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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STP80NF55-06FP

Name: STP80NF55-06FP
Brand: STMicroelectronics
SKU: STP80NF55-06FP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STP80NF55-06FP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STP80NF55-06FP.pdf

Description:: MOSFET N-CH 55V 60A TO220FP

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Product details

Overview

STP80NF55-06FP from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-220FP package, rated for 55 V V_DS, 60 A continuous drain current at T_C = 25°C, and 0.0065 Ω R_DS(on) at V_GS = 10 V. It features ST's STripFET™ II process, 100% avalanche tested construction, and exceptional dv/dt capability - deployed in high-current DC-DC primary-side switching and motor drive half-bridge legs.

For engineers reviewing the STP80NF55-06FP datasheet, STP80NF55-06FP pinout, STP80NF55-06FP application, or STP80NF55-06FP equivalent, key selection criteria include R_DS(on) vs. thermal derating, safe operating area (SOA) limits under pulsed inductive loads, gate charge (Q_g = 142 nC) impact on driver sizing, and TO-220FP's isolated tab for simplified heatsinking in AC/DC power supplies.

Technical Context

This MOSFET employs a strip-based planar cell structure optimized for low on-resistance and rugged unclamped inductive switching. Its gate threshold voltage (V_GS(th) = 2–4 V) enables direct TTL/CMOS logic-level drive, while its 1.3 J single-pulse avalanche energy rating supports reliable operation during transient overvoltage events in flyback and forward converters.

The device exhibits strong temperature stability: R_DS(on) increases only ~1.7× from 25°C to 125°C, and transconductance (g_fs = 150 S typ.) remains linear across its operating range. Its 3.33 °C/W junction-to-case thermal resistance (TO-220FP) directly enables 45 W continuous dissipation with moderate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 48 V nominal bus systems with 15% margin.
R_DS(on)	0.0065 Ω max @ V_GS = 10 V - Delivers ≤ 23.4 W conduction loss at 60 A, enabling high-efficiency power stages.
I_D (cont)	60 A @ T_C = 25°C - Package-limited current rating; drops to 42 A at T_C = 100°C per derating curve.
Q_g	142 nC - Determines gate driver peak current requirement (e.g., ≥ 2.8 A for 50 ns turn-on with 5 V swing).
E_AS	1.3 J - Supports robust unclamped inductive switching up to 40 A, 45 V, without external snubbers.
dv/dt	7 V/ns - High immunity to false triggering during fast voltage transients in hard-switched topologies.
R_thJC	3.33 °C/W - Enables precise junction temperature estimation using case temperature measurement and thermal interface design.

Pinout & Package

STP80NF55-06FP uses the TO-220FP (Full-Pak) package: insulated plastic case with electrically isolated metal tab (pin 2), allowing direct mounting to heatsink without insulator kit. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V drive signal; requires <142 nC charge to fully enhance; sensitive to ESD (±20 V max rating).
2 (Drain / Tab)	High-side power node	Electrically isolated metal tab serves as primary drain connection and thermal path; must be mounted to heatsink with thermal paste.
3 (Source)	Power return / reference	Serves as local ground reference for gate drive; carries full load current (60 A); connects to PCB copper pour for low-inductance return path.

Key Features

Feature	Design Value
STripFET™ II process	Enables 0.0065 Ω R_DS(on) in TO-220FP by maximizing silicon utilization and minimizing cell pitch variation.
100% avalanche tested	Guarantees minimum 1.3 J single-pulse energy handling - eliminates need for system-level avalanche qualification testing.
Exceptional dv/dt immunity	7 V/ns rating prevents spurious turn-on during high-slew-rate switching transitions in PFC and LLC resonant converters.
ECOPACK® compliance	Lead-free second-level interconnect and RoHS-compliant finish meet industrial and consumer environmental requirements.
Application-oriented characterization	SOA curves, diode recovery data (t_rr = 100 ns, Q_rr = 0.32 µC), and thermal impedance plots provided for real-world design validation.

Applications

Server PSU Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: High-efficiency 80+ Titanium server power supply operating at 48 V input, 12 V output with synchronous rectification.

IC Role / Device Role / Timing Role: Primary-side switching transistor in active-clamp forward topology, switching at 200–300 kHz.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 8 mΩ MOSFETs; TO-220FP isolation simplifies heatsink integration in dense 1U chassis.

Use Scenario: 3 kW brushless DC motor controller for CNC spindle drives with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, commutated at ≤20 kHz with PWM dead-time control.

