kHz. Use Value: 0.012 Ω RDS(on) cuts conduction loss by >30% vs. legacy 0.022 Ω devices, improving full-load efficiency by 0.8%. | Use Scenario: 380 V DC input to 12 V/200 A LLC resonant converter in 2U rack-mount server PSU. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; handles 80 A peak drain current with 152 A pulsed rating. Use Value: 140 nC Qg reduces gate driver losses and enables use of lower-cost 2 A drivers instead of 4 A alternatives. |
| Industrial Motor Drives | UPS Inverter Stage |
Use Scenario: 24–48 V DC bus driving 3-phase BLDC motor in HVAC blower module. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg; switched at 10–20 kHz with PWM modulation. Use Value: 175 °C max Tj and 3.33 °C/W Rthj-case allow sustained 38 A operation in sealed enclosures without forced air. | Use Scenario: 400 V DC bus in online double-conversion UPS delivering 3 kVA sine-wave output. IC Role / Device Role / Timing Role: Output stage switch in full-bridge inverter; subjected to repetitive unclamped inductive stress during transfer switching. Use Value: 350 mJ EAS and 9 V/ns dv/dt rating prevent failure during grid-synchronization transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPBF | RDS(on) = 0.044 Ω (typ), Qg = 71 nC, VDS = 100 V, TO-220 non-insulated | Lacks insulated tab and avalanche rating; lower voltage headroom in 48 V systems | Lower cost where heatsink isolation not required and avalanche stress is absent |
| IXTH80N10L2 | RDS(on) = 0.011 Ω (typ), Qg = 120 nC, VDS = 100 V, TO-247 insulated | Higher thermal performance (Rthj-case = 1.2 °C/W) but larger footprint and cost | Preferred for >100 W continuous dissipation where TO-220FP thermal limit is exceeded |
Compared with IRF540NPBF and IXTH80N10L2, STP80NF10FP uniquely balances low RDS(on), moderate Qg, TO-220FP insulation, and guaranteed avalanche ruggedness-making it optimal for space-constrained, medium-power telecom/server SMPS where reliability under transient stress is critical.
Availability
STP80NF10FP is available at Aetrix Electronics and suitable for telecom power supplies, server PSUs, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing of insulated high-current MOSFETs.
Supply support for STP80NF10FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete power devices, and MEMS sensors.
This part belongs to ST's STripFET™ II Power MOSFET product line-engineered specifically for high-efficiency, high-frequency switching in isolated DC-DC converters and industrial power conversion systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STP80NF10FP supports 27 A continuous drain current at TC = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limits of the TO-220FP package and must be applied when heatsink temperature exceeds 25°C. Designers should verify junction temperature using Rthj-case = 3.33 °C/W and actual power dissipation.
Is the TO-220FP package electrically insulated?
Yes-the TO-220FP package features an insulated metal tab rated for 2500 V DC withstand voltage between drain and mounting surface. This allows direct attachment to grounded heatsinks without additional insulating hardware, simplifying thermal design and reducing assembly cost in high-voltage applications.
Does STP80NF10FP have a built-in body diode?
Yes-it includes an integral source-drain diode with 38 A continuous and 152 A pulsed current rating, 1.3 V forward voltage at 80 A, and 155 ns reverse recovery time at 150°C junction temperature. This diode supports freewheeling and synchronous rectification roles but is not optimized for ultra-fast recovery.
Can STP80NF10FP replace STP75NF75 in existing designs?
No-STP75NF75 is a 75 V, 75 A device with different RDS(on) (0.0095 Ω), gate charge (160 nC), and safe operating area. STP80NF10FP has higher VDS (100 V) but lower ID (38 A) and distinct SOA curves. Direct substitution requires verification of voltage margin, current demand, and thermal performance in the target circuit.
STP80NF10FP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 189 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 45W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220FP
STP80NF10FP FAQ
1.How can I place an order for STP80NF10FP through Aetrix?
Please submit a Request for Quotation (RFQ) for STP80NF10FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STP80NF10FP reliable?
The price and inventory of STP80NF10FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80NF10FP is usually 5 days.
3.What payment methods are accepted for STP80NF10FP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80NF10FP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STP80NF10FP?
STP80NF10FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STP80NF10FP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STP80NF10FP?
For technical support, including STP80NF10FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80NF10FP requirements.
6.How does Aetrix verify that STP80NF10FP is sourced from the original manufacturer or authorized distributors?
All STP80NF10FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80NF10FP meets industry standards.
7.What is the process for return or replacement of STP80NF10FP?
All STP80NF10FP units undergo pre-shipment inspection (PSI). If there is an issue with STP80NF10FP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STP80NF10FP part is unused and in its original packaging.
Return procedure for STP80NF10FP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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