Use Value: 60 A continuous rating supports peak torque bursts; 1.3 J avalanche rating absorbs regenerative energy spikes without clamping diodes.

Telecom DC-DC Brick

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 48 V input, 12 V/50 A isolated DC-DC converter module for telecom base station equipment.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge topology, operating with ZVS at 100–150 kHz.

Use Value: 7 V/ns dv/dt immunity ensures stable operation during zero-voltage switching transitions; 142 nC Q_g allows efficient gate driving with integrated SiC drivers.

Use Scenario: 6.6 kW single-phase OBC with boost-type PFC stage feeding a DC-link capacitor bank.

IC Role / Device Role / Timing Role: Boost switch handling 30 A RMS current at 65 kHz, subject to line-voltage surges and inrush transients.

Use Value: 55 V rating provides 20% margin above 480 V peak line; 100% avalanche test ensures reliability during grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668PbF	R_DS(on) = 0.0042 Ω @ 10 V, but higher Q_g = 210 nC and no avalanche rating specified.	Better conduction loss at low current, but less robust under inductive switching stress.	Prefer when thermal budget dominates and SOA margins are verified externally.
IXFH80N50P3	50 V rating, R_DS(on) = 0.0055 Ω, Q_g = 135 nC, avalanche-rated (E_AS = 1.1 J).	Limited to 400 V max line applications; slightly lower SOA margin than STP80NF55-06FP.	Choose for cost-sensitive 400 V systems where 55 V headroom is unnecessary.

Compared with IRFP4668PbF and IXFH80N50P3, STP80NF55-06FP uniquely balances 55 V rating, 1.3 J avalanche energy, and 142 nC gate charge - making it optimal for 48 V–400 V industrial power stages requiring both efficiency and ruggedness without external protection.

Availability

STP80NF55-06FP is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom DC-DC bricks, and EV on-board charger PFC stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for STP80NF55-06FP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-current, high-reliability switching in industrial power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for STP80NF55-06FP at 100°C case temperature?

The maximum continuous drain current is 42 A at T_C = 100°C, as specified in Table 1 of the datasheet. This reflects thermal derating from the 60 A rating at 25°C, governed by the device's 3.33 °C/W R_thJC and safe operating area constraints under sustained conduction.

Does STP80NF55-06FP require a gate resistor for standard 12 V PWM drive?

Yes - a gate resistor (typically 4.7–10 Ω) is required to control dV/dt and prevent oscillation. With Q_g = 142 nC and typical driver output impedance, a 4.7 Ω resistor limits peak gate current to ~2.5 A and achieves ~100 ns turn-on delay, aligning with recommended switching times in Figure 15.

Can STP80NF55-06FP be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Its positive R_DS(on) temperature coefficient (R_DS(on) rises with junction temperature) enables inherent current sharing. However, layout asymmetry or unequal gate loop inductance can cause imbalance - use Kelvin-source connections and matched gate resistors per device.

Is the TO-220FP package electrically isolated, and what is its insulation voltage rating?

Yes - the TO-220FP package features an electrically isolated metal tab rated for 2500 V DC insulation withstand voltage (V_ISO). This allows direct mounting to grounded heatsinks without thermal pads or insulators, reducing thermal resistance and assembly complexity in high-voltage power stages.

STP80NF55-06FP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 189 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STP80NF55-06FP FAQ

1.How can I place an order for STP80NF55-06FP through Aetrix?

Please submit a Request for Quotation (RFQ) for STP80NF55-06FP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STP80NF55-06FP reliable?

The price and inventory of STP80NF55-06FP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STP80NF55-06FP is usually 5 days.

3.What payment methods are accepted for STP80NF55-06FP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STP80NF55-06FP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STP80NF55-06FP?

STP80NF55-06FP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STP80NF55-06FP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STP80NF55-06FP?

For technical support, including STP80NF55-06FP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STP80NF55-06FP requirements.

6.How does Aetrix verify that STP80NF55-06FP is sourced from the original manufacturer or authorized distributors?

All STP80NF55-06FP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STP80NF55-06FP meets industry standards.

7.What is the process for return or replacement of STP80NF55-06FP?

All STP80NF55-06FP units undergo pre-shipment inspection (PSI). If there is an issue with STP80NF55-06FP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STP80NF55-06FP part is unused and in its original packaging.

Return procedure for STP80NF55-06FP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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